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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00021-2v0-E FRAM MB85RC128A MB85RC128A is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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NP501-00021-2v0-E
MB85RC128A
MB85RC128A
128K-bits
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–9E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC128
MB85RC128
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–5E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for
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MB85RC128
MB85RC128
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00018-3v0-E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128A • DESCRIPTION The MB85RC128A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00018-3v0-E
MB85RC128A
MB85RC128A
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-2E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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NP05-13110-2E
MB85RC128
MB85RC128
128K-bits
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13110-2E Memory FRAM CMOS 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming
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DS05-13110-2E
MB85RC128
MB85RC128
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MB85R
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13110-1E Memory FRAM CMOS 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming
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DS05-13110-1E
MB85RC128
MB85RC128
MB85R
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RC128A
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00018-1v0-E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128A • DESCRIPTION The MB85RC128A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00018-1v0-E
MB85RC128A
MB85RC128A
RC128A
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–6E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC128
MB85RC128
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–7E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC128
MB85RC128
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–4E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for
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MB85RC128
MB85RC128
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–8E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC128
MB85RC128
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-4E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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NP05-13110-4E
MB85RC128
MB85RC128
128K-bits
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–3E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is a FRAM (Ferroelectric Random Access Memory) Stand-Alone chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for
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MB85RC128
MB85RC128
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Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–10E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC128
MB85RC128
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00018-2v0-E Memory FRAM 128 K 16 K 8 Bit I2C MB85RC128A • DESCRIPTION The MB85RC128A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00018-2v0-E
MB85RC128A
MB85RC128A
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR FACT SHEET NP05-13110-6E FRAM MB85RC128 MB85RC128 is a 128K-bits FRAM LSI with serial interface I2C , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory,
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NP05-13110-6E
MB85RC128
MB85RC128
128K-bits
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–9E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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MB85RC128
MB85RC128
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