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    MF ELECTRONICS T1312 Search Results

    MF ELECTRONICS T1312 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    MF ELECTRONICS T1312 Datasheets Context Search

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    T3312

    Abstract: MF Electronics T1312 T1310 T3310 T1312 MF Electronics T3312 transistor smd code marking 420
    Text: SURFACE MOUNT T1310, T1312, T3310, T3312 FIXED/ TRISTATE OSCILLATORS Industrial Temperature Low Jitter -40 to +85ºC Surface Mount, 3.3 V 20 KHz to 100 MHz Guaranteed Jitter is less than 5 ps RMS from positive peak to positive peak. No multipliers are used.


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    PDF T1310, T1312, T3310, T3312 NY10801 T3312 MF Electronics T1312 T1310 T3310 T1312 MF Electronics T3312 transistor smd code marking 420

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


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