MAY93 Search Results
MAY93 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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HYM5361
Abstract: HYM536100AMG hym536100
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36-bit HYM536100Ais HY514400A HY531000A HYM536100AM/ALM HYM536100AMG/ALMG 1CC04-00-MAYW HYM536100A 1CC04-00-MAY93 HYM5361 HYM536100AMG hym536100 | |
Contextual Info: •HYUNDAI HYM581000B Series SEMICONDUCTOR 1M x 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-brt Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin giass-epoxy printed circuit board. 0.2^/F decoupling capacitor is mounted for each DRAM. |
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HYM581000B HY514400A HYM581000BM/BLM 1BB0fr40-M 1BB05-00-M 1BB05-00-MAY93 | |
D0200Contextual Info: " H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 6 1 0 S e r ie s 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581610 is a 16M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY5117100 in 24/28 pin SOJ or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling capacitor is mounted for |
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HYM581610 HY5117100 HYM581610M/LM/TM/LTM HYM581610TM/LTM 251MAX. 1BD02-00-MA HYM581610M HYM581610LM HYM581610TM D0200 | |
HYM536200AM
Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
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HYM536200A 36-blt 36-bit HY514400A HY531000A HYM536200AM/ALM HYM536200AMG/ALMG 11CD04-00-MAY93 36200A HYM536200AM WE005 HYM536200Aibm pc 700M/ALM | |
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581600 Series 16M X 8-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581600 is a 16M x 8-bit Fast page mode C M O S DRAM module consisting of eight HY5116100 in 24/28 pin SO J or TSOP-II on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling capacitor is mounted for |
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HYM581600 HY5116100 HYM581600M/LM/TM/LTM 1BD01-00-MAY93 HYM58160 HYM581600TM/LTM 251MAX 01-00-M | |
HYM591000AM
Abstract: bb04 HY531000
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HYM591000A HY514400 HY531000 HYM591000AM tWCHf31) BB04-20-M 04-20-M bb04 | |
Contextual Info: ‘H Y U N D A I SEMICONDUCTOR H Y M 536200 Series 2M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536200 is a 2M x 36-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400 20/26 pin SOJ and eight HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.2^«F decoupling |
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36-bit HYM536200 HY514400 HY531000 HYM536200M HYM536200MG 1CD02-20-MAY93 4b750Ã | |
Contextual Info: HYUNDAI HYM591000C Series SEMICONDUCTOR 1M x 9-blt CMOS DRAM MODULE DESCRIPTION The HYM591000C Is a 1M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY531000A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM. |
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HYM591000C HY531000A 22/iF HYM591OOOCM/CLM 1BB08-10-MAYW 4b750Ã 07IV7B1 | |
HYM591000Contextual Info: HYUNDAI H Y M 5 9 1 0 0 0 A SEMICONDUCTOR S e r ie s 1M x 9-bit CMOS DRAM MODULE DESCRIPTION The HYM591000A is a 1M x 9-bit Fast page mode CM O S DRAM module consisting of two HY514400 and one HY531000 in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted |
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HYM591000A HY514400 HY531000 HYM591000AM 0177G 1BB04-20-M 0QG1771 HYM591000 | |
PI-38Contextual Info: •HYUNDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J and one HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling |
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HYM594000B HY5117400 HY514100A HYM594000BM/BLM 1BC0e-00 MAY93 53-BEFORE-H 1BC06-00 PI-38 | |
HYM532410M
Abstract: HYM532410 HYM53241
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HYM532410 32-bit 32-blt HY5117400 HYM53241OM/LM HYM53241OMG/LMG outp03-00-MAY93 1CE03-00-MAY93 HYM532410M HYM53241 | |
HYM532200AM
Abstract: L76 H hym532200A
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HYM532200A 32-bit HY514400A 22ftF HYM532200AM/ALM HYM532200AMG/ALMG 1CD03-00-MAY93 HYM532200AM L76 H | |
Contextual Info: 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 19 6 5 4 7 3 PROJECTION RELEASED BY AMP FOR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI ST LOC 19 AD RESERVED. 39 REV I 5 I0N5 ZONE LTR DESCRIPTION DATE K REV PER 0 G 2 1 - 0 0 4 8 - 9 9 |
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0G21-0048-99 0G3C-53-00 01MAY99 006MAX- 50ALE 0B50LETE UNLE55 09-FEB-00 amp35397 /home/amp35397/edmmod | |
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM581000 Series 1M X 8-bit CMOS DRAM MODULE DESCRIPTION The HYM581000 is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY531000 In 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22pF decoupling capacitor is mounted for each DRAM. |
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HYM581000 HY531000 HYM581000M 1BB01-11-MAY93 4L750afl HYM581000M 1BB01-11-M HYM581000A | |
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Contextual Info: HY U NDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of two HY5117400 in 24/28 pin SOJ and one HY514100A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22|iF decoupling |
OCR Scan |
HYM594000B HY5117400 HY514100A HYM594000BM/BLM compa-MAY93 DD16B2 4k750flA 0Q01flfl3 |