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    MG400Q1US65H Search Results

    MG400Q1US65H Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG400Q1US65H Toshiba TRANS IGBT MODULE N-CH 1200V 400A 4(2-109F1A) Original PDF
    MG400Q1US65H Toshiba Silicon N Channel IGBT Original PDF

    MG400Q1US65H Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MG400Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA


    Original
    PDF MG400Q1US65H 2-109F1A

    Untitled

    Abstract: No abstract text available
    Text: MG400Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications • High input impedance · Enhancement-mode · The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA


    Original
    PDF MG400Q1US65H 2-109F1A

    Untitled

    Abstract: No abstract text available
    Text: MG400Q1US65H TOSHIBA GTR Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA


    Original
    PDF MG400Q1US65H 2-109F1A

    MG400Q1US65H

    Abstract: No abstract text available
    Text: MG400Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications Unit: mm • Enhancement-mode • The electrodes are isolated from case. E G E C 24 0.3 20 0.3 29 0.3 JAPAN 80 0.8 93 0.3 Equivalent Circuit


    Original
    PDF MG400Q1US65H 2-109F1A MG400Q1US65H

    Untitled

    Abstract: No abstract text available
    Text: MG400Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA


    Original
    PDF MG400Q1US65H 2-109F1A

    MG400Q1US65H

    Abstract: No abstract text available
    Text: MG400Q1US65H TOSHIBA IGBT Module Silicon N Channel IGBT MG400Q1US65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E C E G B JEDEC ― JEITA


    Original
    PDF MG400Q1US65H 2-109F1A MG400Q1US65H

    TC58DVG14B1FT00

    Abstract: TH58DVG24B1FT00 Ethernet-MAC ic TH58DVG TMP86P203P 721A SOP8 721A TMP86P202P 20-DIP pwm igbt
    Text: ご注意 本資料に掲載されております製品※の一部に2004 年 10 月 1 日付けで三菱 電機株式会社へ譲渡された製品があります。詳しくは弊社営業窓口までお問 い合わせ下さい。 ※対象製品:大容量モジュール事業 自動車用途、高耐圧製品を除く


    Original
    PDF 03-3457-3405FAX. TMPR4938XBG-300 133MHz TC58DVG14B1FT00 TH58DVG24B1FT00 48TSOP TC58DVG14B1FT00 TH58DVG24B1FT00 Ethernet-MAC ic TH58DVG TMP86P203P 721A SOP8 721A TMP86P202P 20-DIP pwm igbt