MEDIUM BARRIER SCHOTTKY Search Results

SCHOTTKY DIODE SOT-143

Abstract: MA4E1339 MA4E1339A-1141T MA4E1339A-1146T MA4E1339A-287T MA4E1339B-1146T MA4E1339B-287T MA4E1339E-1068T MA4E1339A1 nh 04
Contextual Info: MA4E1339 Series Silicon Medium Barrier Schottky Diode Case Styles Features Medium Barrier Si Schottky Diode Available as Single Diode, Series Tee or Unconnected Pair n Surface Mount Packages n Tape and Reel n n SOT-23 SOT-143 SOT-323 SOD-323 Description The MA4E1339 series is a silicon, medium barrier Schottky

5082-2277

Contextual Info: 5082-2277 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The ASI 5082-2277 is a medium Barrier Schottky Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications from 2.4 to 4.8 GHz. PACKAGE STYLE 809 FEATURES INCLUDE: • Medium Barrier

5082-2830

Abstract: DIODE 809
Contextual Info: 5082-2830 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The ASI 5082-2830 is a medium Barrier Schottky Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 2.0 GHz. PACKAGE STYLE 809 FEATURES INCLUDE: • Medium Barrier

Contextual Info: Schottky switching diodes. Schottky detector diodes. Beam lead detector diodes. Schottky mixer diodes, medium barrier. Beam lead mixer diodes, low barrier.

Surface Mount RF Schottky Barrier Diodes

Contextual Info: MA4E1340 Series Silicon Medium Barrier Schottky Diode Features V 4.00 Package Outlines RF & Microwave Medium Barrier Silicon 70 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Packages

SCHOTTKY DIODES

Abstract: MNM201 MNM211 MNM202
Contextual Info: Medium Barrier Schottky Mixer Diodes Description The MicroMetrics MNM 200 series of Medium Barrier Schottky diodes are metal semiconductor junction devices that have a typical short reverse recovery time. This allows their use at high microwave frequencies when the

MA4E1340

Abstract: medium barrier schottky MA4E1340A-1146T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143 47 SOT143
Contextual Info: MA4E1340 Series Silicon Medium Barrier Schottky Diode Features V 4.00 Package Outlines RF & Microwave Medium Barrier Silicon 70 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Packages

Contextual Info: MA4E1338 Series Silicon Medium Barrier Schottky Diode Features V 3.00 Package Outlines RF & Microwave Medium Barrier Silicon 8 V Schottky Diode n Available as Single Diode, Series Pair or Unconnected Pair Configurations. n Low Profile Surface Mount Plastic Package

DME3005

Contextual Info: DME3005 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE DESCRIPTION: The ASI DME3005 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Ideal for MIC MAXIMUM RATINGS: PDISS 75 mW @ TA = 25 °C

DME2333-230

Abstract: MV13
Contextual Info: DME2333-230 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE 820 DESCRIPTION: The ASI DME2333-230 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Ideal for MIC MAXIMUM RATINGS: IC 100 mA PDISS

Contextual Info: MA4E1338 Series M/A-COM Products Silicon Medium Barrier Schottky Diodes Features • RF & Microwave Medium Barrier Silicon 8 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package

Contextual Info: MA4E1338 Series M/A-COM Products Silicon Medium Barrier Schottky Diodes Features • RF & Microwave Medium Barrier Silicon 8 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package

DME3057

Contextual Info: DME3057 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE 820 DESCRIPTION: The ASI DME3057 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Ideal for MIC MAXIMUM RATINGS: PDISS 75 mW @ TA = 25 °C

MA4E1340

Abstract: MA4E1340A-1141T MA4E1340A-1146T MA4E1340A1-287T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T MA4E1340E-1068T SCHOTTKY DIODE SOT-143
Contextual Info: Also Offering RoHS Compliant Equivalent Parts MA4E1340 Series V6 Silicon Medium Barrier Schottky Diodes Features • RF & Microwave Medium Barrier Silicon 70 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package

MADS-001338-12790T

Abstract: MA4E1338 MA4E1338A1-1146T MA4E1338A-1141T MA4E1338A-1146T MA4E1338A1-287T MA4E1338A-287T MA4E1338B-1146T MA4E1338B-287T MA4E1338E-1068T
Contextual Info: Also Offering RoHS Compliant Equivalent Parts MA4E1338 Series V4 Silicon Medium Barrier Schottky Diodes Features • RF & Microwave Medium Barrier Silicon 8 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package

SCHOTTKY DIODE SOT-143

Abstract: MA4E1338A1-1141T MA4E1338E1-1068T MADS-001338-12790T MA4E1338 MA4E1338A-1146T MA4E1338A1-287T MA4E1338A-287T MA4E1338B-1146T MA4E1338B-287T
Contextual Info: MA4E1338 Series Silicon Medium Barrier Schottky Diodes M/A-COM Products Rev. V7 Features • RF & Microwave Medium Barrier Silicon 8 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package

Contextual Info: 5082-2207 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE DESCRIPTION: The ASI 5082-2207 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure MAXIMUM RATINGS: PDISS 125 mW @ TA = 25 °C

MicroMetrics

Abstract: MCM500 MCM501 MCM502 MCM503 MCM504 MCM505
Contextual Info: Schottky Diodes: MCM 500 Series Medium Barrier Schottky Ring Quads Description The MicroMetrics MCM 500 series of Medium Barrier Ring Quads consists of four closely matched diodes connected in a ring configuration. The diodes are formed monolithically providing close matching of capacitance,

Contextual Info: Also Offering RoHS Compliant Equivalent Parts MA4E1339 Series V5 Silicon Medium Barrier Schottky Diodes Features • RF & Microwave Medium Barrier Silicon 20 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Packages

Contextual Info: MA4E1340 Series Silicon Medium Barrier Schottky Diodes M/A-COM Products Rev. V7 Features • RF & Microwave Medium Barrier Silicon 70 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package

MA4E1339

Abstract: MA4E1339A1-1141T MA4E1339A-1146T MA4E1339A1-287T MA4E1339A-287T MA4E1339B-1146T MA4E1339B-287T MA4E1339E-1068T
Contextual Info: MA4E1339 Series Silicon Medium Barrier Schottky Diodes M/A-COM Products Rev. V9 Features • RF & Microwave Medium Barrier Silicon 20 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Packages

MA4E1340E-1068T

Abstract: SOD-323 N SCHOTTKY DIODE SOT-143 MA4E1340 MA4E1340A1-1141T MA4E1340A-1146T MA4E1340A1-287T MA4E1340A-287T MA4E1340B-1146T MA4E1340B-287T
Contextual Info: MA4E1340 Series Silicon Medium Barrier Schottky Diodes M/A-COM Products Rev. V8 Features • RF & Microwave Medium Barrier Silicon 70 V Schottky Diode • Available as Single Diode, Series Pair or Unconnected Pair Configurations. • Low Profile Surface Mount Plastic Package

c 2785

Contextual Info: 5082-2785 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE 860 DESCRIPTION: The ASI 5082-2785 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure MAXIMUM RATINGS: PDISS 125 mW @ TA = 25 °C

5082-2209

Contextual Info: 5082-2209 SCHOTTKY MEDIUM BARRIER DIODE PACKAGE STYLE DESCRIPTION: The ASI 5082-2209 is a Medium Barrier Schottky Diode designed for General Purpose Mixer Applications. FEATURES INCLUDE: • Small size • Low noise fugure MAXIMUM RATINGS: PDISS 125 mW @ TA = 25 °C