TPH9R00CQ5
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) |
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MG800FXF1ZMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD |
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TPH1400CQ5
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 150 V, 32 A, 0.0141 Ω@10 V, High-speed diode, SOP Advance(N) |
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MG800FXF1JMS3
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Toshiba Electronic Devices & Storage Corporation
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N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET |
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TPH1100CQ5
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 150 V, 49 A, 0.0111 Ω@10 V, High-speed diode, SOP Advance(N) |
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