MBM29F016A Search Results

29f016a

Abstract: BM29F016A-90
Contextual Info: FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F016A-70'-90/-i2 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

Contextual Info: MBM29F016A-70/-90/-12 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29F016A SA28 SA29 SA30
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20844-2E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F016A-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29F016A SA28 SA29 SA30
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20844-4E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F016A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

Contextual Info: FLASH MEMORY 16M 2M x 8 BIT CMOS MBM29F016A 70 - /- 90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Pinout and software compatible with single-power supply Flash

Contextual Info: FLASH MEMORY CMOS 8 BIT MBM29F016A-90/-12 FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Pinout and software compatible with single-power supply Flash Superior inadvertent write protection

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29F016A SA28 SA29 SA30
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20844-4E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F016A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29F016A SA10 SA11 SA12 SA13 SA14 SA15 MBM29F016A-90PFTR
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20844-5E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F016A-70/-90/-12 • GENERAL DESCRIPTION The MBM29F016A is a 16 M-bit, 5.0 V-Only Flash memory organized as 2 M bytes of 8 bits each. The 2 M bytes of data is divided into 32 sectors of 64 K bytes for flexible erase capability. The 8 bit of data will appear on DQ7

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20844-2E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F016A-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

FPT-48P-M19

Abstract: MBM29F016A-70PFTN DS05 FPT-48P-M20 MBM29F016A MBM29F016A-70 MBM29F016A-90 SA10 SA11 SA12
Contextual Info: 富士通半導体デバイス DS05–20844–6 DATA SHEET フラッシュメモリ CMOS 16 M 2 M x 8 ビット MBM29F016A － 70/90 • 概要 MBM29F016A は， 16,777,216 bit の容量で，＋ 5 V 単一電源によるチップ一括消去およびセクタ単位での消去とバイト書

FPT-48P-M19

Abstract: FPT-48P-M20 MBM29F016A SA28 SA29 SA30
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20844-4E FLASH MEMORY CMOS 16M 2M x 8 BIT MBM29F016A-70/-90/-12 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

MBM29F016A-90PFTN

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

HD637B01VOP

Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Contextual Info: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ

AM29F040BU

Abstract: amd nor flash Toshiba NOR FLASH amd a6 M29F160D MBM29F400 am29lv Am29LV641DL AM29LV641DHL B 80
Contextual Info: Toshiba NOR Flash Compatibility Guide Toshiba America Electronic Components, Inc. Systems Application Engineering Group Randall Lopez, MTS Manager John Ahn, Sr. MTS Revision 1.0 September 2001 Prepared by: Systems Application Engineering Group TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

MBM29F800

Abstract: MBM29F400 MBM29F800BA-90PFTR-SFK MBM29LV800 MBM29LV650 mbm29f MBM29F033 MBM29LV650UE90TR-LE1 MBM29PL160TD MBM29F040C
Contextual Info: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 15, 2005 Advanced Change Notification No: Subject: 2548 Obsolescence of reverse-TSOP packages and specific speed grade of a product listed below Spansion LLC is announcing the retirement of reverse-TSOP packages in efforts to consolidate and

DS05

Abstract: FPT-48P-M19 FPT-48P-M20 MBM29F016A MBM29F016A-70 MBM29F016A-90 SA10 SA11 SA12 SA13
Contextual Info: スパンションフラッシュメモリ データシート 2003 年 9 月 本ドキュメントは , 現在アドバンスト・マイクロ・デバイス社と富士通株式会社とが提供しているスパンショ ンブランドのフラッシュメモリ製品の仕様を規定しています。ドキュメントには元来の仕様開発元が記載され

MSP14LV160

Abstract: MSP54LV100 MCF10P-128MS 70f3350GC 63a52 95f264k HY27US08121B MSP55LV128 MSP55lv512 fujitsu msp55lv512
Contextual Info: ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ９７０８ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ ＡＦ９７０９Ｂ ＦＬＡＳＨ ＰＲＯＧＲＡＭＭＥＲ

1mx8

Abstract: BM29F800BA-90 flash memory 5V MBM29F800TA-90
Contextual Info: Flash Memory 2 I Flash Memory (5V ONLY) Ta= -20°C to +70°C Organization (W xb) Part Number MBM29F080-90 Access Time* max. (ns) 90 Power Consumption Cycle max. (mW) Time min. (ns) Operating Standby Mode (CMOS level) MBM29F080-12 120 MBM29F800T-12 MBM29F800B-12

electronique package

Abstract: electronique cdx3 fujitsu Flash Memory Miniature Card AMD PCMCIA linear Flash Memory Card 2M - FLASH PCMCIA linear card MB98A81183-15 1M - FLASH PCMCIA linear card PCMCIA SRAM Memory Card 512k 5v eeprom Memory 32Mbit
Contextual Info: FLASH OVERVIEW 16 18/9/98 4:12 pm Page 1 PRODUCT OVERVIEW FLASH MEMORY Fujitsu Flash Memories The Complete Package FLASH OVERVIEW 16 18/9/98 4:12 pm Page 2 Flash Memory Copyright 1998 Fujitsu Limited Tokyo, Japan, Fujitsu Mikroelektronik GmbH, Fujitsu Microelectronics Ltd and Fujitsu

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20844-4E FLASH MEMORY CMOS 16M 2M X 8 BIT M B M 2 9 F 0 1 6 A -7 0 /- 9 0 /- 1 2 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands