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    MGFC45V6472A Search Results

    MGFC45V6472A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MGFC45V6472A Mitsubishi 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET Original PDF
    MGFC45V6472A Mitsubishi 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET Original PDF

    MGFC45V6472A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC45V6472A MGFC45V6472A -45dBc

    IM324

    Abstract: high power FET transistor s-parameters MGFC45V6472A
    Text: 27-March&#39;98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched


    Original
    PDF 27-March MGFC45V6472A MGFC45V6472A 25deg IM324 high power FET transistor s-parameters

    MGFC45V6472A

    Abstract: GF-38
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC45V6472A MGFC45V6472A -45dBc 120mA 10MHz GF-38

    MGFC45V6472A

    Abstract: No abstract text available
    Text: 27-March&#39;98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> Notice: This is not a final specification. Some parametric limits are subject to change. MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC45V6472A is an internally impedance-matched


    Original
    PDF 27-March MGFC45V6472A MGFC45V6472A 2GHz70 25deg

    MGFC45V6472A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC45V6472A MGFC45V6472A -45dBc June/2004

    Untitled

    Abstract: No abstract text available
    Text: < C band internally matched power GaAs FET > MGFC45V6472A 6.4 – 7.2 GHz BAND / 32W DESCRIPTION unit : m m OUTLINE The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4 – 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original
    PDF MGFC45V6472A MGFC45V6472A -45dBc

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V6472A 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC45V6472A is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers.The hermetically sealed metal-ceramic


    Original
    PDF MGFC45V6472A MGFC45V6472A -45dBc 25deg June/2004

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original
    PDF M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776

    Untitled

    Abstract: No abstract text available
    Text: 27-March&#39;98 PRELIMINARY MITSUBISHI SEMICONDUCTOR <GaAs FET> N o tic e : T his is n o t a fin a l s p e c ific a tio n . S o m e p a ra m e tric lim its are s u b je c t to c h a n g e MGFC45V6472A 6.4-7.2GHZ BAND 32W INTERNALLY MATCHED GaAs FET DESCRIPTION


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    PDF 27-March MGFC45V6472A GFC45V6472A