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    MB 10F Search Results

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    MB 10F Price and Stock

    Nextgen Components MB10F

    BRIDGE RECT 1PHASE 1KV 1A MBF
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    DigiKey MB10F Reel 10,000
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    ROHM Semiconductor EMB10FHAT2R

    PNP+PNP DIGITAL TRANSISTOR (CORR
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    EMB10FHAT2R Cut Tape 1
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    Newark EMB10FHAT2R Cut Tape 5
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    CoreStaff Co Ltd EMB10FHAT2R 8,000
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    EMB10FHAT2R 8,000
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    Vyrian EMB10FHAT2R 5,729
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    Advantech Co Ltd BB-C6UMB10FBG

    CABLE MOD 8P8C PLUG TO PLUG 10'
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    Advantech Co Ltd BB-C6UMB10FRD

    CABLE MOD 8P8C PLUG TO PLUG 10'
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    Advantech Co Ltd BB-C6UMB10FBL

    CABLE MOD 8P8C PLUG TO PLUG 10'
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    MB 10F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MB10F Unknown Bridge Rectifier MBF 1KV 1A Original PDF
    MB10F-13 Diodes Incorporated Discrete Semiconductor Products - Diodes - Bridge Rectifiers - BRIDGE RECT 1PHASE 1KV 800MA MBF Original PDF
    MB10FTR SMC Diode Solutions Discrete Semiconductor Products - Diodes - Bridge Rectifiers - BRIDGE RECT 1PHASE 1KV 500MA MBF Original PDF

    MB 10F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor c124 esn

    Abstract: transistor SA235 S71NS064NA0
    Text: S71NS128NA0/S71NS064NA0 Based MCPs Stacked Multi-Chip Product MCP MirrorBit Flash Memory and PSRAM 128 Mb (8M x 16-bit) and 64 Mb (4M x 16-Bit), 110 nm CMOS 1.8 Volt-only, Multiplexed, Simultaneous Read/ Write, Burst Mode Flash Memory with 16 Mb (1M x 16-Bit) PSRAM


    Original     		S71NS128NA0/S71NS064NA0 16-bit) S71NS128 064NA0 transistor c124 esn transistor SA235 S71NS064NA0 PDF

    ZL50012QCG1

    Abstract: MS-026 ZL50012 STO10
    Text: ZL50012 Flexible 512-ch Digital Switch Data Sheet Features • April 2006 512 channel x 512 channel non-blocking switch at 2.048 Mb/s, 4.096 Mb/s or 8.192 Mb/s operation • Rate conversion between the ST-BUS inputs and ST-BUS outputs • Per-stream ST-BUS input with data rate selection


    Original     		ZL50012 512-ch ZL50012/QCC ZL50012/GDC ZL50012QCG1 ZL50012GDG2 ZL50012QCG1 MS-026 ZL50012 STO10 PDF

    MS-026

    Abstract: ZL50012
    Text: ZL50012 Flexible 512-ch Digital Switch Data Sheet Features July 2004 • 512 channel x 512 channel non-blocking switch at 2.048 Mb/s, 4.096 Mb/s or 8.192 Mb/s operation • Rate conversion between the ST-BUS inputs and ST-BUS outputs • Per-stream ST-BUS input with data rate selection


    Original     		ZL50012 512-ch ZL50012/QCC ZL50012/GDC MS-026 ZL50012 PDF

    BC1211

    Abstract: No abstract text available
    Text: ZL50012 Flexible 512-ch Digital Switch Data Sheet Features July 2005 • 512 channel x 512 channel non-blocking switch at 2.048 Mb/s, 4.096 Mb/s or 8.192 Mb/s operation • Rate conversion between the ST-BUS inputs and ST-BUS outputs • Per-stream ST-BUS input with data rate selection


    Original     		ZL50012 512-ch BC1211 PDF

    Untitled

    Abstract: No abstract text available
    Text: PROGRAMMABLE FU JITSU SCHOTTK Y 16384-BIT MB 7134E-W READ ONLY MEMORY November 1985 Edition 1.0 SCHOTTKY 16384-BIT DEAP PROM 4096 WORDS x 4 BITS This Fujitsu MB 7T34-W is high speed Schottky TT L electrically field pro­ grammable read only memory organized as 4096 words by 4 bits. With threestate outpus on the MB 7134-W, memory expansion is simple.


    OCR Scan     		16384-BIT 7134E-W 7T34-W 134-W, DIP-20C-C03 8C-A01) 28-PAD LCC-28C-A02) PDF

    DS21291C

    Abstract: rxbf
    Text: MCP2510 Stand-Alone CAN Controller with SPI Interface FEATURES DESCRIPTION • Implements Full CAN V2.0A and V2.0B at 1 Mb/s - 0 - 8 byte message length - Standard and extended data frames - Programmable bit rate up to 1 Mb/s - Support for remote frames


    Original     		MCP2510 DS21291C-page DS21291C rxbf PDF

    DS30000

    Abstract: ID10 MCP2510
    Text: MCP2510 Stand-Alone CAN Controller with SPI Interface FEATURES DESCRIPTION • Implements Full CAN V2.0A and V2.0B at 1 Mb/s - 0 - 8 byte message length - Standard and extended data frames - Programmable bit rate up to 1 Mb/s - Support for remote frames


    Original     		MCP2510 DS21291C-page DS30000 ID10 MCP2510 PDF

    ID10

    Abstract: MCP2510 DS30000 B-701
    Text: MCP2510 Stand-Alone CAN Controller with SPI Interface FEATURES DESCRIPTION • Implements Full CAN V2.0A and V2.0B at 1 Mb/s - 0 - 8 byte message length - Standard and extended data frames - Programmable bit rate up to 1 Mb/s - Support for remote frames


    Original     		MCP2510 DS21291C-page ID10 MCP2510 DS30000 B-701 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1316V18 CY7C1318V18 CY7C1320V18 PRELIMINARY 18-Mb DDR -II SRAM 2-Word Burst Architecture Features Functional Description • 18-Mb density 2M x 8, 1M x 18, 512K x 36 • 250-MHz clock for high bandwidth • 2-Word burst for reducing address bus frequency


    Original     		CY7C1316V18 CY7C1318V18 CY7C1320V18 18-Mb 250-MHz 13x15 pit18/CY7C1320V18 300-MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: M MCP2510 Stand-Alone CAN Controller with SPIΤΜ Interface FEATURES DESCRIPTION • Implements Full CAN V2.0A and V2.0B at 1 Mb/s - 0 - 8 byte message length - Standard and extended data frames - Programmable bit rate up to 1 Mb/s - Support for remote frames


    Original     		MCP2510 MCP2510 DS21291B-page PDF

    Untitled

    Abstract: No abstract text available
    Text: M MCP2510 Stand-Alone CAN Controller with SPIΤΜ Interface FEATURES DESCRIPTION • Implements Full CAN V2.0A and V2.0B at 1 Mb/s - 0 - 8 byte message length - Standard and extended data frames - Programmable bit rate up to 1 Mb/s - Support for remote frames


    Original     		MCP2510 MCP2510 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C1317V18 CY7C1319V18 CY7C1321V18 PRELIMINARY 18-Mb DDR -II SRAM 4-Word Burst Architecture Features Functional Description • 18-Mb density 2M x 8, 1M x 18, 512K x 36 • 250-MHz clock for high bandwidth • 4-Word burst for reducing address bus frequency


    Original     		CY7C1317V18 CY7C1319V18 CY7C1321V18 18-Mb 250-MHz p19V18/CY7C1321V18 BB165D BB165A PDF

    CY7C1317V18

    Abstract: CY7C1319V18 CY7C1321V18
    Text: CY7C1317V18 CY7C1319V18 CY7C1321V18 PRELIMINARY 18-Mb DDR-II SRAM Four-word Burst Architecture Features Functional Description • 18-Mb density 2M x 8, 1M x 18, 512K x 36 — Supports concurrent transactions • 250-MHz clock for high bandwidth • Four-word burst for reducing address bus frequency


    Original     		CY7C1317V18 CY7C1319V18 CY7C1321V18 18-Mb 250-MHz CY7C1317V18/CY7C1319V18/CY7C1321V18 CY7C1317V18 CY7C1319V18 CY7C1321V18 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CY7C1323V25 18-Mb 4-Word Burst SRAM with DDR -I Architecture Features Functional Description • 18 Mb Density 512Kb x 36 • 167 MHz Clock for High Bandwidth • 4-Word Burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at


    Original     		CY7C1323V25 18-Mb 512Kb 11x15 BB165D BB165A. PDF

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS T73> .D 374T7bS 0005121 T • T-75-37-05 F U JIT SU April 1987 Edition 1.0 SERIAL INTERFACE ADAPTER FOR DSP SIA The Fujitsu MB 87069 Is a dedloated Serial Interface Adapter (SIA) that provides cost-effeotlve Interface support between the Fujitsu MB 8764


    OCR Scan     		374T7bS T-75-37-05 ope7937 64-LEA PDF

    56-PIN

    Abstract: LH28F320S3TD-L10 TSOP056-P-1420
    Text: LH28F320S3TD-L10 LH28F320S3TD-L10 32 M-bit 2 MB x 8/1 MB x 16 x 2-Bank Smart 3 Dual Work Flash Memory DESCRIPTION The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide


    Original     		LH28F320S3TD-L10 LH28F320S3TD-L10 56-pin TSOP056-P-1420) TSOP056-P-1420 PDF

    CY7C1392V18

    Abstract: CY7C1393V18 CY7C1394V18 159m4
    Text: CY7C1392V18 CY7C1393V18 CY7C1394V18 PRELIMINARY 18-Mb DDR-II SIO SRAM Two-word Burst Architecture Features Functional Description • 18-Mb density 2M x 8, 1M x 18, 512K x 36 — Supports concurrent transactions • 250-MHz clock for high bandwidth • Two-word burst for reducing address bus frequency


    Original     		CY7C1392V18 CY7C1393V18 CY7C1394V18 18-Mb 250-MHz CY7C1392V18/CY7C1393V18/CY7C1394V18 CY7C1392V18 CY7C1393V18 CY7C1394V18 159m4 PDF

    gsm internet modem circuit

    Abstract: S3H-L TSOP056-P-1420
    Text: LH28F160S3-L/S3H-L LH28F160S3-L/S3H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F16S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide


    Original     		LH28F160S3-L/S3H-L LH28F16S3-L/S3H-L FBGA064-P-0811) SDIP064-P-0750) gsm internet modem circuit S3H-L TSOP056-P-1420 PDF

    TSOP056-P-1420

    Abstract: LH28F160S5X-L70 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70
    Text: LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide


    Original     		LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L FBGA064-P-0811) SDIP064-P-0750) TSOP056-P-1420 LH28F160S5X-L70 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70 PDF

    CSP-64

    Abstract: TSOP056-P-1420 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70
    Text: LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION The LH28F160S5-L/S5H-L flash memories with Smart 5 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide


    Original     		LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L CSP-64 TSOP056-P-1420 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70 PDF

    Untitled

    Abstract: No abstract text available
    Text: 28F016SV • SmartVoltage Technology — User-Selectable 3.3V or 5V Vcc — User-Selectable 5V or 12V VPP ■ 65 ns Access Time ■ 1 Million Erase Cycles per Block ■ 30.8 MB/sec Burst Write Transfer Rate ■ 0.48 MB/sec Sustainable Write Transfer Rate ■ Configurable x8 or x16 Operation


    OCR Scan     		28F016SV 56-Lead 28F016SA, 28F008SA 28F008SA 28F016SV 16-Mbit PDF

    A12E1

    Abstract: 11DQ3 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70 TSOP056-P-1420 11DQ5
    Text: SHARP LH28F160S5-L/S5H-L LH28F160S5-L7S5H-L 16 M-bit 2 MB x 8/1 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION • High performance read access time The LH 28F160S 5-L/S5H -L flash m em ories with Sm art 5 technology are high-density, low-cost,


    OCR Scan     		LH28F160S5-L/S5H-L LH28F160S5-L/S5H-L SDIP064-P-0750) SSOP056-P-0600) FBGA064-P-0811) 04TYP. IL0-46 A12E1 11DQ3 LH28F160S5H-L70 LH28F160S5-L LH28F160S5-L70 TSOP056-P-1420 11DQ5 PDF

    A18E

    Abstract: 56-PIN LH28F320S3H-L LH28F320S3-L A17OI
    Text: LH28F320S3-L/S3H-L PRELIMINARY SHARP LH28F320S3-L/S3H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 3 Flash Memories (Fast Programming) DESCRIPTION The LH28F320S3-L/S3H-L flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a wide


    OCR Scan     		F320S3- LH28F320S3-L/S3H-L LH28F320S3-L/S3H-L H28F320S3XX-L11 LH28F320S3XX-L14 SSOP056-P-0600) FBGA080/064-P-0818) A18E 56-PIN LH28F320S3H-L LH28F320S3-L A17OI PDF

    3YWA

    Abstract: 56-PIN
    Text: LH28F320S5-L/S5H-L LH28F320S5-L/S5H-L 32 M-bit 4 MB x 8/2 MB x 16 Smart 5 Flash Memories (Fast Programming) DESCRIPTION A R Y • High performance read access time LH28F320S5-L90/S5H-L90 – 90 ns (5.0±0.25 V)/100 ns (5.0±0.5 V) LH28F320S5-L12/S5H-L12


    Original     		LH28F320S5-L/S5H-L LH28F320S5-L90/S5H-L90 LH28F320S5-L12/S5H-L12 3YWA 56-PIN PDF