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    MI33T

    Abstract: MIB33T
    Text: CRO MI33T MIB33T INFRARED EMITTING DIODE DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor.


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    PDF MI33T MIB33T MEL81N 100mA 10/xs, MI33T

    MI33T

    Abstract: MIB33T em micro
    Text: CRO MI33T MIB33T INFRARED EMITTING DIODE DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor.


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    PDF MI33T MIB33T MEL81N 10/xs, MI33T 100mA em micro

    MI33T

    Abstract: MIB33T
    Text: MI33T MIB33T INFRARED EMITTING DIODE DESCRIPTION MI33T & MIB33T are GaAs infrared emitting diode molded in a flangeless 3mm diameter clear plastic • package, with the lensing effect of the package, and MIB33T with cup type leadframe. MI33T & MIB33T are mechanically and spectrally matched to the MEL81N series photo transistor.


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    PDF MI33T MIB33T MI33T MEL81N 100mA 10/xs,

    HEL81

    Abstract: No abstract text available
    Text: MICRO E L E C T R O N I C S LT» 41E D □ fccm7flfl GOQO^ñb fi □ flEHK Y W /-Í, I MEL81 NPN SILICON PHOTO-TRANSI8T0R HEL81 is NPN silicon planar photo-transistor. It features ultra high illuaination sensitivity, fast response tiae, and spectrally Matched with


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    PDF MEL81 HEL81 MIC31TH. 20aU/ca2 RL-100Q

    diode lt 341

    Abstract: MICRO ELECTRONICS ltd transistor
    Text: MICRO ELEC TRONICS LT» MIE D bOWûfl aüO[H7ô ñ C 3 MEHK MIC31TH INFRARED EMITTING DIODE MIC31TH is a GaAlAs infrared emitting diode molded in clear 3mm 0 package. With the lensing effect of the package, it has an narrow radiation angle measured from the optical axis to the half power


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    PDF MIC31TH MIC31TH MEL81. 1/16H diode lt 341 MICRO ELECTRONICS ltd transistor

    2N1051

    Abstract: 2w105 2w1051 D 1414 transistor
    Text: M IL -S-19-.00/216A NAVY 28 April 1969 SUPERSED IN G M IL -S-19500/216(NAVY) 9 N o v e m b e r 1 *3 1 M ILIT A R Y SPEC IFIC A TIO N SEMICONDUCTOR D EV IC E. TRANSISTOR, NPN, SILIC G n T Y PE 2N1051 « AAAflB 1* o w v n 1.1 Scope. This specification covers the detail requirem ents lo r silicon,


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    PDF -19100/216A 2N1051 MIL-STD-750 MDL-S-19500, MIL-8-19500 5961-H179J 2N1051 2w105 2w1051 D 1414 transistor