MBR10H200CT C0 Search Results

MBR10H200CT C0 Price and Stock

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Taiwan Semiconductor MBR10H200CT C0 - Rail/Tube (Alt: MBR10H200CT C0)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	MBR10H200CT C0	Tube			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

MBR10H200CT C0 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MBR10H200CT C0G		Taiwan Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 200V 10A TO220AB		Original	PDF

MBR10H200CT C0 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
10H150CT Abstract: MBR10H100CT Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, MBR10HxxCT 10H150CT
Untitled Abstract: No abstract text available Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and	Original	PDF	MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059
Schottky Abstract: MBR10H200CT C0 Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and	Original	PDF	MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 JESD22-B102 D1308059 Schottky MBR10H200CT C0
Untitled Abstract: No abstract text available Text: MBR10H100CT - MBR10H200CT 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB
MBR10H100CT Abstract: No abstract text available Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB MIL-STD-750, MBR10HxxCT
Untitled Abstract: No abstract text available Text: MBR10H100CT thru MBR10H200CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and	Original	PDF	MBR10H100CT MBR10H200CT 2011/65/EU 2002/96/EC O-220AB AEC-Q101 22-B102 D1308059
Untitled Abstract: No abstract text available Text: MBR10H100CT - MBR10H200CT CREAT BY ART 10.0AMPS. Schottky Barrier Rectifiers TO-220AB Features Plastic material used carriers Underwriters Laboratory Classification 94V-0 Metal silicon junction, majority carrier conduction Low power loss, high efficiency	Original	PDF	MBR10H100CT MBR10H200CT O-220AB O-220AB
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor