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    MC14012B DATA ONLY Search Results

    MC14012B DATA ONLY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet
    MP-52RJ11SNNE-015 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-015 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 15ft Datasheet
    MP-52RJ11UNNE-025 Amphenol Cables on Demand Amphenol MP-52RJ11UNNE-025 CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 25ft Datasheet
    MP-52RJ11SNNE-005 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-005 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 5ft Datasheet
    MP-52RJ11UNNE-007 Amphenol Cables on Demand Amphenol MP-52RJ11UNNE-007 CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 7ft Datasheet

    MC14012B DATA ONLY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    14012BG

    Abstract: MC14012B MC14012BCP CD4000 MC14012BCPG MC14012BD SOIC-14 14012B
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4-input NAND gates are constructed with P-Channel and N-Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


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    MC14012B MC14012B CD4000 PDIP-14 MC14012BCP SOIC-14 14012BG MC14012BCP MC14012BCPG MC14012BD SOIC-14 14012B PDF

    Untitled

    Abstract: No abstract text available
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original
    MC14012B PDIP-14 SOIC-14 14012BG MC14012BCP MC14012B/D PDF

    MC14012BCP

    Abstract: No abstract text available
    Text: MC14012B B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


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    MC14012B CD4000 MC14012BCP MC14012BD 51A-03 \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 3\ONSM\08112000 MC14012BDR2 MC14012BF PDF

    Untitled

    Abstract: No abstract text available
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original
    MC14012B MC14012B CD4000 MC14012B/D PDF

    gate drive protection inverter

    Abstract: 47 vfk 4-input nand gates ttl power inverter circuit diagram schematics voltage inverter schematic TL 413 CD4000 series applications MC14012BCP p-Channel Logic Level Enhancement Mode schematic diagram inverter control
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4-input NAND gates are constructed with P-Channel and N-Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original
    MC14012B MC14012B CD4000 PDIP-14 MC14012BCP SOIC-14 MC14012B/D gate drive protection inverter 47 vfk 4-input nand gates ttl power inverter circuit diagram schematics voltage inverter schematic TL 413 CD4000 series applications MC14012BCP p-Channel Logic Level Enhancement Mode schematic diagram inverter control PDF

    4 nand dip 16

    Abstract: 14012B CD4000 MC14012B MC14012BCP MC14012BCPG MC14012BD MC14012BDG MC14012BDR2 MC14012BDR2G
    Text: MC14012B B−Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original
    MC14012B CD4000 PDIP-14 MC14012BCP SOIC-14 MC14012B/D 4 nand dip 16 14012B MC14012B MC14012BCP MC14012BCPG MC14012BD MC14012BDG MC14012BDR2 MC14012BDR2G PDF

    CD4000

    Abstract: MC14012B MC14012BCP MC14012BCPG MC14012BD MC14012BDG MC14012BDR2 MC14012BDR2G 14012BG 14012B
    Text: MC14012B B−Suffix Series CMOS Gates The B Series logic gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original
    MC14012B CD4000 PDIP-14 MC14012BCP SOIC-14 MC14012B/D MC14012B MC14012BCP MC14012BCPG MC14012BD MC14012BDG MC14012BDR2 MC14012BDR2G 14012BG 14012B PDF

    Untitled

    Abstract: No abstract text available
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original
    MC14012B MC14012B CD4000 MC14012B/D PDF

    MC14012

    Abstract: mc14012b 14012BG
    Text: MC14012B Dual 4-Input NAND Gates The MC14012B dual 4−input NAND gates are constructed with P−Channel and N−Channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


    Original
    MC14012B PDIP-14 MC14012BCP CD4000 MC14012B/D MC14012 14012BG PDF

    MC14012BCP

    Abstract: 14012B CD4000 MC14012B MC14012BD MC14012BDR2 MC14012BF MC14012BFEL
    Text: MC14012B B-Suffix Series CMOS Gates The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired.


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    MC14012B CD4000 MC14012BCP r14525 MC14012B/D MC14012BCP 14012B MC14012B MC14012BD MC14012BDR2 MC14012BF MC14012BFEL PDF

    MC14081B

    Abstract: MC14001 MC14001B MC14002B MC14078 MC14025B MC14068B MC14078B CD4000 MC14011B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14001B Quad 2-Input NOR Gate B-Suffix Series CMOS Gates MC14002B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high


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    MC14001B MC14002B MC14011B MC14081B CD4000 MC14068B MC14078B MC14001B/D* MC14001B/D MC14081B MC14001 MC14001B MC14002B MC14078 MC14025B PDF

    motorola MC14001B

    Abstract: MC14001 MC14078 MC14002B MC14011B MC14068B MC14081B MC14001B MC14012B MC14023B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14001B Quad 2-Input NOR Gate B-Suffix Series CMOS Gates MC14002B The B Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high


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    MC14001B MC14002B MC14011B MC14081B CD4000 MC14068B MC14078B MC14001B/D* MC14001B/D motorola MC14001B MC14001 MC14078 MC14002B MC14081B MC14001B MC14012B MC14023B PDF

    MC14040B

    Abstract: CD4040B MC14012B MC14038B MC14XXXBCL MC14XXXBCP MC14XXXBD
    Text: MOTOROLA MC14038B See Page 6-92 SEMICONDUCTOR TECHNICAL DATA MC14040B 12-Bit Binary Counter L SUFFIX CERAMIC CASE 620 The MC14040B 12–stage binary counter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit


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    MC14038B MC14040B 12-Bit MC14040B MC14040B/D* MC14040B/D CD4040B MC14012B MC14038B MC14XXXBCL MC14XXXBCP MC14XXXBD PDF

    040B

    Abstract: 14040B 948F CD4040B MC14040B MC14040BCP MC14040BD MC14040BDR2 MC14040BDT
    Text: MC14040B 12-Bit Binary Counter The MC14040B 12–stage binary counter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple–carry binary counter. The device


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    MC14040B 12-Bit MC14040B r14525 MC14040B/D 040B 14040B 948F CD4040B MC14040BCP MC14040BD MC14040BDR2 MC14040BDT PDF

    14040B

    Abstract: MC14040B
    Text: MC14040B 12-Bit Binary Counter The MC14040B 12–stage binary counter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple–carry binary counter. The device


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    MC14040B 12-Bit MC14040BCP 14040B MC14040BDT MC14040BFL2 MC14040BFR1 MC14040BFR2 PDF

    14040B

    Abstract: mc14040b 14012B QQQ11
    Text: MC14040B 12−Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device


    Original
    MC14040B 12-Bit 12-stage PDIP-16 MC14040BCP SOIC-16 14040B MC14040B. MC14012B 14012B QQQ11 PDF

    14040b

    Abstract: No abstract text available
    Text: MC14040B 12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device


    Original
    MC14040B 12-Bit MC14040B MC14040B/D 14040b PDF

    Untitled

    Abstract: No abstract text available
    Text: MC14040B 12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device


    Original
    MC14040B 12-Bit MC14040B MC14040B/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MC14040B 12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device


    Original
    MC14040B 12-Bit 12-stage PDIP-16 MC14040BCP SOIC-16 TSSOP-16 14040BG MC14040B/D PDF

    14040BG

    Abstract: MC14012 14012B HC14A mc14040bcpg
    Text: MC14040B 12-Bit Binary Counter The MC14040B 12−stage binary counter is constructed with MOS P−Channel and N−Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple−carry binary counter. The device


    Original
    MC14040B 12-Bit 12-stage PDIP-16 MC14040BCP SOIC-16 14040BG MC14040B/D MC14012 14012B HC14A mc14040bcpg PDF

    14040BG

    Abstract: 948F CD4040B MC14040B MC14040BCP SOIC-16 TSSOP-16 14040b
    Text: MC14040B 12-Bit Binary Counter The MC14040B 12-stage binary counter is constructed with MOS P-Channel and N-Channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple-carry binary counter. The device


    Original
    MC14040B 12-Bit MC14040B 12-stage PDIP-16 MC14040B/D 14040BG 948F CD4040B MC14040BCP SOIC-16 TSSOP-16 14040b PDF

    14040b

    Abstract: HC14A MC14040BCP 14012B 040B 948F CD4040B MC14040B MC14040BD MC14040BDR2
    Text: MC14040B 12-Bit Binary Counter The MC14040B 12–stage binary counter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. This part is designed with an input wave shaping circuit and 12 stages of ripple–carry binary counter. The device


    Original
    MC14040B 12-Bit MC14040B r14525 MC14040B/D 14040b HC14A MC14040BCP 14012B 040B 948F CD4040B MC14040BD MC14040BDR2 PDF

    MC14002B

    Abstract: ic mc14001 IC MC14011 MC14068B MC14001B MC14011B MC14075B MC14001 MC14078B CD4000 NOR gate
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C14001B Quad 2 -In p u t NOR G ate B-Suffix S e rie s CM OS G a te s M C14002B T he B S e rie s lo g ic g a te s are c o n s tru c te d w ith P and N c h a n n e l enhancem ent mode devices in a single monolithic structure Complemen­


    OCR Scan
    MC14011B MC14081B CD4000 MC14068B MC14078B) mc14001b/d MC14001B/D MC14002B ic mc14001 IC MC14011 MC14001B MC14075B MC14001 MC14078B CD4000 NOR gate PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA M CI 4038B S e e Page 6-92 SEMICONDUCTOR TECHNICAL DATA MC14040B 12-Bit Binary Counter L SUFFIX T h e M C 1 4 0 4 0 B 1 2 - s ta g e b in a ry c o u n te r is c o n s tru c te d w ith M O S P - c h a n n e l a n d N - c h a n n e l e n h a n c e m e n t m o d e d e v ic e s in a s in g le


    OCR Scan
    4038B MC14040B 12-Bit MC14040B/D PDF