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    MBE REGULATOR Search Results

    MBE REGULATOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    MBE REGULATOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    434mhz ask transmitter and receiver module

    Abstract: RF MODULE 434Mhz PMA7110 434mhz rf transmitter and receiver module rohs rf module 434mhz EXS00A CS 3 bit magnitude comparator A 434 RF Receiver TRANSMITTER PAIR circuit diagram of 4 channel 315 rf transmitter 8051 microcontroller data sheet
    Text: TargetDatasheet.book Page 1 Monday, April 28, 2008 11:16 AM P rel imin ar y D at a S he e t, V 0. 9 , A pr il 20 0 8 PMA7110 RF T r an smitt er I C w i th e mbe dd ed 80 51 Micr ocon tr olle r, LF 125 kHz AS K Re ceive r and F SK/ ASK 31 5/ 434 /8 68 /91 5 MHz


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    PDF PMA7110 PMA5110 P-TSSOP-38 TSSOP38 434mhz ask transmitter and receiver module RF MODULE 434Mhz PMA7110 434mhz rf transmitter and receiver module rohs rf module 434mhz EXS00A CS 3 bit magnitude comparator A 434 RF Receiver TRANSMITTER PAIR circuit diagram of 4 channel 315 rf transmitter 8051 microcontroller data sheet

    Untitled

    Abstract: No abstract text available
    Text: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


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    PDF SMV512K32-SP SLVSA21H 16-Mb 20-ns 5e-17

    Untitled

    Abstract: No abstract text available
    Text: SMV512K32-SP www.ti.com SLVSA21H – JUNE 2011 – REVISED JULY 2013 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


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    PDF SMV512K32-SP SLVSA21H 16-Mb 20-ns 5e-17

    marking e1Z

    Abstract: SRAM edac SMV512K32-SP SMV512K32 5962-1123701VXC
    Text: SMV512K32-SP SLVSA21E – JUNE 2011 – REVISED DECEMBER 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


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    PDF SMV512K32-SP SLVSA21E 16-Mb 20-ns 5e-17 398/clocks marking e1Z SRAM edac SMV512K32-SP SMV512K32 5962-1123701VXC

    SMV512K32-SP

    Abstract: No abstract text available
    Text: SMV512K32-SP SLVSA21C – JUNE 2011 – REVISED OCTOBER 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


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    PDF SMV512K32-SP SLVSA21C 16-Mb 20-ns 5e-17 SMV512K32-SP

    Untitled

    Abstract: No abstract text available
    Text: SMV512K32-SP www.ti.com SLVSA21G – JUNE 2011 – REVISED APRIL 2012 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


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    PDF SMV512K32-SP SLVSA21G 16-Mb 20-ns 5e-17om

    Untitled

    Abstract: No abstract text available
    Text: SMV512K32-SP SLVSA21B – JUNE 2011 – REVISED JULY 2011 www.ti.com 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES • 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


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    PDF SMV512K32-SP SLVSA21B 16-Mb 20-ns 5e-17

    Untitled

    Abstract: No abstract text available
    Text: SMV512K32-SP www.ti.com SLVSA21I – JUNE 2011 – REVISED JANUARY 2014 16-Mb RADIATION-HARDENED SRAM Check for Samples: SMV512K32-SP FEATURES 1 • • • • • 20-ns Read, 13.8-ns Write Through Maximum Access Time Functionally Compatible With Commercial


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    PDF SMV512K32-SP SLVSA21I 16-Mb 20-ns 5e-17

    HBT transistor

    Abstract: trw rf transistor trw 131* RF POWER TRANSISTOR trw RF POWER TRANSISTOR HBT transistor GaAs TA0025
    Text: TA0025  TA0025 Heterojunction Bipolar Transistor - Reliable, High Quality Solutions at a Very Low Cost                     Yet even with such high acceptance, there are still some lingering perceived disadvantages associated


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    PDF TA0025 1980s HBT transistor trw rf transistor trw 131* RF POWER TRANSISTOR trw RF POWER TRANSISTOR HBT transistor GaAs TA0025

    UT8ER512K32

    Abstract: SRAM edac UT8ER512K32S mbe regulator RAM SEU RAM EDAC SEU
    Text: Design Information Fact Sheet UT8ER512K32 Monolithic 16M RadHard SRAM INTRODUCTION FEATURES ‰ 20ns read, 10ns write maximum access times ‰ Functionally compatible with traditional 512K x 32 SRAM devices ‰ CMOS compatible inputs and output levels, three-state


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    PDF UT8ER512K32 100Krad SRAM edac UT8ER512K32S mbe regulator RAM SEU RAM EDAC SEU

    SKE 4 F 2/06

    Abstract: bcd to seven segment circuit diagram Standish LCD 3 1/2 digit Standish LCD 4 1/2 digit Standish LCD STANDISH LCD DISPLAYS wristwatch lcd LCD3906 hamlin lcd uPD75X
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    Untitled

    Abstract: No abstract text available
    Text: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description


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    PDF 94991B IRFZ48NPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description


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    PDF 94965B IRF1010EPbF O-220

    Untitled

    Abstract: No abstract text available
    Text: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description


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    PDF 94991B IRFZ48NPbF O-220

    diode marking dmx

    Abstract: forward smps 12v
    Text: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits


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    PDF 94084B IRFB17N50L O-220AB diode marking dmx forward smps 12v

    irfb17n50l

    Abstract: No abstract text available
    Text: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits


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    PDF 94084B IRFB17N50L 12-Mar-07 irfb17n50l

    Untitled

    Abstract: No abstract text available
    Text: PD - 94084B IRFB17N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. ID 0.28Ω 16A 500V Features and Benefits


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    PDF 94084B IRFB17N50L O-220AB 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: USB2250/50i/51/51i Ultra Fast USB 2.0 Multi-Slot Flash Media Controller PRODUCT FEATURES Data Brief General Description The SMSC USB2250/50i/51/51i is a USB 2.0 compliant, high speed Mass Storage Class Peripheral Controller intended for reading and writing to more than 24 popular


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    PDF USB2250/50i/51/51i USB2250/50i/51/51i 35MB/s 128-pin O-128-V FP-14x14x1 14x14x1

    irf 44 n

    Abstract: 1329B IRLIZ34N IRLZ34N
    Text: PD - 9.1329B IRLIZ34N HEXFET Power MOSFET l l l l l l Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.035Ω G Description


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    PDF 1329B IRLIZ34N O-220 irf 44 n 1329B IRLIZ34N IRLZ34N

    IRFIZ24N

    Abstract: 1501a IRFZ24N irf 480 irf 044 mosfet
    Text: PD - 9.1501A IRFIZ24N HEXFET Power MOSFET Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to Lead Creepage Dist. = 4.8mm l Fully Avalanche Rated Description l D l VDSS = 55V RDS on = 0.07Ω G Fifth Generation HEXFETs from International Rectifier


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    PDF IRFIZ24N O-220 IRFIZ24N 1501a IRFZ24N irf 480 irf 044 mosfet

    Untitled

    Abstract: No abstract text available
    Text: HbE D b3b?554 DORifiT? 1 « n O T b 1 z3^~0 Í MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA Édbà DMO hum MHM8N20HX, HXV (N-Channel) MHM8P20HX, HXV (P-Channel) Power Field-Effect Transistors Discrete Military Operation N-Channel/F-Channel Enhancement-Mode Complementary


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    PDF MHM8N20HX, MHM8P20HX,

    regulator 7805

    Abstract: voltage regulator 7805 Transistor t3 smd motorola 7805 smd REGULATOR motorola IC 7805 motorola 7805 7805 regulator smd REGULATOR IC 7805 SMD motorola diode smd 7805 motorola
    Text: MOTOROLA SC XSTRS/R F 4bE D • b3b7254 GD^Slfl? ? ■ MOTb T '^ - O S MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP300^ The RF Line U H F P o w e r T ra n sisto r The TP3004 is designed for 900 M Hz bases stations in both analog and digital applica­ tions. It incorporates high value emitter ballast resistors, gold metallizations and offers a


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    PDF b3b7254 TP3004 TP300^ TP3004 T-33-05 regulator 7805 voltage regulator 7805 Transistor t3 smd motorola 7805 smd REGULATOR motorola IC 7805 motorola 7805 7805 regulator smd REGULATOR IC 7805 SMD motorola diode smd 7805 motorola

    vk 17

    Abstract: equivalent transistor T 250 TIP 141 hosiden KUC2123 mc34018 2N2222A motorola transistor data MC34014 hosiden amplified KUC2123 Hosiden MC145412 Q301
    Text: MOTOROLA SC TELEC O M 4b E » H b 3 b 7 2 5 3 Q0ÔS717 ñ H i MOTS MOTOROLA i s I SEMICONDUCTOR - is * TECHNICAL DATA MC34014 S p e c ific a t io n s a n d A p p lic a t io n s In fo r m a t io n TELEPHONE SPEECH NETWORK WITH DIALER INTERFACE TELEPH O N E SPEECH N ETW ORK


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    PDF MC34014 18-pin 20-pin vk 17 equivalent transistor T 250 TIP 141 hosiden KUC2123 mc34018 2N2222A motorola transistor data hosiden amplified KUC2123 Hosiden MC145412 Q301

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1507 International IOR Rectifier PRELIMINARY IR F R /U 9 1 2 0 N HEXFET Power MOSFET Ultra Low On-Resistance P-Channel Surface Mount IRFR9120N Straight Lead (IRFU9120N) Advanced Process Technology Fast Switching Fully Avalanche Rated V dss = -100V


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    PDF IRFR9120N) IRFU9120N) -100V