MG25Q Search Results

Contextual Info: TO SHIBA TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE MG25Q SILICON N CHANNEL IGBT ES50A Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. Inductive Load Low Saturation Voltage

MG25Q1BS11

Contextual Info: MG25Q1BS11 TOSHIBA MG25Q1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O^s Max. Low Saturation Voltage : V£E(sat) = 2.7V (Max.) Enhancement-Mode

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS91 GTR Module Unit in mm Silicon N Channel IGBT «-FA ST-O N -TA B ♦100 High Power Switching Applications Motor Control Applications F e a tu re s • High input im pedance • High speed: tf = 1 .0|is Max.

Contextual Info: T O SH IB A MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage

Contextual Info: T O SH IB A MG25Q6ES51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG25Q6ES42

Contextual Info: TOSHIBA MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The Electrodes are Isolated from Case. • 6 IGBTs are Built Into 1 Package. • Enhancement-Mode • Low Saturation Voltage

Contextual Info: T O SH IB A TENTATIVE MG25Q6ES50A TOSHIBA GTR MODULE m . a^ ^7 ^r HIGH POWER SWITCHING APPLICATIONS nX SILICON N CHANNEL IGBT ES 50A MOTOR CONTROL APPLICATIONS • • • • • t High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage

Contextual Info: T O SH IB A MG25Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES51A HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • The Electrodes are Isolated from Case. • High Input Impedance. • 6 IGBTs B uilt Into 1 Package. EQUIVALENT CIRCUIT

Contextual Info: T O SH IB A MG25Q6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

MG25Q1BS11

Contextual Info: MG25Q1BS11 TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

mg25q6es42

Abstract: SO120200
Contextual Info: TOSHIBA MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage

Contextual Info: TOSHIBA MG25Q1BS11 TO SH IBA GTR M O DULE SILICON N C HANNEL IGBT MG25Q1BS11 U n it in HIGH P O W E R SWITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. H ig h In p u t Impedance H ig h S p e e d : tf= 1 .0 /iS Irii*iri M ax. T i Lo w Satu ratio n V oltage : V C E ( sat) = 2.7V (M ax.)

Contextual Info: T O S H IB A MG25Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode

Contextual Info: T O SH IB A MG25Q6ES50A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M fi^ n fiF ^ R n A • Mr lap ta «v v m ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package.

MG25Q2YS40

Abstract: igbt 25A toshiba diode bridge toshiba Toshiba bridge diode TOSHIBA IGBT toshiba power module
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q2YS40 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 0.5µs Max. trr = 0.5µs (Max.)

Contextual Info: T O SH IB A MG25Q6ES42 TOSHIBA GTR MODULE M fn ? ^ n SILICON N CHANNEL IGBT f iF c ;z i? Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode

MG25Q6ES51A

Abstract: toshiba Igbts MG25Q6ES51
Contextual Info: TOSHIBA MG25Q6ES51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 5 Q 6 ES51 A Unit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. EQUIVALENT CIRCUIT

mg25q6es42

Contextual Info: MG25Q6ES42 U n it in m m HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 92.7J-Q.6 • T he E lectrodes a re Isolated from Case. • 6 IGUTs a re B u ilt Into 1 P ackage. • E nhancem ent-M ode • Low S a tu ra tio n V oltage : v C E sa t = 4 0V (M ax.)

igbt 25A toshiba

Abstract: MG25Q6ES42 Toshiba transistor Ic 100A
Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG25Q6ES42 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: tf = 0.5µs Max. trr = 0.5µs (Max.)

Contextual Info: MG25Q1BS11 T O SH IB A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT r<:i 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/iS Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode

Contextual Info: MG25Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. • • • High Input Impedance High Speed tf= 0.5/iS Max. trr = 0.5//s (Max.) Low Saturation Voltage : ^CE(sat) = 4.0V (Max.) • Enhancement-Mode • Includes a Complete Half Bridge in One

toshiba tcp 1805

Abstract: MG25Q2YS40 IF-25A diode 4a05
Contextual Info: TOSHIBA MG25Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.) Low Saturation Voltage : VCE(sat) = 4.0V (Max.)

Contextual Info: TOSHIBA MG25Q6ES50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG25Q6ES50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf = 0 .3 ^ 3 Max. Inductive Load • Low Saturation Voltage ; V CE (sat) = 3-OV (Max.)

Contextual Info: MG25Q1BS11 T O SH IB A M G 2 5 Q 1 BS1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)