Untitled
Abstract: No abstract text available
Text: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words
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Original
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CXK79M36C163GB
CXK79M18C163GB
512Kb
CXK79M36C163GB
-10uA
-20uA
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PDF
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Untitled
Abstract: No abstract text available
Text: SONY ΣRAM CXK79M36C162GB / CXK79M18C162GB 18Mb 1x2Lp HSTL High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C162GB (organized as 524,288 words by 36 bits) and the CXK79M18C162GB (organized as 1,048,576 words
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Original
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CXK79M36C162GB
CXK79M18C162GB
512Kb
CXK79M36C162GB
-10uA
-20uA
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PDF
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a7w29
Abstract: CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5 CXK79M18C163GB CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M18C163GB-5 CXK79M36C163GB
Text: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words
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Original
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CXK79M36C163GB
CXK79M18C163GB
512Kb
CXK79M36C163GB
IDD-33
IDD-44
a7w29
CXK79M36C163GB-33
CXK79M36C163GB-4
CXK79M36C163GB-5
CXK79M18C163GB
CXK79M18C163GB-33
CXK79M18C163GB-4
CXK79M18C163GB-5
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PDF
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2U 73 diode
Abstract: CXK79M18C165GB CXK79M36C165GB CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Text: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36
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Original
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CXK79M72C165GB
CXK79M36C165GB
CXK79M18C165GB
256Kb
512Kb
-10uA
-20uA
2U 73 diode
CXK79M18C165GB
CXK79M36C165GB
CXK79M36C165GB-33
CXK79M36C165GB-4
CXK79M72C165GB
CXK79M72C165GB-33
CXK79M72C165GB-4
CXK79M72C165GB-5
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PDF
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Untitled
Abstract: No abstract text available
Text: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36
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Original
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CXK79M72C161GB
CXK79M36C161GB
CXK79M18C161GB
256Kb
512Kb
CXK79M72C161GB
-10uA
-20uA
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PDF
|
Untitled
Abstract: No abstract text available
Text: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36
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Original
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CXK79M72C160GB
CXK79M36C160GB
CXK79M18C160GB
256Kb
512Kb
CXK79M72C160GB
-10uA
-20uA
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PDF
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CXK79M18C164GB
Abstract: CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5
Text: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36
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Original
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CXK79M72C164GB
CXK79M36C164GB
CXK79M18C164GB
256Kb
512Kb
-10uA
-20uA
CXK79M18C164GB
CXK79M36C164GB
CXK79M36C164GB-33
CXK79M36C164GB-4
CXK79M72C164GB
CXK79M72C164GB-33
CXK79M72C164GB-4
CXK79M72C164GB-5
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PDF
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CXK79M36C163GB
Abstract: CXK79M36C163GB-33 CXK79M36C163GB-4 CXK79M36C163GB-5
Text: SONY ΣRAM CXK79M36C163GB 18Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 33/4/5 Preliminary Description The CXK79M36C163GB is a high speed CMOS synchronous static RAM with common I/O pins. It is manufactured in compliance with the JEDEC-standard 209 pin BGA package pinout defined for SigmaRAM™ devices. It integrates input registers,
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Original
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CXK79M36C163GB
512Kb
CXK79M36C163GB
CXK79M36C163GB-33
CXK79M36C163GB-4
CXK79M36C163GB-5
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PDF
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CXK79M18C162GB
Abstract: CXK79M18C162GB-33 CXK79M18C162GB-4 CXK79M18C162GB-5 CXK79M36C162GB CXK79M36C162GB-33 CXK79M36C162GB-4 CXK79M36C162GB-5 AA119
Text: SONY ΣRAM CXK79M36C162GB / CXK79M18C162GB 18Mb 1x2Lp HSTL High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M36C162GB (organized as 524,288 words by 36 bits) and the CXK79M18C162GB (organized as 1,048,576 words
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Original
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CXK79M36C162GB
CXK79M18C162GB
512Kb
CXK79M36C162GB
IDD-33
IDD-44
CXK79M18C162GB
CXK79M18C162GB-33
CXK79M18C162GB-4
CXK79M18C162GB-5
CXK79M36C162GB-33
CXK79M36C162GB-4
CXK79M36C162GB-5
AA119
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PDF
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CXK79M36C162GB
Abstract: CXK79M36C162GB-33 CXK79M36C162GB-4 CXK79M36C162GB-5
Text: SONY ΣRAM CXK79M36C162GB 18Mb 1x2Lp HSTL High Speed Synchronous SRAMs 512Kb x 36 33/4/5 Preliminary Description The CXK79M36C162GB is a high speed CMOS synchronous static RAM with common I/O pins. It is manufactured in compliance with the JEDEC-standard 209 pin BGA package pinout defined for SigmaRAM™ devices. It integrates input registers,
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Original
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CXK79M36C162GB
512Kb
CXK79M36C162GB
CXK79M36C162GB-33
CXK79M36C162GB-4
CXK79M36C162GB-5
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PDF
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CXK79M36C165GB
Abstract: CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M36C165GB-5 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Text: SONY ΣRAM CXK79M72C165GB / CXK79M36C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits) and the CXK79M36C165GB (organized as 524,288 words
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Original
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CXK79M72C165GB
CXK79M36C165GB
256Kb
512Kb
CXK79M72C165GB
CXK79M36C165GB
CXK79M36C165GB-33
CXK79M36C165GB-4
CXK79M36C165GB-5
CXK79M72C165GB-33
CXK79M72C165GB-4
CXK79M72C165GB-5
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PDF
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CXK79M36C160GB
Abstract: CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5
Text: SONY ΣRAM CXK79M72C160GB / CXK79M36C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits) and the CXK79M36C160GB (organized as 524,288 words
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Original
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CXK79M72C160GB
CXK79M36C160GB
256Kb
512Kb
CXK79M72C160GB
CXK79M36C160GB
CXK79M36C160GB-33
CXK79M36C160GB-4
CXK79M36C160GB-5
CXK79M72C160GB-33
CXK79M72C160GB-4
CXK79M72C160GB-5
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PDF
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CXK79M36C164GB
Abstract: CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M36C164GB-5 CXK79M72C164GB CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5
Text: SONY ΣRAM CXK79M72C164GB / CXK79M36C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits) and the CXK79M36C164GB (organized as 524,288 words
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Original
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CXK79M72C164GB
CXK79M36C164GB
256Kb
512Kb
CXK79M72C164GB
CXK79M36C164GB
CXK79M36C164GB-33
CXK79M36C164GB-4
CXK79M36C164GB-5
CXK79M72C164GB-33
CXK79M72C164GB-4
CXK79M72C164GB-5
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PDF
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CXK79M36C161GB
Abstract: CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M36C161GB-5 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 diode 2U 6A
Text: SONY ΣRAM CXK79M72C161GB / CXK79M36C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits) and the CXK79M36C161GB (organized as 524,288 words
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Original
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CXK79M72C161GB
CXK79M36C161GB
256Kb
512Kb
CXK79M72C161GB
CXK79M36C161GB
CXK79M36C161GB-33
CXK79M36C161GB-4
CXK79M36C161GB-5
CXK79M72C161GB-4
CXK79M72C161GB-5
diode 2U 6A
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CXK79M72C164GB-33
Abstract: CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5
Text: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36
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Original
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CXK79M72C164GB
CXK79M36C164GB
CXK79M18C164GB
256Kb
512Kb
IDD-33
IDD-44
CXK79M72C164GB-33
CXK79M18C164GB
CXK79M36C164GB
CXK79M36C164GB-33
CXK79M36C164GB-4
CXK79M72C164GB
CXK79M72C164GB-4
CXK79M72C164GB-5
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PDF
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CXK79M18C165GB
Abstract: CXK79M36C165GB CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
Text: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36
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Original
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CXK79M72C165GB
CXK79M36C165GB
CXK79M18C165GB
256Kb
512Kb
IDD-33
IDD-44
CXK79M18C165GB
CXK79M36C165GB
CXK79M36C165GB-33
CXK79M36C165GB-4
CXK79M72C165GB
CXK79M72C165GB-33
CXK79M72C165GB-4
CXK79M72C165GB-5
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PDF
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A7W17
Abstract: CXK79M18C160GB CXK79M36C160GB CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5 2a 105
Text: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36
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Original
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CXK79M72C160GB
CXK79M36C160GB
CXK79M18C160GB
256Kb
512Kb
IDD-33
IDD-44
A7W17
CXK79M18C160GB
CXK79M36C160GB
CXK79M36C160GB-33
CXK79M36C160GB-4
CXK79M72C160GB
CXK79M72C160GB-33
CXK79M72C160GB-4
CXK79M72C160GB-5
2a 105
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PDF
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Ultrasonic cleaner circuit diagram
Abstract: MARCONI power P35-5133-000-200 H40P NN12
Text: P35-5133-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 24GHz Features • • • • Gain; 19dB typical @ 24GHz P-1dB; 29dBm typical @ 24GHz 20% PAE 0.20 um pHEMT technology Description The P35-5133-000-200 is a high performance 24GHz Gallium Arsenide power amplifier, capable of output powers
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Original
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P35-5133-000-200
24GHz
29dBm
P35-5133-000-200
24GHz
463/SM/02226/000
Ultrasonic cleaner circuit diagram
MARCONI power
H40P
NN12
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PDF
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Untitled
Abstract: No abstract text available
Text: Ceramic ! NEW High Pass Filter HFTC-19 2300 to 5500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 125°C • • • • miniature size, 0.15"X0.15"X.028" low profile, .028" height low pass band insertion loss, 1.0 dB typ.
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Original
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HFTC-19
FR933
HFTC-19
DC-1450
TB-233
PL-112)
M84851
EDB-020541
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PDF
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Untitled
Abstract: No abstract text available
Text: Ceramic ! NEW High Pass Filter HFTC-39 4500 to 5500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 125°C • • • • miniature size, 0.15"X0.15"X.028" low profile, .028" height low pass band insertion loss, 1.0 dB typ.
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Original
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HFTC-39
FR933
HFTC-39
DC-1900
TB-233
PL-112)
M84851
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PDF
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CXK79M18C163GB
Abstract: CXK79M18C163GB-33 CXK79M18C163GB-4 CXK79M36C163GB CXK79M36C163GB-33 CXK79M36C163GB-4
Text: SONY ΣRAM CXK79M36C163GB / CXK79M18C163GB 16Mb 1x2Lp LVCMOS High Speed Synchronous SRAMs 512Kb x 36 or 1Mb x 18 33/4/44 Preliminary Description The CXK79M36C163GB (organized as 524,288 words by 36 bits) and the CXK79M18C163GB (organized as 1,048,576 words
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Original
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CXK79M36C163GB
CXK79M18C163GB
512Kb
CXK79M36C163GB
IDD-33
IDD-44
CXK79M18C163GB
CXK79M18C163GB-33
CXK79M18C163GB-4
CXK79M36C163GB-33
CXK79M36C163GB-4
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PDF
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Untitled
Abstract: No abstract text available
Text: Ceramic ! NEW High Pass Filter HFTC-19 2300 to 5500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 125°C • • • • miniature size, 0.15"X0.15"X.028" low profile, .028" height low pass band insertion loss, 1.0 dB typ.
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Original
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HFTC-19
FR933
HFTC-19
DC-1450
TB-233
PL-112)
M85413
EDB-020541
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. S S L - L X 1 001 33UWW 010.00 [0 0 .3 9 4 ] CAUTION: STATIC SENSITIVE mCl FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. 1 3 .5 0 011.00 [0 0 .4 3 3 ] ELECTRO-OPTICAL CHARACTERISTICS Ta =25‘ C
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OCR Scan
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33UWW
C00RDINATES(
DECL05URE
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PDF
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FOR1dB
Abstract: No abstract text available
Text: . I * DOUBLE BALANCED MIXER M ODEL M 0 .4 5 0 # 1 RF, LO 5-500 MHz; IF D C -500 MHz LO Power +23 dBm Relay Header MCL Model RAY-1 Replacement Guaranteed Specifications* From -55°C to +85°C 5 - 500 MHz DC - 500 MHz Frequency Range RF, LO Ports IF Port Conversion Loss
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OCR Scan
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MD-450
FOR1dB
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PDF
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