Untitled
Abstract: No abstract text available
Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
|
Original
|
EN71NS128C0
EN71NS128C0
16-bit)
108MHz)
EN71NS
E29NS128
ENPSS64
|
PDF
|
EN29NS128
Abstract: E29NS128 PSEUDO SRAM EN71NS PSRAM
Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
|
Original
|
EN71NS128C0
EN71NS128C0
16-bit)
108MHz)
EN71NS
E29NS128
ENPSS64
EN29NS128
E29NS128
PSEUDO SRAM
PSRAM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EN71PL032A0A EN71PL032A Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
|
Original
|
EN71PL032A0A
EN71PL032A
16-bit)
EN71PL
EN29PL032A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EN71NS128B0 EN71NS128B0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
|
Original
|
EN71NS128B0
EN71NS128B0
16-bit)
108MHz)
EN71NS
E29NS128
|
PDF
|
EN71PL032A0
Abstract: EN71PL032 EN29PL032 PSRAM EN71PL
Text: EN71PL032A0 EN71PL032 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
|
Original
|
EN71PL032A0
EN71PL032
16-bit)
EN71PL
EN29PL032
EN29PL064/032
EM566168GD
EN71PL032A0
EN29PL032
PSRAM
|
PDF
|
EN71NS128B0
Abstract: ENPSS32 EN29NS128 E29NS128 EN71NS EN29NS sa-129
Text: EN71NS128B0 EN71NS128B0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
|
Original
|
EN71NS128B0
EN71NS128B0
16-bit)
108MHz)
EN71NS
E29NS128
ENPSS32
EN29NS128
E29NS128
EN29NS
sa-129
|
PDF
|
Flash MCp nand DRAM 107-ball
Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM
|
Original
|
KAG00H008M-FGG2
256Mb
32Mx8)
4Mx16x4Banks)
128Mb
107-Ball
80x13
Flash MCp nand DRAM 107-ball
SAMSUNG MCP
nand sdram mcp
KAG00H008M-FGG2
UtRAM Density
|
PDF
|
SAMSUNG MCP
Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
Text: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM
|
Original
|
K5D5657DCM-F015
256Mb
32Mx8)
4Mx16x4Banks)
107-Ball
SAMSUNG MCP
Flash MCp nand DRAM 107-ball
K5D5657DCM-F015
SAMSUNG 256Mb mcp Qualification Reliability
dq15d
samsung mcp 107-ball
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EN71NS128B0 EN71NS128B0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
|
Original
|
EN71NS128B0
EN71NS128B0
16-bit)
108MHz)
EN71NS
E29NS128
|
PDF
|
SAMSUNG MCP
Abstract: KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball
Text: Advance Preliminary MCP MEMORY KAG00E007M-FGGV MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 September 2003 Advance Preliminary MCP MEMORY KAG00E007M-FGGV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM
|
Original
|
KAG00E007M-FGGV
256Mb
16Mx16)
4Mx16x4Banks)
107-Ball
80x13
SAMSUNG MCP
KAG00E007M-FGGV
UtRAM Density
samsung nor nand ddr mcp
samsung mcp 107-ball
Flash MCp nand DRAM 107-ball
|
PDF
|
Flash MCp nand DRAM 107-ball
Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
Text: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM
|
Original
|
KAG00J007M-FGG2
256Mb
32Mx8)
4Mx16x4Banks)
107-Ball
80x13
Flash MCp nand DRAM 107-ball
dq15d
SAMSUNG MCP
130 MCP NAND DDR
512M nand mcp
SAMSUNG MCp nand ddr
KAG00J007M-FGG2
UtRAM Density
nand mcp samsung ka
|
PDF
|
Samsung MCP
Abstract: MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR
Text: Advance Preliminary MCP MEMORY K5D5657ACM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Preliminary MCP MEMORY K5D5657ACM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM
|
Original
|
K5D5657ACM-F015
256Mb
32Mx8)
4Mx16x4Banks)
128Mb
107-Ball
80x13
Samsung MCP
MCP NAND
K5D5657ACM
K5D5657ACM-F015
MCP 256M nand samsung mobile DDR
|
PDF
|
MCP market
Abstract: No abstract text available
Text: Multi Chip Package MCP Flash Memory and SRAM Solutions Small footprint consistent packaging Succeed with Flash technology leadership from AMD Succeed with AMD’s industry-leading family of multi-chip package (MCP) Flash and SRAM memory solutions. AMD’s MCP solutions feature high-performance AMD Flash and the highest quality SRAM, in a single convenient
|
Original
|
5451A
MCP market
|
PDF
|
internal block diagram of mobile phone
Abstract: 64M-BIT mobile phone circuit diagram stacked MCP 32M-BIT 32-Mbit
Text: 2 chip Stacked MCP 9mmx9mm Series New products A Combination of Flash Memory and Mobile FCRAM /SRAM− 2 chip Stacked MCP 9mm×9mm Series TM This double chip stacked MCP with two different configurations is stored in a common 9mm×9mm package. Compared to our existing MCPs with similar
|
Original
|
64M-bit
internal block diagram of mobile phone
mobile phone circuit diagram
stacked MCP
32M-BIT
32-Mbit
|
PDF
|
|
|
INDEPENDENT INK 73X
Abstract: FTA073 S29JL064H spansion pdip 32 marking format 3105P
Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features
|
Original
|
S71JL128HC0/128HB0/064HB0/
064HA0/064H80
S71JLxxxH
S29JL064H
16-only
73-ball
88-ball
S71JLxxxHxx
INDEPENDENT INK 73X
FTA073
spansion pdip 32 marking format
3105P
|
PDF
|
INDEPENDENT INK 73X
Abstract: FTA073 S29JL064H mA109p
Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features
|
Original
|
S71JL128HC0/128HB0/064HB0/
064HA0/064H80
S71JLxxxH
S29JL064H
16-only
73-ball
88-ball
S71JLxxxHxx
INDEPENDENT INK 73X
FTA073
mA109p
|
PDF
|
INDEPENDENT INK 73X
Abstract: CEF-A21 71jl128 bonus ball sheets S71JL064HA0BAW01
Text: S71JL128HC0/128HB0/064HB0/ 064HA0/064H80 Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories and Static RAM/Pseudo-static RAM PRELIMINARY DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features
|
Original
|
S71JL128HC0/128HB0/064HB0/
064HA0/064H80
73-ball
88-ball
S71JLxxxH
S29JL064H
16-only
S71JLxxxHxx
INDEPENDENT INK 73X
CEF-A21
71jl128
bonus ball sheets
S71JL064HA0BAW01
|
PDF
|
graphic card circuit diagram
Abstract: SMART ASIC bga HJ945010BP SH3-DSP hitachi sh3 network 7729R hitachi sh3 MCP market SH7729 hm52256
Text: EP-MT-01002A-02 Hitachi MCM/MCP Products Hitachi MCM/MCP Products Feb.1st, 2001 Multi Chip Module Products Design Dept. DRAM Business Division Semiconductor & Integrated Circuits Hitachi Ltd. EP-MT-01002A-02 Hitachi MCM/MCP Products 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright,
|
Original
|
EP-MT-01002A-02
SH7709A,
SH7709S
SH7729
SH7729R
ADE-A03-006D
graphic card circuit diagram
SMART ASIC bga
HJ945010BP
SH3-DSP
hitachi sh3 network
7729R
hitachi sh3
MCP market
hm52256
|
PDF
|
S71WS256PC0HH3YR
Abstract: SWM064D133S1R S71WS256Pc0 S71WS256PC0HH S71WS256PC0HH3 SWM032D S71WS256PC S71WS512PD0HH3Y S71WS256PD
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
S71WS-P
S71WS256PC0HH3YR
SWM064D133S1R
S71WS256Pc0
S71WS256PC0HH
S71WS256PC0HH3
SWM032D
S71WS256PC
S71WS512PD0HH3Y
S71WS256PD
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IS71V08F32XS08 IS71V16F32XS08 ISSI 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM MCP FEATURES PRELIMINARY INFORMATION FEBRUARY 2002 • Ready-Busy output (RY/BY): Detection
|
Original
|
IS71V08F32XS08
IS71V16F32XS08
73-ball
|
PDF
|
Untitled
Abstract: No abstract text available
Text: EN71NS032A0 EN71NS032A0 Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2M x 16-bit) CMOS 1.8 Volt-only Burst Simultaneous Operation, Multiplexed Flash Memory and 16 Megabit (1M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
|
Original
|
EN71NS032A0
16-bit)
108MHz)
EN71NS032A0
individ20
|
PDF
|
SGA17
Abstract: 1F0000H-1FFFFFH 240000H-24FFFFH
Text: ISSI IS71V08F32ESx08 IS71V16F32ESx08 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM PRELIMINARY INFORMATION OCTOBER 2002 MCP FEATURES • Power supply voltage 2.7V to 3.3V
|
Original
|
IS71V08F32ESx08
IS71V16F32ESx08
73-ball
-40oC
IS71V16F32ESB08-7070BI
IS71V16F32EST08-7070BI
IS71V08F32ESB08-7070BI
IS71V08F32EST08-7070BI
SGA17
1F0000H-1FFFFFH
240000H-24FFFFH
|
PDF
|
S71WS256PC0HH3
Abstract: S71WS512PD0HH3 SWM032D spansion date code marking TRAY FBGA 11X13 S71WS256PD0HH3 S71WS256PC0HH3YR SWM064D133S1R S71WS256PC0HF3
Text: S71WS-P based MCP Products 1.8 Volt-only x16 Simultaneous Read/Write, Burst Mode Flash Memory with CellularRAM Data Sheet S71WS-P based MCP Products Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion
|
Original
|
S71WS-P
S71WS256PC0HH3
S71WS512PD0HH3
SWM032D
spansion date code marking
TRAY FBGA 11X13
S71WS256PD0HH3
S71WS256PC0HH3YR
SWM064D133S1R
S71WS256PC0HF3
|
PDF
|
MCP NOR FLASH SDRAM elpida
Abstract: "content addressable memory" precharge Ramp b001 EHB0010A1MA Spansion ddr ELPIDA DDR User s99pl
Text: DATA SHEET 64Mb Flash Memory + 512Mb DDR SDRAM MCP EHB0010A1MA Description DDR SDRAM Specifications The EHB0010A1MA is a MCP Multi Chip Package ; TM 64M bits flash memory organized the Spansion (S99PL064J0039) and the Elpida 512M bits DDR SDRAM in one package.
|
Original
|
512Mb
EHB0010A1MA
EHB0010A1MA
S99PL064J0039)
151-ball
266Mbps
M01E0107
E0950E30
MCP NOR FLASH SDRAM elpida
"content addressable memory" precharge Ramp
b001
Spansion ddr
ELPIDA DDR User
s99pl
|
PDF
|
