MEMS RF SWITCH CAPACITORS Search Results

DKM812-3

Abstract: Dow-Key Microwave TT-612 TT612-3 jedec package MO-220 16 pin tt612 jedec footprint MO-220 VNND-2
Contextual Info: PRELIMINARY SPDT MEMS DKM812-3 SWITCH DESCRIPTION The DKM 812 is a Single Pole Double-Throw SPDT Reflective RF switch that utilizes breakthrough MEMS technology to provide extremely low insertion loss, high linearity, and high isolation in a compact hermetic chip-scale package.

rf mems switch spst

Abstract: SKY13317-373 Hittite RF Switch SOI military switch EDN handbook rf3024 SKY13317-373LF RF3023 RF3025 2SMES-01
Contextual Info: R F switching options: The right fit might come with a loss Manufacturers are offering SOI and MEMS alternatives to PIN-diode, GaAs, and electromechanical switches for a variety of RF applications, but you need to understand RF-switch specs before you commit to a new technology.

Contextual Info: All rights reserved 2013 OMMIC Fabrication de MMIC Intégrant des MEMS RF Brice GRANDCHAMP b.grandchamp@ommic.com RF MEMS workshop, Microwave & RF salon, Paris, April 2013 Plan OMMIC technologies Development of MEMS at OMMIC All rights reserved © 2013 OMMIC

rf mems switch

Abstract: M1C06-CDK2 MEMS Filter spdt toggle switch application MEMS
Contextual Info: White Paper MEMS-based Amplified Switch Filter Bank Model 310-020022-001 For more than 15 years, Spectrum Microwave of Delmar, DE has developed PIN diode and MMIC based switched filter banks. Recent advancements have made micro-electromechanical systems

Contextual Info: The State of RF/microwave Switch Devices Pat Hindle, Microwave Journal Editor RF and microwave switches are used extensively in wireless systems for signal routing finding wide use in switching signals from antennas to the transmit and receive chains. They are one of

stacked transistor shunt switch

Abstract: stacked transistors SOI RF Peregrine 2000 stacked diplexer and duplexer for GSM and DCS ultra high frequency FETs or transistors SOI series shunt stacked FETs soi stacked FETs circulator s band switching circulator
Contextual Info: 18| www.wirelessdesignmag.com COVER STORY| Integrating UltraCMOS Designs in GSM Front Ends G L O S S A RY O F A C R O N Y M S ASM - Antenna switch module BVDSS - Breakdown voltage drain-to-source, gate shorted CDMA - Code-division multiple access CMOS - Complimentary metal oxide semiconductor

Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity

Abstract: varactor
Contextual Info: Low Distortion Tunable RF Components, a Compound Semiconductor Opportunity Cong Huang1, Koen Buisman1, Peter J. Zampardi2, Lis K. Nanver1, Lawrence E. Larson3 and Leo C. N. de Vreede1 1 Delft Institute of Microsystems and Nanoelectronics DIMES , Delft University of Technology,

ASTX-11

Abstract: ABS06
Contextual Info: ABRAC O N P RO DUC T CATAL O G September 2013 Crystals Real-Time Clocks Oscillators Filters Precision Timing RF & Microwave Magnetics & Capacitors Engineered Solutions Oscillators ASG 7.0 x 5.0 x 2.0mm Precision Timing Solutions ABLNO 9.2 x 14.8 x 5.5 mm SMT

National Relay

Contextual Info: MEMS-Based Magnetic Reed Switch Technology A White Paper by Coto Technology on Emerging Reed Switch Technologies ™ Table of Contents Page Abstract. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits

Abstract: varactor high power varactor
Contextual Info: IEEE BCTM 12.1 Design Concepts for Semiconductor based Ultra-Linear Varactor Circuits Invited C. Huang1, K. Buisman1, L. K. Nanver1, P. J. Zampardi2, L. E. Larson3, and L. C. N. de Vreede1 1 Delft University of Technology, Delft, 2628 CD, the Netherlands

Contextual Info: RF1255 ANTENNA SWITCH MODULE WITH DUAL ANTENNA PATHS Package Style: 26-pin, 2.8mm x 3.6mm x 1.0mm RF1255 GSM 850/900 TRx1 TRx2 TRx3 GSM 1800/1900 TRx4 Features       Excellent Insertion Loss and Isolation Performance Seven Linear Paths Offer

LTE antenna switch

Abstract: RF1255 gsm module micro lte antenna phemt gan
Contextual Info: RF1255 ANTENNA SWITCH MODULE WITH DUAL ANTENNA PATHS Package Style: 26-pin, 2.8mm x 3.6mm x 1.0mm RF1255 GSM 850/900 TRx1 TRx2 TRx3 GSM 1800/1900 TRx4 Features       Excellent Insertion Loss and Isolation Performance Seven Linear Paths Offer

LT8415IDDB

Abstract: LT841 Schottky bridge LT8415 schottky diode high voltage
Contextual Info: News Release ⎜ www.linear.com Ultralow Power Boost Converter with Dual Half-Bridge Switches MILPITAS, CA – May 21, 2009 – Linear Technology announces the LT8415, a low noise micropower boost converter with integrated dual half-bridge switches. The LT8415’s unique

LTE antenna design

Abstract: LTE rf front end power amplifier transceiver 4G LTE rffe LTE RF Multiband Ericsson Base Station 700mhz SP10T Peregrine Ericsson microwave antenna Ericsson 3G or LTE Module LTE impedance tuner
Contextual Info: RF & Microwave Designline October 2010 RF front end adapts for increased mobile data demand Tero Ranta, Duncan Pilgrim & Richard Whatley, Peregrine Semiconductor The industry is predicting that data volumes could reach 2.7 exabytes per year1 in 2010 and that

RF9500

Abstract: RF1193 RF1128 RF3189 RF9501 DCS1800 EGSM900 PCS1900 RF112 rf power 88-108mhz
Contextual Info: RF9500 RF9500UMTS RX Tri-Band LNA/Filter/Switch Module UMTS RX TRI-BAND LNA/FILTER/SWITCH MODULE Package: Module, 28-Pin, 6.8mmx5mm x1.0mm RF9500      HB_OUT+ Tri-Band Support, Bands I, II, and V HB_OUT- Lowest BOM Cost and Small Solution - No External DC-Blocking Capacitors

RF3023

Contextual Info: RF3023 Preliminary BROADBAND MEDIUM POWER SPDT SWITCH Package Style: SC70, 6-pin Features „ „ „ „ „ „ 10 MHz to 3 GHz Operation 0.25 dB Insertion Loss at 1 GHz 27 dB Isolation at 2 GHz 2.5 V Mimimum Control Voltage 30 dBm P0.1 dB at 3 V 50 dBm IP3 at 3 V

Contextual Info: RF1291 SWITCH FILTER MODULE WITH EIGHT LINEAR 3G/4G PATHS Package Style: 20-pin, 3.2 mm x 3.2 mm x 1.0 mm RF1291 TRX1 / GSM Rx TRX2 / GSM Rx TRX3 / GSM Rx Features           TRX4 / GSM Rx Excellent Insertion Loss and Isolation Performance

rf3024

Contextual Info: RF3024 Preliminary BROADBAND MEDIUM POWER SPDT SWITCH Package Style: SC70, 6-pin Features „ „ „ „ „ „ 10 MHz to 3 GHz Operation 0.25 dB Insertion Loss at 1 GHz 27 dB Isolation at 2 GHz 2.5 V Minimum Control Voltage 30 dBm P0.1 dB at 3 V 50 dBm IP3 at 3 V

RF3023

Abstract: RF3023TR7
Contextual Info: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control

2 GHz BJT

Abstract: rfmd sc70-6 branding RFC MICRO DS101111 RF3023
Contextual Info: RF3023 RF3023 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3023 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3023 is ideally suited for battery-powered and low control

rf3024

Abstract: STATES10 RF-302
Contextual Info: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control

A114 es

Contextual Info: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH Package: 3 mm x 3 mm QFN Product Description Features The FMS2014-001 is a low loss, high power, linear single-pole double-throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die

RF1603

Abstract: phemt gan
Contextual Info: RF1603 BROADBAND SP3T SWITCH Package Style: QFN, 12-pin, 2.5mmx2.5mm Features        RF1603 2KV HBM Rating On All Ports Low Frequency to 2.5GHz Operation Low Insertion Loss: 0.45dB at 1GHz Very High Isolation: 40dB at 1GHz Compatible With Low Voltage

Contextual Info: RF3025 RF3025SPDT, High Isolation, Single Control, Absorptive Switch SPDT, HIGH ISOLATION, SINGLE CONTROL, ABSORPTIVE SWITCH Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The RF3025 is a high isolation single-pole double-throw SPDT absorptive