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    MEDIUM POWER RF TRANSISTOR Search Results

    MEDIUM POWER RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MEDIUM POWER RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 2501

    Abstract: ic nec 2501 NESG250134 2501 NEC
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification


    Original     		PDF NESG250134 NESG250134-Tconductor nec 2501 ic nec 2501 NESG250134 2501 NEC

    NESG270034

    Abstract: ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		PDF NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ NESG270034 ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC

    1005 Ic Data

    Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ PU10547EJ02V0DS LLQ2021 1005 Ic Data IC MARKING 1005 1005 TRANSISTOR

    murata ma

    Abstract: MURATA/murata ma
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG250134 NESG250134-A NESG250134-T1-A PU10422EJ02V0DS murata ma MURATA/murata ma

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,


    Original     		PDF NESG2101M16 NESG2101M16 PU10395EJ03V0DS

    1005 Ic Data

    Abstract: NESG270034
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		PDF NESG270034 NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ PU10577EJ02V0DS 1005 Ic Data

    nec 2012

    Abstract: NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		PDF NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ nec 2012 NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ

    nec 2501

    Abstract: 2501 NEC ic nec 2501 NESG260234
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234 NESG260234-AZ NESG260234-T1 NESG260234-T1-AZ nec 2501 2501 NEC ic nec 2501

    NESG260234

    Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG260234 NESG260234-AZ NESG260234-T1 NESG260234 LLQ2021 NESG260234-T1 NESG260234-T1-AZ

    ic nec 2501

    Abstract: NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		PDF NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ ic nec 2501 NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor

    NESG250134

    Abstract: NESG250134-AZ NESG250134-T1-AZ
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG250134 NESG250134-AZ NESG250134-T1 NESG250134 NESG250134-AZ NESG250134-T1-AZ

    NESG2101M16

    Abstract: NESG2101M16-T3 NESG2101M16-T3-A
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M16 M8E0904E NESG2101M16 NESG2101M16-T3 NESG2101M16-T3-A

    transistor T1J

    Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
    Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,


    Original     		PDF NESG2101M05 NESG2101M05-A NESG2101M05-TERISTICS PU10190EJ02V0DS transistor T1J transistor T1J 4pin M05 MARKING

    NESG250134

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz


    Original     		PDF NESG250134 NESG250134-T1 NESG250134

    nec japan 7812

    Abstract: NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


    Original     		PDF 2SC5750 2SC5750-T1 nec japan 7812 NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751

    ne678m04-a

    Abstract: 2SC5753
    Text: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm


    Original     		PDF NE678M04 2SC5753 NE678M04-A 2SC5753-A NE678M04-T2-A 2SC5753-T2-A P15659EJ1V0DS 2SC5753

    nec 2501

    Abstract: marking NEC rf transistor ic nec 2501 PU10577EJ01V0DS nec 2012 2501 NEC NESG270034 nec npn rf 15 w RF POWER TRANSISTOR NPN
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz


    Original     		PDF NESG270034 NESG270034 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ nec 2501 marking NEC rf transistor ic nec 2501 PU10577EJ01V0DS nec 2012 2501 NEC nec npn rf 15 w RF POWER TRANSISTOR NPN

    NESG2101M16

    Abstract: NESG2101M16-T3
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M16 NESG2101M16 NESG2101M16-T3

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M16 NESG2101M16 M8E0904E

    p1565

    Abstract: 2SC5751
    Text: NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


    Original     		PDF NE677M04 2SC5751 NE677M04-A 2SC5751-A NE677M04-T2-A 2SC5751-T2-A P15657EJ1V0DS p1565 2SC5751

    nec 14305

    Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751
    Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm


    Original     		PDF 2SC5751 2SC5751-T2 nec 14305 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751

    transistor T1J

    Abstract: NESG2101M05-T1 NESG2101M05
    Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M05 PU10190EJ02V0DS transistor T1J NESG2101M05-T1 NESG2101M05

    transistor T1J

    Abstract: T1J marking
    Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification


    Original     		PDF NESG2101M05 NESG2101M05 transistor T1J T1J marking