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    Text: IGBT MODULE Spec.No.IGBT-SP-12013 R0 MBM800E17F Target Specification Silicon N-channel IGBT 1700V F version FEATURES ∗ Soft switching behavior & low conduction loss: Soft low-injection punch-through with trench gate IGBT. ∗ Low driving power: Low input capacitance advanced trench gate.


    Original     		IGBT-SP-12013 MBM800E17F MBM80rt, PDF