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    MAX 1532 Search Results

    MAX 1532 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM611IM/NOPB Rochester Electronics LLC LM611IM - Operational Amplifier, 7000uV Offset-Max, BIPolar Visit Rochester Electronics LLC Buy
    CA3078E Rochester Electronics LLC CA3078 - Operational Amplifier, 1 Func, 5000uV Offset-Max, BIPolar, PDIP8 Visit Rochester Electronics LLC Buy
    OP37AL Rochester Electronics LLC OP37 - Operational Amplifier, 1 Func, 25uV Offset-Max, BIPolar, PBCY8 Visit Rochester Electronics LLC Buy
    OP15GZ Rochester Electronics LLC OP15 - Operational Amplifier, 1 Func, 3800uV Offset-Max, BIPolar, CDIP8 Visit Rochester Electronics LLC Buy
    MC33074AD Rochester Electronics LLC MC33074 - Operational Amplifier, 4 Func, 5000uV Offset-Max, BIPolar, PDSO14 Visit Rochester Electronics LLC Buy
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    MAX 1532 Price and Stock

    Rochester Electronics LLC MAX1532ETL-TG068

    IMVP4 INTEL CPU DUAL-PHASE STEP-
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    Rochester Electronics LLC MAX1532AETL-

    MAX1532 IMVP4 INTEL CPU DUAL-PHA
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    Rochester Electronics LLC MAX1532AETL

    CPU 2-PHASE STEP-DOWN CONTROL
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    Rochester Electronics LLC MAX1532ETL

    IMVP4 INTEL CPU DUAL-PHASE STEP-
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    Maxim Integrated Products MAX1532AETL-

    IC INTEGRATED CIRCUIT
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    MAX 1532 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    5M1270

    Abstract: 5m240 5M1270Z 5M80 5M40 Altera MAX V 5M40Z 5M160Z 5M240Z 5M2210Z
    Text: Section II. System Integration in MAX V Devices This section provides information about system integration in MAX V devices. This section includes the following chapters: May 2011 • Chapter 4, Hot Socketing and Power-On Reset in MAX V Devices ■ Chapter 5, Using MAX V Devices in Multi-Voltage Systems


    Original     		MV51004-1 5M1270 5m240 5M1270Z 5M80 5M40 Altera MAX V 5M40Z 5M160Z 5M240Z 5M2210Z PDF

    Untitled

    Abstract: No abstract text available
    Text: 153-26 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)260 V(BR)CBO (V)285 I(C) Max. (A)7.5 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 153-20 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)225 I(C) Max. (A)7.5 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		Freq500k PDF

    Untitled

    Abstract: No abstract text available
    Text: 153-24 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)240 V(BR)CBO (V)265 I(C) Max. (A)7.5 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF

    RCH8011

    Abstract: RCH8011B
    Text: Power Inductor< PIN Type : RCH Series> Type: RCH8011, RCH8011B ◆ Product Description ・8.3mm Max. φ RCH8011 , 8.8mm Max. φ(RCH8011B), 10.8mm Max. Height. ・Inductance range: 10 H～1.0mH(RCH8011), 1.0μH～8.2mH(RCH8011B) ・Rated current range: 0.47～4.1A(RCH8011), 5.0A～9.5A(RCH8011B)


    Original     		RCH8011, RCH8011B RCH8011) RCH8011B) RCH8011 11BNP-3R3N RCH8011 RCH8011B PDF

    RCH8011

    Abstract: RCH8011B
    Text: Power Inductor< PIN Type : RCH Series> Type: RCH8011, RCH8011B ◆ Product Description ・8.3mm Max. φ RCH8011 , 8.8mm Max. φ(RCH8011B), 10.8mm Max. Height. ・Inductance range: 10 H～1.0mH(RCH8011), 1.0μH～8.2μH(RCH8011B) ・Rated current range: 0.47～4.1A(RCH8011), 5.0A～9.5A(RCH8011B)


    Original     		RCH8011, RCH8011B RCH8011) RCH8011B) RCH8011 RCH8011B PDF

    CX240D5

    Abstract: CX380D5 CXE240D5 CXE380D5 MAX 1532
    Text: EUROPE Leistungs-Hybridrelais Serie CX Vorteile: Eingangsspezifikationen Eingangsspannungsbereich Typischer Eingangsstrom* Min. Abschaltspannung Ausgangsspezifikationen Lastspannungsbereich Spitzensperrspannung Stoßstrom 1 Zyklus Max I2t Max. Laststrombereich


    Original     		CX240D5 CXE240D5 CX380D5 CXE380D5 CX240D5 CX380D5 CXE240D5 CXE380D5 MAX 1532 PDF

    PF240D25

    Abstract: THYRISTOR PFE380D25 PF380D25 thyristoren PFE240D25
    Text: EUROPE Hochleistungs-Hybridrelais Serie PF Vorteile: Eingangsspezifikationen Eingangsspannungsbereich Typischer Eingangsstrom* Min. Abschaltspannung Ausgangsspezifikationen Lastspannungsbereich Spitzensperrspannung Stoßstrom 1 Zyklus Max I2t Max. Laststrombereich


    Original     		PF240D25 PFE240D25 PF380D25 PFE380D25 PF240D25 THYRISTOR PFE380D25 PF380D25 thyristoren PFE240D25 PDF

    EPM7032AE

    Abstract: EPM7064AE EPM7128A EPM7128AE EPM7256A JESD-71
    Text: MAX 7000A Includes MAX 7000AE Programmable Logic Device October 2001, ver. 4.1 Data Sheet • Features. ■ ■ ■ ■ ■ ■ f High-performance 3.3-V EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)


    Original     		7000AE 7000AE EPM7128A EPM7256A EPM7032AE EPM7064AE EPM7128AE JESD-71 PDF

    source code for eeprom 24LC

    Abstract: atmel 93c66A S93C56 BR9080AF-W i2c software program at24c04 24C02B 25LC080 atmel 24c02a S-93C56B stmicroelectronics "serial eeprom"
    Text: Section III. User Flash Memory This section provides information on the user flash memory UFM block in MAX II devices. This section includes the following chapters: • Chapter 9, Using User Flash Memory in MAX II Devices ■ Chapter 10, Replacing Serial EEPROMs with MAX II User Flash Memory


    Original     		PDF

    MP2144

    Abstract: MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT


    OCR Scan     		NPN110. 2N3633/52 ME8101 TIX895 1300M5A 1500MS 2500M5 2N2446 2N2379 3000MIA MP2144 MP2145 MP2143A 2G222 2N1029 2SB236 transistor 2SB235 2N1315 XC141 2N3132 PDF

    EMP7064

    Abstract: EMP7512 EMP7064B
    Text: MAX 7000B Programmable Logic Device June 2003, ver. 3.3 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) – Pin-compatible with the popular 5.0-V MAX 7000S and 3.3-V


    Original     		7000B 7000S EPM7512BQC208-5 EPM7512B EPM7512BQC208-7 EPM7512BQC208-10 EPM7512BTC144-5 EPM7512BTC144-7 EPM7512BTC144-10 EMP7064 EMP7512 EMP7064B PDF

    Untitled

    Abstract: No abstract text available
    Text: MAX 7000B Programmable Logic Device June 2003, ver. 3.3 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) – Pin-compatible with the popular 5.0-V MAX 7000S and 3.3-V


    Original     		7000B 7000S PDF

    EPM7032B

    Abstract: EPM7064B EPM7128AE EPM7128B EPM7256B EPM7512B JESD-71
    Text: MAX 7000B Programmable Logic Device April 2001, ver. 2.3 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) – Pin-compatible with the popular 5.0-V MAX 7000S and 3.3-V


    Original     		7000B 7000S EPM7032B EPM7064B EPM7128AE EPM7128B EPM7256B EPM7512B JESD-71 PDF

    MAX V

    Abstract: eQFP 64 footprint 5M40Z 5M1270Z eQFP 144 footprint 5M570Z 5m240zt144 5M80Z 5M240Z Altera MAX V
    Text: MAX V Device Handbook MAX V Device Handbook 101 Innovation Drive San Jose, CA 95134 www.altera.com Subscribe 2011 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX are Reg. U.S. Pat. & Tm. Off. and/or trademarks of Altera Corporation in the U.S. and other countries. All other trademarks and service marks are the property of their respective


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: International IQR Rectifier pd-s.uss IRGCH50KE TARGET IRGCH50KE IGBT Die in Wafer Form 1200 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) VcE(on) Collector-to-Emitter Saturation Voltage 3.8V Max.


    OCR Scan     		IRGCH50KE IRGCH50KE 250pA, 250pA PDF

    Untitled

    Abstract: No abstract text available
    Text: International I Q R Rectifier PD-9.1424 IRGCC50KE TARGET IRGCC50KE IGBT Die in Wafer Form ' 600 V Size 5 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description Guaranteed (Min/Max) VcE (on) Collector-to-Emltter Saturation Voltage 3.0V Max.


    OCR Scan     		P-944 IRGCC50KE IRGCC50KE 250pA, PDF

    EMP7064

    Abstract: EMP7032 EMP7064B Altera emp7064 EMP7128 EMP7032B EPM7032B EPM7064B EPM7128B EPM7256B
    Text: MAX 7000B Programmable Logic Device September 2003, ver. 3.4 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)


    Original     		7000B 7000S EMP7064 EMP7032 EMP7064B Altera emp7064 EMP7128 EMP7032B EPM7032B EPM7064B EPM7128B EPM7256B PDF

    EMP7064

    Abstract: Altera emp7064 emp7032 PLD eeprom programmer schematic EMP7128 22V10s
    Text: MAX 7000B Programmable Logic Device September 2003, ver. 3.4 Data Sheet Features. • ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)


    Original     		7000B 7000S pBLC44-5 EPM7032BLC44-7 EPM7032BTC44-3 EPM7032B EPM7032BTC44-5 EPM7032BTC44-7 EPM7032BTI44-5 EMP7064 Altera emp7064 emp7032 PLD eeprom programmer schematic EMP7128 22V10s PDF

    EMP7064

    Abstract: EMP7032 EMP7128 EMP7512 EMP7032B EMP7064B EPM7128bti
    Text: MAX 7000B Programmable Logic Device September 2005, ver. 3.5 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)


    Original     		7000B 7000S p83B-15 5962-9324702MXC) EPM7256EGM883B-20 5962-9324701MXC) EPM7256EWM883B-15 5962-9324702MYA) EPM7256EWM883B-20 5962-9324701MYA) EMP7064 EMP7032 EMP7128 EMP7512 EMP7032B EMP7064B EPM7128bti PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-9.1421 International lö R Rectifier IRGCH50FE TARGET IRGCH50FE IGBT Die in Wafer Form 1200 V Size 5 Fast Speed 5" Wafer Electrical Characteristics Wafer Form D escription Guaranteed (Min/Max) Collector-to-Emitter Saturation Voltage 3.5V Max. Param eter


    OCR Scan     		IRGCH50FE IRGCH50FE 250pA, 250pA PDF

    EMP7064

    Abstract: EMP7064B EMP7032 EMP7032B Altera emp7064 EPM7032B EPM7064B EPM7128B EPM7256B EPM7512B
    Text: MAX 7000B Programmable Logic Device September 2005, ver. 3.5 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1)


    Original     		7000B 7000S EMP7064 EMP7064B EMP7032 EMP7032B Altera emp7064 EPM7032B EPM7064B EPM7128B EPM7256B EPM7512B PDF

    Untitled

    Abstract: No abstract text available
    Text: International IQ R Rectifier PD-9,1422 IRGCH40KE TARGET IRGCH40KE IGBT Die in Wafer Form 1200 V Size 4 Ultra-Fast Speed 5" Wafer Electrical Characteristics Wafer Form Description G uaranteed (Min/Max) VcE (on) Collector-to-Emitter Saturation Voltage 3.8V Max.


    OCR Scan     		P-942 IRGCH40KE IRGCH40KE 250pA, 250pA PDF

    EPM7032B

    Abstract: EPM7064B EPM7128AE EPM7128B EPM7256B EPM7512B JESD-71
    Text: MAX 7000B Programmable Logic Device October 2001, ver. 3.1 Data Sheet • Features. ■ f High-performance 2.5-V CMOS EEPROM-based programmable logic devices PLDs built on second-generation Multiple Array MatriX (MAX®) architecture (see Table 1) –


    Original     		7000B 7000S EPM7032B EPM7064B EPM7128AE EPM7128B EPM7256B EPM7512B JESD-71 PDF