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    onsemi MBRAF360T3G

    DIODE SCHOTTKY 60V 4A SMA-FL
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    Newark MBRAF360T3G Reel 5,000
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    Flip Electronics MBRAF360T3G 105,000
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    MBRAF360T3G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MBRAF360T3G On Semiconductor MBRAF360 - DIODE RECTIFIER DIODE, Rectifier Diode Original PDF

    MBRAF360T3G Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRAF360T3G MBRAF360/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRAF360T3G MBRAF360/D PDF

    Untitled

    Abstract: No abstract text available
    Text: MBRAF360T3G, NRVBAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRAF360T3G, NRVBAF360T3G MBRAF360/D PDF