MDS1651 Search Results

MDS1651

Contextual Info: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent reliability. VDS = 30V ID = 11.6A@VGS = 10V

MDS1651

Contextual Info: Single N-Channel Trench MOSFET 30V, 11.6A, 17mΩ General Description Features The MDS1651 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability. MDS1651 is suitable device for PWM, Load

trench mosfet

Contextual Info: Preliminary – Subject to change without notice N-Channel Trench MOSFET 30V, 11.2A, 14.5mΩ Ω General Description Features The MDS1651S uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability with integrated

Contextual Info: Preliminary – Subject to change without notice Single N-Channel Trench MOSFET 30V, 11.6A, 14mΩ Ω General Description Features The MDS1651 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance

MDS1652

Contextual Info: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ Features General Description VDS = 30V ID = 13A @VGS = 10V RDS ON < 6.5mΩ @VGS = 10V < 8.5mΩ @VGS = 4.5V The MDS1652 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching

MDS1652

Abstract: Diode 4003 MagnaChip Semiconductor 82269
Contextual Info: Single N-Channel Trench MOSFET 30V, 13A, 6.5mΩ General Description Features The MDS1652 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. Excellent low RDS ON , low gate charge and operation for