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    MEMORY IC Search Results

    MEMORY IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2964B/BUA Rochester Electronics LLC 2964B - Dynamic Memory Controller Visit Rochester Electronics LLC Buy
    MHM411-21 Murata Manufacturing Co Ltd Ionizer Module, 100-120VAC-input, Negative Ion Visit Murata Manufacturing Co Ltd
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    D1U74T-W-1600-12-HB4AC Murata Manufacturing Co Ltd AC/DC 1600W, Titanium Efficiency, 74 MM , 12V, 12VSB, Inlet C20, Airflow Back to Front, RoHs Visit Murata Manufacturing Co Ltd
    SCC433T-K03-004 Murata Manufacturing Co Ltd 2-Axis Gyro, 3-axis Accelerometer combination sensor Visit Murata Manufacturing Co Ltd
    SF Impression Pixel

    MEMORY IC Price and Stock

    ADLINK Technology Inc Micro SD Memory Card 32GB TS32GUSD420T

    Memory Cards microSD, SDXC/SDHC, 32GB, UHS-I U1/V10/A1, 100R/70W, 2.7-3.6V, Endurance:80 TB, 3D TLC, 11x15x0.8mm, OP Temp:-25-85, with plastic case
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Micro SD Memory Card 32GB TS32GUSD420T
    • 1 $61.11
    • 10 $59.22
    • 100 $56.09
    • 1000 $56.09
    • 10000 $56.09
    		Get Quote

    ADLINK Technology Inc Micro SD Memory Card 32GB

    Memory Cards microSD, SDXC/SDHC, 32GB, C10/UHS-I U1, 100R/70W, 2.7-3.6V, Endurance:3K P/E, MLC, 11x15x1mm, OP Temp:-25-85
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Micro SD Memory Card 32GB
    • 1 $75.72
    • 10 $73.38
    • 100 $69.51
    • 1000 $69.51
    • 10000 $69.51
    		Get Quote

    MEMORY IC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM's non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash


    OCR Scan     		16kbit BR24CF16F BR24CF16F PDF

    Flash Memory

    Abstract: sram 128m 1m x 16 memory module mask rom SRAM
    Text: IC Memory CD-ROM X13769XJ2V0CD00 DRAM Flash memory DRAM Module MCP Flash memory + SRAM SRAM COMBO Memory Mask ROM Line Buffer Product name Application Road map Product category Main menu IC Memory Direct RambusTM DRAM Synchronous DRAM (Single Data Rate)


    Original     		X13769XJ2V0CD00 Flash Memory sram 128m 1m x 16 memory module mask rom SRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: Memory IC 16kbit serial ferroelectric memory BR24CF16F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash


    OCR Scan     		16kbit BR24CF16F BR24CF16F PDF

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		010/J/T KM68512 12BKX8 km6865b PDF

    BR24CF16F

    Abstract: sis00
    Text: Memory IC 16kbit serial ferroelectric memory BR24 CF 16 F The BR24CF16F is a non-volatile ferroelectric memory developed for use in ROHM’s non-volatile memory technolo­ gy and ferroelectric technology. Using a ferroelectric memory enables faster writing speeds than EEPROM and flash


    OCR Scan     		16kbit BR24CF16F BR24CF16F sis00 PDF

    SLE 4403

    Abstract: 4406S afnor SLE 4463 M2.2 SLE 77 4418 66 4402 sle 4463 sms ic MEMORY MODULES
    Text: Security Packaging Center Content Contact based Modules Memory Modules SMS SEC PC M Rev. 5.0/2003 Page 1/7 Memory Modules Security Packaging Center Information about our Memory Modules Memory Modules Our modules for memory ICs With over 1.5 billion modules produced the M2.2 & M3.2 are two of the most


    Original     		22C05S 4406S/SE 5533S/36S SLE 4403 4406S afnor SLE 4463 M2.2 SLE 77 4418 66 4402 sle 4463 sms ic MEMORY MODULES PDF

    java card

    Abstract: ISO-7816-3 crc CRC16 EMTCG128-3G FIPS140-2 ISO3309 ISO-3309
    Text: EM MICROELECTRONIC - MARIN SA Theseus TM Cipher Gold 128-3G EMTCG128-3G 128KB Flash Smart Card IC + Cryptography Engine Memory Control ‰ Memory Management Unit MMU ‰ Code / Data flexible memory partitioning thanks to GPNVM512 General Purpose NV Memory


    Original     		128-3G EMTCG128-3G 128KB GPNVM512 30MHz, 80X51 java card ISO-7816-3 crc CRC16 EMTCG128-3G FIPS140-2 ISO3309 ISO-3309 PDF

    CRC16

    Abstract: EMTCG176-3G FIPS140-2 ISO3309 ISO-7816-3 crc
    Text: EM MICROELECTRONIC - MARIN SA Theseus TM Cipher Gold 176-3G EMTCG176-3G 176KB Flash Smart Card IC + Cryptography Engine Memory Control ‰ Memory Management Unit MMU ‰ Code / Data flexible memory partitioning thanks to GPNVM512 General Purpose NV Memory


    Original     		176-3G EMTCG176-3G 176KB GPNVM512 30MHz, 80X51 CRC16 EMTCG176-3G FIPS140-2 ISO3309 ISO-7816-3 crc PDF

    BR93CS46F

    Abstract: No abstract text available
    Text: Monolithic ICs / -\ IC Memory • Memory IC s .8 ■ ICs for OA A pplications. 17 • Memory 1C L in e u p .8


    OCR Scan     		BR93CS46F BA4558F PDF

    8U406

    Abstract: T0252 ba05sfp BA05FP BU2879 32segx4com ba1032 BU9716AK bu9716 BA312
    Text: Memory/Standard tCs Table of Memory/Standard ICs Table of Memory / Standard ICs Ferroelectric memory Operating voltage range Capacity oils 16k Bit configurato Power supply Product No. (word X bit} BR24CF16F voltage (V) 2,048 X 8 5 Read (V) Write (V) 4.5 -5 .5


    OCR Scan     		BR24CF16F voltai99 T0252-5) T0220FP-5-5V T0220FP-5 T0252-5 BA05ST BA05SFP. 8U406 T0252 ba05sfp BA05FP BU2879 32segx4com ba1032 BU9716AK bu9716 BA312 PDF

    CO2V

    Abstract: No abstract text available
    Text: MEMORY !Cs FLASH MEMORY A list of Errata for 1996 Flash Memory Databook February 1996 SAMSF002 * co > 2 V NVM Product Planning Team M emory Business Sam sung Electronics Co. 82-2-760-6067 ELfCTRONICS FLASH MEMORY MEMORY ICs T he fo llow ing tables replaced co rre sp o n ding ones In the 1996 Flash M em ory D atabook


    OCR Scan     		SAMSF002 KM29N040T KM29V040T A18/19 528-byte 250us 32000T/R 32000T/R CO2V PDF

    rfid reader 915MHZ

    Abstract: RFID specifications
    Text: WM72016-6 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016-6 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs


    Original     		WM72016-6 16Kbit WM72016-6 545-FRAM, rfid reader 915MHZ RFID specifications PDF

    KM6264BL-10

    Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent


    OCR Scan     		KMM591000C-6 KMM591000C-7 KMM591000C-8 KMM536256C/CG-7 KMM536256C/CG-8 New80 KM75C03AP-50 KM75C03AN-12 KM75C03AN-15 KM75C03AN-20 KM6264BL-10 samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80 PDF

    WM720166

    Abstract: rfid reader 915MHZ
    Text: WM72016-6 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016-6 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs


    Original     		WM72016-6 16Kbit WM72016-6 545-FRAM, WM720166 rfid reader 915MHZ PDF

    hitachi eprom

    Abstract: hitachi ic
    Text: Contents Refer to Hitachi IC Memory Data Book No. 1 regarding SRAM, PSRAM and Hitachi IC Memory Data Book No. 3 regarding Flash Memory, Flash Card, EEPROM, EPROM, OTPROM and Mask ROM and Hitachi IC Memory Data Book No. 4 regarding DRAM Module and Synchronous DRAM Module.


    OCR Scan     		PDF

    WM720166

    Abstract: rfid reader 915MHZ
    Text: WM72016-6 16Kbit Secure F-RAM Memory with Gen-2 RFID Access & Serial Port Direct Memory Access DESCRIPTION FEATURES The WM72016-6 is a RFID transponder IC with nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory, or F-RAM, is nonvolatile and performs


    Original     		WM72016-6 16Kbit WM72016-6 WM720166 rfid reader 915MHZ PDF

    intel nand flash

    Abstract: intel nand slc Nand intel NAND Qualification Reliability NAND read disturb laptop HARD DISK CIRCUIT diagram laptop battery mtbf "NAND Flash" intel NAND Flash Memory NAND Flash Qualification Reliability
    Text: White Paper Intel Flash Memory Intel® NAND Flash Memory for Intel® Turbo Memory Intel® NAND Flash Memory for Intel® Turbo Memory White Paper Introduction Overview Intel has introduced a new non-volatile memory NVM layer into the memory hierarchy in the mobile computing platform. This new NVM


    Original     		0507/DS/PD/PDF 316093-001US intel nand flash intel nand slc Nand intel NAND Qualification Reliability NAND read disturb laptop HARD DISK CIRCUIT diagram laptop battery mtbf "NAND Flash" intel NAND Flash Memory NAND Flash Qualification Reliability PDF

    Untitled

    Abstract: No abstract text available
    Text: Switching, Attenuation and Conferencing Family ICs Product Overview Type Short Title Function Page PEB 2045 MTSC Memory Time Switch CMOS 147 PEB 2046 MTSS Memory Time Switch Small 150 PEB 2047 MTSL Memory Time Switch Large 151 PEB 2047-16 MTSL-16 Memory Time Switch Large H-16 MHz


    OCR Scan     		82C258 82C257 MTSL-16 MUNICH32 PDF

    hitachi ic

    Abstract: hitachi eprom
    Text: Contents Refer to Hitachi IC Memory D ata Book No. 2 regarding DRAM, Synchronous DRAM, SGRAM, Frame and VRAM and Hitachi IC Memory Data Book No. 3 regarding Flash Memory, Flash Card, EEPROM, EPROM, OTPROM and M ask ROM and Hitachi IC Memory Data Book No. 4 regarding DRAM Module


    OCR Scan     		PDF

    LRS1821

    Abstract: 128M-BIT LRS1830 sharp LRS1360 IC-E102 128-MBIT
    Text: NEW PRODUCT INFORMATION LRS1830 128-Mbit Flash Memory+128-Mbit Flash Memory+32-Mbit RAM Combination Memory Under development < Outline > LRS1830, consisting of a 128-Mbit flash memory, a 128-Mbit flash memory, and a 32-Mbit RAM, is a composite memory chip that is


    Original     		LRS1830 128-Mbit 32-Mbit LRS1830, 256-Mbit 32-Mbit LRS1821 128M-BIT LRS1830 sharp LRS1360 IC-E102 PDF

    ddr5

    Abstract: DSP56301
    Text: 3 3.1 MEMORY MAPS INTRODUCTION The memory space of the DSP56301 is partitioned into program memory space P , X data memory space and Y data memory space. The program memory space (P) includes internal PRAM, internal Instruction Cache (that behaves as a PRAM when the cache is


    Original     		DSP56301 DSP56301: FFFF92 16-bit ddr5 PDF

    ddr3 ram

    Abstract: DDR4 motorola memory
    Text: Chapter 3 Memory Maps The memory space of the DSP56301 is partitioned into program memory space P , X data memory space and Y data memory space. The P memory space includes internal PRAM, an internal Instruction Cache that behaves as a PRAM when the cache is disabled, a boot


    Original     		DSP56301 DSP56301: 16-Bit ddr3 ram DDR4 motorola memory PDF

    AN-1149

    Abstract: AN1149 APP1149 MAX1637 MAX4130
    Text: Maxim > App Notes > POWER-SUPPLY CIRCUITS Keywords: DDR Memory-Termination Supply Jul 17, 2002 APPLICATION NOTE 1149 DDR Memory-Termination Supply The high-speed memory of workstations and servers contains double data rate DDR synchronous DRAMs (SDRAMs). These memory ICs operate with supply voltages of 2.5V or 1.8V, and require a reference voltage


    Original     		com/an1149 MAX1637: MAX4130: AN1149, APP1149, Appnote1149, AN-1149 AN1149 APP1149 MAX1637 MAX4130 PDF

    Untitled

    Abstract: No abstract text available
    Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVEF29F016U16SJ08-XX 16MB FLASH SIMM, based on AMD Am29F016D Uniform Sector Flash Memory DESCRIPTION PIN CONFIGURATIONS AVED Memory Products AVEF29F016U16SJ08-XX is a 5.0V flash memory SIMM, composed of eight CMOS


    Original     		AVEF29F016U16SJ08-XX Am29F016D AVEF29F016U16SJ08-XX 16Mbit 80-pin, 150ns PDF