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    MC 4016 B IC Search Results

    MC 4016 B IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SZ07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), SOT-353 (USV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7W66FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), SPST Analog Switch, SOT-765 (US8), 2 in 1, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7SET125F Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-25 (SMV), -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC7WH125FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-505 (SM8), 2 in 1, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    MC 4016 B IC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4017 equivalent

    Abstract: MC4316 4018 counter MC40175 and pin diagram of 4017 MC4016 internal circuit diagram MC3005 MC4017 MC4018 MC4019
    Text: MC4316 @ MC4016 ISSUE B ,.-. MC4317 o MC4017 MC4318 o MC4018 MC4319● MC4019 The monolithic devices are programmable, cascadable, modulm N-counters. The MC4316/4016 can be programmed to divide by any number N from O thru 9, the MC4318/4018 from O thru 15.


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    MC4316 MC4016 MC4317 MC4017 MC4318 MC4018 MC4319 MC4019 MC4316/4016 MC4318/4018 4017 equivalent MC4316 4018 counter MC40175 and pin diagram of 4017 MC4016 internal circuit diagram MC3005 MC4017 MC4018 MC4019 PDF

    xl 1507

    Abstract: IN270 1N270 JAN part marking lvb diode germanium 1n270 GE 141L gold bonded germanium diode 1N270 1N270 diode equivalent xl 4016 1N270
    Text: ., i_ I TNcR=mml MI L-S- 195001200B 9 JUNE 1989 u lNG MIL-s-19500/2ooA 19 April 1968 MILITARY SPECIFICATION SEMICONDUCTOR OEVICE, OIOOE, GERMANIUM TYPE 1N270 JAN, JANTX, ANO JANTXV This specification is ments and Agencies 1. approved of the for use by all DepartDepartment


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    195001200B MIL-s-19500/2ooA 1N270 L-S-19500. L-S-19500 xl 1507 IN270 1N270 JAN part marking lvb diode germanium 1n270 GE 141L gold bonded germanium diode 1N270 1N270 diode equivalent xl 4016 PDF

    pin diagram of ic 4016

    Abstract: IC 4016 PIN DIAGRAM 4016 PIN DIAGRAM MC4018 rp11110 4016D
    Text: MC4316 MC4016 MC4018 MOTOROLA PROGRAMMABLE MODULO-N COUNTERS PROGRAMMABLE M ODULO-N COUNTERS The m o n o lith ic devices are p ro g ra m m a b le , cascadable, modulo-N-counters. The MC4316/4016 can be program m ed to divide by any num ber N fro m 0 thru 9, the MC4018 from 0


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    MC4316 MC4016 MC4018 MC4316/4016 MC4018 pin diagram of ic 4016 IC 4016 PIN DIAGRAM 4016 PIN DIAGRAM rp11110 4016D PDF

    mc 4011

    Abstract: working of 4011 IC 220L3 cd 4011 be ic 4016 military part marking symbols jan 1n251 mc 4016 B ic
    Text: NIL SPECS IC|0DDD125 0002204 T | MIL-S-19500/188A AMENDMENT 1 20 September 1979 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPE JAN-1N251 This amendment forms a part o f M ilita r y S p e c ific a tio n MIL-S-19500/188A, dated 9 October 1963, and i s approved fo r use by a ll Departments and


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    MIL-S-19500/188A JAN-1N251 MIL-S-19500/188A, 000250e! MIL-S-19500/188A JAN-1N251. mc 4011 working of 4011 IC 220L3 cd 4011 be ic 4016 military part marking symbols jan 1n251 mc 4016 B ic PDF

    MC 4011 B

    Abstract: 1N3207
    Text: MIL SPECS I C | 0 0 G D 1 2 S DOOSSEb T |~~ INCH-POUND NOTICE OF VALIDATION MIL-S-19500/230C NOTICE 1 29 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, HIGH-CONDUCTANCE TYPE JAN - 1N3207 Military specification MIL-S-19500/230C, dated 12 February


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    00GD12S MIL-S-19500/23OC 1N3207 MIL-S-19500/230C, MIL-S-19500. MIL-S-19500 MC 4011 B 1N3207 PDF

    military part marking symbols jan

    Abstract: jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M
    Text: MIL SPECS iclooooias 0002300 L> f MIL-S-19500/2021 AMOEDMOrr 2 14 December 1964 supebsedS g D C K »T 1 3 December 1963 MILITARY SPECIFICATl« SEMICONDUCTOR DEVICES, DIODES, SILICCB, POWER BECTLFTEBS, TYPES JAN-1 N538, JAN-1#540 AMD JAI-1*547 This amendment forms a part of Military Specification MIL-S-19500/2C2A,


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    DDQQ125 MEL-S-19500/2D21 JAN-1N538, JAN-1N540 JA1-U547 MIL-S-19500/202A, MIL-S-19500 MEL-STD-750. MIL-S-19491 MIL-S-19500. military part marking symbols jan jan1n538 1n538 JAN1N540 1N538 JAN JAN-1N540M 1N538M in547 JAN-1N538 JAN-1N547M PDF

    ic 4016

    Abstract: 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 1n4373 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details
    Text: MIL SPECS 0000155 NOTICE OF VALIDATION 000253*4 T | INCH-POUND MIL-S-19500/195D NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, MICRO-MINIATURE, SWITCHING TYPE 1N3206 Military specification MIL-S-19500/195D, dated 6 August


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    0005S3M MIL-S-19500/195D 1N3206 MIL-S-19500/195D, QQ0012S MIL-S-19500. MIL-S-19500 1N4373 ic 4016 1N3206 DIODE PK IN 4001 MIL-STD-750 METHOD 2036 MIL-STD-750 METHOD 2036 CONDITION E MIL-S-19491 D253S IC 4011 details PDF

    INI615

    Abstract: 1Nu5 1N1614 Diodes IC 4011 4011 IC 1N4A NASA Group MC 4011 B 1N1614 1N1614R
    Text: MIL SPECS I C | 0 D D G 1 E S D0011S1 T | 7^0/-¡7 NOTICE OF VALIDATION INCH-POUND MIL-S-19500/162B NOTICE 1 26 August 1988 MILITARY SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, 1N4459R


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    MIL-S-19500/162B 1N1614, 1N1615, 1N1616, 1N4458, 1N4459, 1N1614R, 1N1615R, 1N1616R, 1N4458R, INI615 1Nu5 1N1614 Diodes IC 4011 4011 IC 1N4A NASA Group MC 4011 B 1N1614 1N1614R PDF

    C4016

    Abstract: c4018
    Text: MC4316 MC4016 MC4018 M OTOROLA PROGRAMMABLE MODULO-N COUNTERS PROGRAMMABLE MODULO-N COUNTERS T h e m o n o lit h ic d e v ic e s a re p ro g r a m m a b le , c a s c a d a b le , m o d u lo -N -co u n te rs. T h e M C 4316/4016 can be p ro g ra m m e d to


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    MC4316 MC4016 MC4018 MC4016 100N-, C4016 c4018 PDF

    sol 4011 be

    Abstract: 1N4866 in485b 1N483B 1N485B 1N486B 1N5194 1N5195 1N5196
    Text: MIL SPECS ICJDDD01ES QDDDÛ31 5 T T n c h -p o u n d T MIL-S-19500/118D AMENDMENT 1 28 April 1989 MILITARY SPECIFICATION S E M I C O N D U C T O R DE V I CE , DI OD E, S I L I C O N T Y PE S 1N 483B, 1 N 4 8 5 B , 1N 486B, 1N 5194, 1N 5195, 1 N 51 96 JAN, J A N T X , J A NT X V , AND J A N S


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    MIL-S-19500/118D 1N483B, 1N485B, 1N486B, 1N5194, 1N5195, 1N5196 MIL-S-19500/llfiD sol 4011 be 1N4866 in485b 1N483B 1N485B 1N486B 1N5194 1N5195 PDF

    1N561

    Abstract: 1N560 mil-s-19500 coding TNETC
    Text: MIL-S-19500/167B NAVY 19 Febru »*« iQfift s Op ë r s è d in g " M IL-S-19500/167A(NAVY) 11 May 1964 (See 6 .2 ) MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, DIODE, TYPE 1N560 AND 1N561 1. SCOPE 1.1 Scope. - This specification co v ers the detail requirem ents fo r 0.250 amp silicon power re c tifie rs


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    9500/167B MIL-S-19500/167A 1N560 1N561 MIL-S-19500, 1N561 mil-s-19500 coding TNETC PDF

    1N5595

    Abstract: JANKCA1N3595 M4E-1 1N3595US 1N3595 1N3595-1 1N3595UR-1 1N3595US-1 xr111 HP 4066
    Text: MIL SPECS 44E D • ÜQD0125 QG3M747 03b ■ MILS IINCH POUNDl |The documentation and process | ¡conversion measures necessary to [ |comply with this revision shall be | Icompleted by 23 Hay 1994_[_ MIL-S-19500/241F 23 February 1994 SUPERSEDING


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    G0DQ125 GG34747 MIL-S-19500/241F MIL-S-19500/241E 1N3595, 1N3595US, 1N3595UR, 1N3595-1, 1N3595UR-1, 1N3595US-1 1N5595 JANKCA1N3595 M4E-1 1N3595US 1N3595 1N3595-1 1N3595UR-1 xr111 HP 4066 PDF

    1N3190

    Abstract: 1N3189 1N3191 1N3189 JAN 1N3190 JAN 1N3190 JANTX 1N3191 JAN 155E MIL-S-19500 1N3189
    Text: MIL SPECS | 00DQ15S DODlOTb b I MIL-S-19500/155E NAVY NOTICE 1 25 September 1986 I NOTICE I |OF VALIDATION! MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENEERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES MIL-S-19500/155E(NAVY), dated 2 July 1974, has been reviewed & determined to be valid


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    00DD15S MIL-S-19500/155E 1N3189, 1N3190, 1N3191, 000D1HS 1QE17 MIL-S-19500/155D 1N3190 1N3189 1N3191 1N3189 JAN 1N3190 JAN 1N3190 JANTX 1N3191 JAN 155E MIL-S-19500 1N3189 PDF

    s13001

    Abstract: 11n120 IC 4011 pin DETAIL HA 4016 IC 4011 14 PIN 1N1202A 1N1204A 1N1206A 1N3671A 1N3673A
    Text: NIL S P E C S I I I I GOO IC • 0 0 0 0 1 2 5 O O E T S T S The documentation and process conversion measures necessaryto comply with this revision shallbe completed by 2 January 1990_ I I I | 4 Ii n c h - p o u n d T MIL-S-19500/260D 21 April 1989 SUPERSEDING-MIL-S-19500/260C


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    00001HS 1N1202A, 1N1204A, 1N1206A, 1N3671A 1N3673A MIL-S-19500. 1N1204A S13001 935A486-1 s13001 11n120 IC 4011 pin DETAIL HA 4016 IC 4011 14 PIN 1N1202A 1N1206A PDF

    ci 4011

    Abstract: 1N82A MC 4011 B 1N82AG 4011 ci 82AG CI 4016 mc 4011 ic319 TB diode
    Text: M I L - S - 1 9 5 0 0 /250B 5 A p ril 1971 S U PER SE D IN G »/itt . c ^i i o0sh;vu/ n n / na n A / P T i v i 26 D e c e m b e r 1963 M IL IT A R Y S P E C I F IC A T IO N SEM ICONDUCTOR DIODE, SILICON, UHF MIXER T Y P E 1NS2AG T h i s s p e c i f i c a t i o n is m a n d a t o r y f o r u s e by a l l D e p a r t ­


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    MIL-S-19500/250B 1N82AG 1006C, MIL-S-19500. MIL-S-19500 1N82A 1N82AG 1N82A. ci 4011 MC 4011 B 4011 ci 82AG CI 4016 mc 4011 ic319 TB diode PDF

    1N843

    Abstract: 1N682 1N683 1N863 CI 4011 SJ 2036 1N643 1N662 1N663 IN862
    Text: 26 August 1971 SUPERSEblNG M IL-S-18500/258B MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N643, 1N662 AND 1N663 This specification la m andatory for use by a ll D epart­ m ents and Agencies of the D epartm ent d befense?"


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    MIL-S-19500/256C MIL-S-10500/258B 1N643, 1N662 1N663 1N643 1N082 1N863 1N843 1N682 1N683 CI 4011 SJ 2036 1N663 IN862 PDF

    1h31

    Abstract: 5961 b sj IN3164 1N3164 1N3168 1N3170 1N3172 1N3174 1N3176 1N3177
    Text: MIL SPECS IC| GOODIES 00023^10 | MI L - S -19 b 0 0 / 2 1 1 r5 AMEv',-'7lfT ? 23 Fubrii^-v i3S5 SUPERS-L^C AMENDM^'-T 2 October MILITARY 2 i9 3 , SPECIFICATION S E M I C O N D U C T O R DE VICE, DIODE, S IL ICO N, POWER RE C T I F I E R T Y P E S 1 N 3 1 6 4 , 1 N 3 1 6 8 , IN 31 7 0 , 1 N 3 1 7 2 , 1 N 3 1 7 4 , 1 N 3 1 7 5 ,


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    0Q0012S -1Q600/ 1N3164, 1N3168, 1N3170, 1N3172, 1N3174, 1W3175. 1N3176, 1N3177, 1h31 5961 b sj IN3164 1N3164 1N3168 1N3170 1N3172 1N3174 1N3176 1N3177 PDF

    1N560

    Abstract: ic 4016 1N551 of ic 4016 1N561 IC 4011 D0DD12S 9SS diode
    Text: NIL SPECS I C | G D D D 1 2 S DGDllflT 2 | f - o - i - u MIL-S-19500/167B NAVY NOTICE 1 25 September 1986 I NOTICE I [OF VALIDATIONl MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, TYPE 1N560 AND 1N561 MIL-S-19500/167B(NAVY), dated 19 February 1968, has been reviewed & determined to be


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    QDDD12S MIL-S-19500/167B 1N560 1N561 MIL-S-19 500/167B( MIL-S-19500/167A ic 4016 1N551 of ic 4016 1N561 IC 4011 D0DD12S 9SS diode PDF

    1N3190

    Abstract: 1N3189 1N3191 1N3189 JAN IN3191 MARKING 34 MIL-S-19500 1N3189 44S3 diode VSF 200
    Text: u n -c.i0tnn/tctcikuvv\ i-i* â - - * j - a j j u u / i ^ 2 July 197 m_ SUPERSEDING M I L - S - 1 9 5 0 0 / 1 5 5 D NAVY 23 November 1973 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, GENERAL PURPOSE TYPES 1N3189, 1N3190, 1N3191, TX AND NON-TX TYPES


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    MIL-S-19500/155E MIL-S-19500/155D 1N3189, 1N3190, 1N3191, MIL-S-19500, MIL-S-19500. MIL-S-19500 59M-N591) 1N3190 1N3189 1N3191 1N3189 JAN IN3191 MARKING 34 MIL-S-19500 1N3189 44S3 diode VSF 200 PDF

    of IC 4511

    Abstract: CI 4011 IC 4011 1N5186 1N5187 1N5188 1N5190 DIODE PK IN 4001 origin semiconductor rectifier Scans-0016000
    Text: I^ lG O D D lS S MIL SPECS DDDl4G3fi 7 M IL-S-19500 '424 AMENDMENT 2 SUPERSEDING I AMENDMENT 1 16 January 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, FAST RECOVERY, POWER RECTIFIER TYPES TX AND NON-TX 1N5186, 1N5187, 1N5188, AND 1N5190


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    G00D15S MIL-S-19500 1N5186, 1N5187, 1N5188, 1N5190 MIL-S-19500/424, G00D12S MIL-S-19500/424 MIL-S-19500. of IC 4511 CI 4011 IC 4011 1N5186 1N5187 1N5188 1N5190 DIODE PK IN 4001 origin semiconductor rectifier Scans-0016000 PDF

    CI 4016

    Abstract: IC 4011 pin DETAIL 1N3287 h-MiLS sol 4011 be NSPE m1n code marking Scans-0015999 10 DC-1 diode
    Text: MIL SPECS 44E D □ □□DIES QQ32223 T « M I L S i recH-'poiifjp | MIL-S-19500/205B 11 JUNE 1990 SUPERSEDING-MIL-S-19500/205A 16 February 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIOOE, GERMANIUM, LOU LEVEL, FORWARD-VOLTAGE-REFERENCE TYPE 1N3287 JAN, JANTX, AND JANTXV


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    G0G012S QQ32223 MIL-S-19500/205B MIL-S-19500/205A 1N3287 MIL-S-19500. QQ32232 MIL-S-19500/2058 5961-U61-2) CI 4016 IC 4011 pin DETAIL h-MiLS sol 4011 be NSPE m1n code marking Scans-0015999 10 DC-1 diode PDF

    CP Clare RELAY hgp

    Abstract: clare mercury-wetted relay clare mercury relay data sheet power diode in3913 in3911 1N3909 1N3909A 1N3910 clare 953 relay 1N3911
    Text: MIL SPECS I I I I IC JDDDDIES DOISTT? 4 | The documentation and process I conversion measures necessary to I comply with this revision shall be I completed by 7 January 1 9 9 0 I TTKCÏÏ-POUND r MIL-S-19500/308B 7 April 1989 SliyERSEDJMG ~ MIL-S-1950Q/308A


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    1N3909, 1N3910, 1N3911, 1N3912, 1N3913, MIL-S-19500. CP Clare RELAY hgp clare mercury-wetted relay clare mercury relay data sheet power diode in3913 in3911 1N3909 1N3909A 1N3910 clare 953 relay 1N3911 PDF

    003S5

    Abstract: ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US 1N6641US
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 4 Nov 94. j j | 1 METR IC MIL-S-19500/609A 4 August 1994 SUPERSEDING MIL-S-19500/609 25 January 1993 M I L I T A R Y SP E C I F I C A T I O N SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING


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    HIL-S-19500/609A MIL-S-19500/609 1N6639, 1N6640, 1N6641, 1N6639US, 1N6640US, 1N6641US MIL-S-19500/231. 1N4150-1 003S5 ATI 1026 Sn 4011 1N6641 DIODE MARKING EJL 1N6639 1N6639US 1N6640 1N6640US PDF

    1N1124A

    Abstract: 1N1124RA 1N1126A 1N1126RA 1N1128A 1N1128RA 1N3649 1N3649R 1N3650
    Text: M IL-S-19500/104C 29 November 1965 SUPERSEDING M IL -S -19500/ 104B NAVY 17 August 1962 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER TYPES 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650 1N1124RA, 1N1126RA, 1N1128RA, 1N3649R, AND 1N3650R


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    MIL-S-19500/104C MIL-S-19500/104B 1N1124A, 1N1126A, 1N1128A, 1N3649, 1N3650 1N1124RA, 1N1126RA, 1N1128RA, 1N1124A 1N1124RA 1N1126A 1N1126RA 1N1128A 1N1128RA 1N3649 1N3649R PDF