MG75J Search Results

Contextual Info: T O SH IB A MG75J1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 J 1 BS1 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • High Input Impedance • H ighSpeed • Low Saturation Voltage : VQE sat = 2.7V (Max.) (Iq = 75A)

MG75J1ZS50

Abstract: ZS50 MG75J1Z 4A05 diode
Contextual Info: TOSHIBA MG75J1ZS50 MG75J1 ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG75J6ES50

Contextual Info: TOSHIBA MG75J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J6ES50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode.

MG75J2YS50

Abstract: Toshiba transistor Ic 100A diode bridge toshiba toshiba mg75j2ys50
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: tf = 0.30µs Max. (IC = 75A) trr = 0.15µs (Max.) (IF = 75A)

Contextual Info: MG75J1ZS40 TOSHIBA TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Mr;7SM7<;An • v ■ 'w m wmr v ■ v ■ w Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf=0.35^/s Max. trr = 0.15^8 (Max.)

MG75J6ES1

Contextual Info: MG75J6ES1 GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . 6 IGBTs are Built Into 1 Package. . Enhancement-Mode . Low Saturation Voltage : VCE sat =4-0V(Max.) . High Speed : tf=0. 35iis(Max.) t r r = 0 .25(JS (Max.)

Contextual Info: TO SH IBA MG75J1ZS50 MG75J1 ZS50 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT H IG H P O W E R SW IT C H IN G APPLICATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One

mg75j2ys91

Abstract: MG75J2YS9 99108 mg75j2ys91-2 SO1A mg75j2ys91-4
Contextual Info: TOSHIBA SEMICONDUCTOR TOSHIBA C'l’R MODULE MG75J2YS91 TECHNICAL DATA SILICON N CHANNEL TGBT HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . High Input Impedance . Ii igh Speecl : if' I .0/is M a x . trr=0.2 5u s (Ma x .) . Low Saturation Voltage

MG75J1ZS40

Abstract: ZS40
Contextual Info: TOSHIBA MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35,«s Max. trr = 0.15/^ (Max.) Low Saturation Voltage

Contextual Info: T O S H IB A MG75J1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J1 ZS50 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete H alf Bridge in One

MG75J1ZS50

Contextual Info: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

MG75J2YS50

Contextual Info: MG75J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance. Includes a complete half bridge in one package. Enhancement-mode.

diode 083

Abstract: MG75J1ZS40
Contextual Info: MG75J1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS40 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.35µs Max trr = 0.15µs (Max) Low saturation voltage : VCE (sat) = 3.5V (Max) Enhancement-mode

Contextual Info: T O SH IB A MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35/«s Max. trr = 0.15/^s (Max.) Low Saturation Voltage

LOTA

Abstract: MG75J1BS11 tcp 8005 2-33F1A
Contextual Info: MG75J1BS11 TOSHIBA M G 7 5 J 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • HighSpeed : tf= 1.0/^s Max. (I0 = 75A) • Low Saturation Voltage : VCE(sat)= 2.7V (Max.) (I0 = 75A)

Contextual Info: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode

toshiba mg75j2ys50

Abstract: MG75J2YS50
Contextual Info: TOSHIBA MG75J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. U n it in mm MOTOR CONTROL APPLICATIONS. 4 -F A S T -O N -T A B #110 The Electrodes are Isolated from Case. H igh In p u t Impedance, Includes a Complete H a lf Bridge in One

MG75J1BS11

Abstract: TOSHIBA IGBT DATA BOOK TOSHIBA IGBT
Contextual Info: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG75J1ZS50

Contextual Info: MG75J1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75J1ZS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode

Contextual Info: T O SH IB A MG75J2YS50 MG 7 5 J 2 YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One

Diode SY 356

Abstract: diode sg 5 ts mg75j6es5
Contextual Info: TOSHIBA MG75J6ES50 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT MG75J6ES HIGH PO W E R SWITCHING APPLICATIONS. U n it in m m I-0 5 .5 ÍO .3 M OTOR CONTROL APPLICATIONS. • T h e E lectrod es are Iso lated from C ase. • H igh In p u t Im pedance. • 6 IG B T s B u ilt Into 1 P ack ag e.

Contextual Info: MG75J2YS50 HIGH P O W E R SW ITC H IN G APPLICA TIO N S. M O T O R C O N T R O L APPLICA TIO N S. • • • • • • The Electrodes are Isolated from Case. H igh In p ut Im pedance. Includes a Com plete H alf Bridge in One Package. Enhancem ent-M ode.

Contextual Info: T O S H IB A MG75J1ZS50 MG75J1 ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • 2-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

Contextual Info: MG75J1ZS40 TO SHIBA M G 7 5 J 1 ZS 4 0 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH PO W ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • U nit in mm 2 -F A S T -O N -T A B #110 • High Input Impedance High Speed : tf=0.35/<s Max.