MAXIMUM IDSS FET Search Results

SPF2086TK

Contextual Info: ô ta, îîYices -ï SPF-2086TK 0.1-4 GHz Low Noise PHEMT GaAs FET Absolute Maximum Ratings at 25C Parameter Absolute Maximum Drain-Source Voltage Vds +7V Gate-Source Voltage (Vgs) -7V Drain Current (Ids) Idss Forward Gate Current (Igst) 10mA RF Input Power (Pin)

2sk1060

Abstract: 2SK type transistor 2sk transistor 2sk193 2SK105 Datasheet transistor 2sk162 transistor SST 250 2SK1794 2SK104 2SK2234
Contextual Info: Transistor Field Effect Transistor Small Signal FET • 2SK type Junction type Part number Absolute maximum ratings (TA = 25 °C) Package Electrical characteristics (TA = 25 °C) VGDO (V) ID (mA) PT (mW) |Yfs1| Applications IDSS (mA) (ms) TYP. 2.5 TYP. 2SK104

fp31ff

Abstract: transistor 131 349 2110 FP31QF FP31QF-F FP31QF-PCB1900 FP31QF-PCB2140 FP31QF-PCB900 JESD22-A114 QFN-6x6 rohm
Contextual Info: FP31QF The Communications Edge TM Product Information 2-Watt HFET Applications • • • • • • Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain

2SK2701A

Abstract: FKv550n 2sk3003 2SK3801 2SK3199 fkv575
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)

FKV550N

Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)

fkp*253

Abstract: fkv550n FKV550T FKP280 2SK2710a fkv550
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V 2SK1179 500 VGSS (V) ID (A) ±20 ±8.5 ID (pulse) (A) PD (W) ±34 85 IGSS EAS (mJ) 400 (nA) max ±500 VTH IDSS Conditions VGS (V) ±20 (µA) min max Conditions VDS

2sk30

Abstract: FKv550n 2SK3003 2SK3199 2SK2778
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number 2SK2420 VDSS VGSS ID ID pulse PD (V) (V) (A) (A) (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V)

FKv550n

Abstract: FKV550T 2SK2848 FKP330C 2SK3004 FKP250A 2SK3710A 2SK3003 2SK2701A 2SK3711
Contextual Info: 2-2 MOS FETs Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions VDS ID (V) (µA)

TRANSISTOR 187

Abstract: fkv550 2sk2943 2SK1185 2SK3460 2SK2710a 2SK3724
Contextual Info: 2-2 MOS FET Specifications List by Part Number Absolute Maximum Ratings Part Number VDSS V VGSS (V) ID (A) ID (pulse) (A) PD (W) IGSS EAS (mJ) (nA) max VTH IDSS Conditions VGS (V) (µA) min max Conditions VDS (V) (V) min max Conditions ID VDS (V) (µA) −60

ultra low igss pA mosfet

Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
Contextual Info: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)

Contextual Info: MwT-10 40 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y M 5.5 dB GAIN IN 18-26.5 GHz BALANCED CIRCUIT 4.5 dB NF IN 18-26.5 GHz BALANCED CIRCUIT 0.3 MICRON REFRACTORY METAL7GOLD GATE DIAMOND-UKE CARBON DLC PASSIVATION APPLICATIONS UP TO 40 GHz

Contextual Info: TF218TH Ordering number : EN7683A TF218TH N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones.

IT05911

Abstract: 75542 IT05909 TF202
Contextual Info: Ordering number : ENN7554 TF202 N-channel Junction FET TF202 Electret Condenser Microphone Applications • • • Especially suited for use in electret condenser microphone. Ultrasmall package permitting TF202 applied sets to be made small and slim. Excellent voltage characteristics.

N3001

Abstract: TF218
Contextual Info: Ordering number : ENN7088 TF218 N-channel Silicon Junction FET TF218 Capacitor Microphone Applications 0.2 • [TF218] 1.4 0.25 0.07 • unit : mm 2201 3 2 0.45 1 0.07 • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in audio, telephone capacitor

ISO220 package

Abstract: MWT273HP MwT-273 ISO220
Contextual Info: MwT-2 26 GHz High Power GaAs FET M ic r o W a v e T e c h n o l o g y Units in urn • • • • • +24.5 DBM OUTPUT POWER AT 12 GHZ 9 DB SMALL SIGNAL GAIN AT 12 GHZ 0.3 MICRON REFRACTORY METAUGOLD GATE 630 MICRON GATE WIDTH CHOICE OF CHIP AND THREE PACKAGE TYPES

Contextual Info: EC4A01LF Ordering number : EN8714 EC4A01LF N-Channel Silicon Junction FET Condenser Microphone Applications Features • • • • • • Ultrasmall 1710 size , thin (0.35mm) leadless package. Especially suited for use in condenser microphone for audio equipments and telephones.

Contextual Info: EC4A01LF Ordering number : EN8714 SANYO Semiconductors DATA SHEET EC4A01LF N-Channel Silicon Junction FET Condenser Microphone Applications Features • • • • • • Ultrasmall 1710 size , thin (0.35mm) leadless package. Especially suited for use in condenser microphone for audio equipments and telephones.

marking Sanyo

Abstract: EC3A01H
Contextual Info: Ordering number : ENN7301 EC3A01H N-Channel Silicon Junction FET EC3A01H Electret Condenser Microphone Applications Features • • unit : mm 2209 [EC3A01H] 1.200 4 0.3 0.500 3 0.500 0.320 • Ultraminiature 1206 size and thin (0.5mm) leadless package.

EC3A01B

Abstract: TA-3160
Contextual Info: Ordering number : ENN6612 EC3A01B N-Channel Silicon Junction FET EC3A01B Capacitor Microphone Applications Features • 0.15 0.15 0.05 1 2 0.25 0.4 0.65 0.25 • [EC3A01B] 0.35 0.2 3 0.5 1.0 • Ultrasmall 1006 size , thin (0.5mm) leadless package. unit : mm

TA-3161

Abstract: EC4A01C It02310 13001 fet
Contextual Info: Ordering number : ENN6613 EC4A01C N-Channel Silicon Junction FET EC4A01C Capacitor Microphone Applications 0.05 • 0.5 0.2 3 4 2 1 1 : Base 2 : Emitter 3 : Collector 4 : Collector 0.05 0.6 Bottom view 1.0 • [EC4A01C] 0.05 • 0.3 • Package Dimensions

FH101

Contextual Info: FH101 The Communications Edge Advanced Product Information High Dynamic Range FET Product Features • 50-3000 MHz Bandwidth • +36 dBm Output IP3 • 1.2 dB Noise Figure • 18 dB Gain • +18 dBm P1dB • Single or Dual Supply Operation • MTBF >100 Years

EC4A01TF

Contextual Info: EC4A01TF Ordering number : EN8715 EC4A01TF N-Channel Silicon Junction FET Condenser Microphone Applications Features • • • • • Ultrasmall 1006 size , thin (0.35mm) leadless package. Especially suited for use in condenser microphone for audio equipments and telephones.

TF218TH

Contextual Info: TF218TH Ordering number : ENN7683 TF218TH N-channel Silicon Junction FET Electret Condenser Microphone Applications Features • • • • • Ultrasmall package facilitates miniaturization in end products. Especially suited for use in electret condenser microphone for audio equipments and telephones.

EC3A01T

Abstract: ECSP1006-3
Contextual Info: Ordering number : ENN7617 EC3A01T N-Channel Silicon Junction FET EC3A01T Electret Condenser Microphone Applications Features Bottom View Top View 1 1.0 1 0.05 • [EC3A01T] 0.05 0.65 • unit : mm 2223 0.25 • Ultrasmall 1006 size and thin (0.35mm) leadless