windows 7 trobleshooting
Abstract: L4W 63 L4W 74 message display on LED pic Panasonic Microcontroller for Monitor computer trobleshooting
Text: MICROCOMPUTER FlashWriter User’sManual Preliminary Pub.No.19980-004E MS-DOS is a registered trademark of Microsoft Corporation. Windows is a trademark of Microsoft Corporation. PanaXSeries is a trademark of Matsushita Electric Industrial Co., Ltd. The other corporation names, logotype and product names written in this book are trademarks or registered trademarks of their corresponding corporations.
|
Original
|
19980-004E
windows 7 trobleshooting
L4W 63
L4W 74
message display on LED pic
Panasonic Microcontroller for Monitor
computer trobleshooting
|
PDF
|
B43405
Abstract: samsung electrolytic capacitor siemens B43405 capacitor SIEMENS b43405 B43406 b43407 B4340 siemens saw filters EASY534 FALC54
Text: SPECTRUM Dieter Rogge to head Semiconductor Sales of sales and marketing in the Semiconductor Group of Siemens AG. With effect from January 1, 1997, Dieter Rogge will succeed Karlheinz Weigl as head After studying electrical engineering in Bremen, Rogge joined Siemens in 1972 as a
|
Original
|
|
PDF
|
MP2121
Abstract: UL2896 2SD2041 dc motor 24v printer 15 pin dot matrix printer head diode t95 paper sensor copy printer zener diode T408 l14W 24V DC motor for 24v for printer
Text: DOT MATRIX PRINTERMECHANISM /WP212FP=24=A tWP216FP=24-A SPECIFICATION AND OPERATION MANUAL ~&@l~ STARMICRONICSCO LTD NOTICE ● All rights reserved. Reproduction of any part of this manual in any form whatsoever, ● ● ● without STAR’s express permission is forbidden.
|
Original
|
/WP212FP
tWP216FP
3962611STARJ
Westerbachstra13e
NJ08854
D-6000
Tower11,
MP2121
UL2896
2SD2041
dc motor 24v printer
15 pin dot matrix printer head
diode t95
paper sensor copy printer
zener diode T408
l14W
24V DC motor for 24v for printer
|
PDF
|
GRM31MR71H105KA88L
Abstract: D05040H-683MLD D05040H D05040 MATSUSHITA PANASONIC printer motor MATSUSHITA printer motor GRM188R71E474KA12D resistor SMD footprint resistor smd motor and printer
Text: Maxim > App Notes > Power-Supply Circuits Keywords: SEPIC, Print Head Power Supply Mar 19, 2009 APPLICATION NOTE 4361 Reference Design Ensures Dynamic Output Voltages for a Print-Head Power Supply By: Surya Prakash Abstract: This article describes some important design parameters for managing power in a printer. The reference design
|
Original
|
MAX15005
com/an4361
AN4361,
APP4361,
Appnote4361,
GRM31MR71H105KA88L
D05040H-683MLD
D05040H
D05040
MATSUSHITA PANASONIC printer motor
MATSUSHITA printer motor
GRM188R71E474KA12D
resistor SMD footprint
resistor smd
motor and printer
|
PDF
|
2SD2220
Abstract: No abstract text available
Text: Power Transistors 2SD2220 Silicon NPN triple diffusion planar type darlington Unit: mm For low-frequency amplification 90˚ 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer.
|
Original
|
2SD2220
2SD2220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2220 Silicon NPN triple diffusion planar type darlington Unit: mm For low-frequency amplification 90˚ 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer.
|
Original
|
2002/95/EC)
2SD2220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2220 Silicon NPN triple diffusion planar type darlington Unit: mm For low-frequency amplification 90˚ 3.8±0.2 4.5±0.2 0.65±0.1 0.85±0.1 1.0±0.1 0.8 C 2.5±0.1 • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer.
|
Original
|
2002/95/EC)
2SD2220
|
PDF
|
2SD2598
Abstract: No abstract text available
Text: Transistors 2SD2598 Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 6.9±0.1 4.0 2.5±0.1 0.8 • Features ■ Absolute Maximum Ratings Ta = 25°C 0.65 max. 14.5±0.5 (1.0) • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer
|
Original
|
2SD2598
2SD2598
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD0946A, 2SD0946B Silicon NPN epitaxial planar type darlington For low-frequency amplification • Package ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer.
|
Original
|
2002/95/EC)
2SD0946A,
2SD0946B
O-126B-A1
2SD0946A
2SD0946B
2SD0946A
|
PDF
|
2SD1511G
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1511G Silicon NPN epitaxial planar type darlington For low-frequency output amplification • Package ■ Features • Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE = 4 000
|
Original
|
2002/95/EC)
2SD1511G
2SD1511G
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 4.0±0.2 5.1±0.2 5.0±0.2 ● ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE
|
Original
|
2SD893,
2SD893A
2SD893
2SD893A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistor 2SD892, 2SD892A Silicon NPN epitaxial planer type darlington For low-frequency amplification Unit: mm 5.0±0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE
|
Original
|
2SD892,
2SD892A
2SD892
2SD892A
|
PDF
|
DN8695
Abstract: HZIP023-P-0138
Text: DN8695 9-circuit Darlington Driver Array High Breakdown Voltage : 50V, Large Drive Current : 1.5A Unit : mm (12.33) 11.3±0.25 8.2±0.3 ø3.6 M Di ain sc te on na tin nc ue e/ d • Overview 1.27 1.8±0.25 3.5±0.3 • Driving of the printer motors, etc.
|
Original
|
DN8695
DN8695
HZIP023-P-0138
|
PDF
|
2SD893
Abstract: 2SD893A
Text: Transistor 2SD893, 2SD893A Silicon NPN epitaxial planer type darlington Unit: mm For low-frequency amplification 4.0±0.2 ● Forward current transfer ratio hFE is designed high, which is appropriate to the driver circuit of motors and printer hammer: hFE
|
Original
|
2SD893,
2SD893A
2SD893
2SD893
2SD893A
|
PDF
|
|
|
ISO/IEC 7810
Abstract: iso 7811-2 MAGNETIC HEAD MAGNETIC HEAD 1 track reader iso 7811-4 panasonic ZU magnetic card 14 iso 7810 warpage iso 7810 embossing specification MAGNETIC HEAD 2 track reader iso 7811-1
Text: Specification No.:MIS-DG60B123 SPECIFICATION for MAGNETIC CARD READER BUILT IN RS232 Model # ZU-1870MA8R2 Revision 1.00 JUL 2004 Matsushita Electrical Industrial Co., Ltd. Matsushita Industrial Information Equipment Co., Ltd. MAGNETIC CARD READER SPECIFICATION
|
Original
|
MIS-DG60B123
RS232
ZU-1870MA8R2
ISO/IEC 7810
iso 7811-2
MAGNETIC HEAD
MAGNETIC HEAD 1 track reader
iso 7811-4
panasonic ZU magnetic card 14
iso 7810 warpage
iso 7810 embossing specification
MAGNETIC HEAD 2 track reader
iso 7811-1
|
PDF
|
iso 7811-2
Abstract: iso 7811-4 iso 7810 embossing specification ISO/IEC 7810 iso 7811-5 iso 7810 warpage iso 7811 iso 7811-1 iso 7811-3 f2f decoder
Text: Specification No.:MIS-DG60B121 SPECIFICATION for MAGNETIC CARD READER BUILT IN RS232 Model # ZU-1870MA8R Revision 1.00 JUL 2004 Matsushita Electrical Industrial Co., Ltd. Matsushita Industrial Information Equipment Co., Ltd. MAGNETIC CARD READER SPECIFICATION
|
Original
|
MIS-DG60B121
RS232
ZU-1870MA8R
iso 7811-2
iso 7811-4
iso 7810 embossing specification
ISO/IEC 7810
iso 7811-5
iso 7810 warpage
iso 7811
iso 7811-1
iso 7811-3
f2f decoder
|
PDF
|
2SD0946
Abstract: 2SD0946A 2SD0946B 2SD946 2SD946A 2SD946B
Text: Power Transistors 2SD0946 2SD946 , 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 2SD0946
|
Original
|
2SD0946
2SD946)
2SD0946A
2SD946A)
2SD0946B
2SD946B)
2SD0946
2SD0946A
2SD0946B
2SD946
2SD946A
2SD946B
|
PDF
|
2sd1205
Abstract: No abstract text available
Text: Transistor 2SD1205, 2SD1205A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 2.5±0.1 6.9±0.1 Parameter 1.0 0.45±0.05 2SD1205 base voltage 2SD1205A Collector to 2SD1205 emitter voltage 2SD1205A Ratings VEBO Peak collector current
|
Original
|
2SD1205,
2SD1205A
2SD1205
2SD1205A
|
PDF
|
2sd946b
Abstract: 2SD0946 2SD0946A 2SD0946B 2SD1263 2SD946 2SD946A
Text: Power Transistors 2SD0946 2SD946 , 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol 2SD0946
|
Original
|
2SD0946
2SD946)
2SD0946A
2SD946A)
2SD0946B
2SD946B)
2sd946b
2SD0946
2SD0946A
2SD0946B
2SD1263
2SD946
2SD946A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD1478, 2SD1478A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Parameter 1.9±0.1 0.4±0.2
|
Original
|
2002/95/EC)
2SD1478,
2SD1478A
2SD1478
2SD1478A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Transistor 2SD1198, 2SD1198A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification • Features ■ Absolute Maximum Ratings Parameter 2SD1198 base voltage 2SD1198A Collector to 2SD1198 emitter voltage 2SD1198A * Ratings VEBO
|
Original
|
2SD1198,
2SD1198A
2SD1198
2SD1198A
2SD1198
|
PDF
|
2SD1478
Abstract: 2SD1478A
Text: Transistors 2SD1478, 2SD1478A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Parameter 1.9±0.1 0.4±0.2 0.65 2 1 (0.95) (0.95) ■ Absolute Maximum Ratings Ta = 25°C
|
Original
|
2SD1478,
2SD1478A
2SD1478
2SD1478
2SD1478A
|
PDF
|
2SD1205
Abstract: 2SD1205A
Text: Transistors 2SD1205, 2SD1205A Silicon NPN epitaxial planar type darlington Unit: mm For low-frequency amplification 2.5±0.1 Collector-base voltage Emitter open 2SD1205 30 V 3 60 2 (2.5) Collector-emitter voltage 2SD1205 (Base open) 2SD1205A VCEO Emitter-base voltage (Collector open)
|
Original
|
2SD1205,
2SD1205A
2SD1205
2SD1205
2SD1205A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD0946 (2SD946), 2SD0946A (2SD946A), 2SD0946B (2SD946B) Silicon NPN epitaxial planar type darlington Unit: mm 8.0+0.5 –0.1 For low-frequency amplification 3.2±0.2 1.9±0.1
|
Original
|
2002/95/EC)
2SD0946
2SD946)
2SD0946A
2SD946A)
2SD0946B
2SD946B)
2SD0946
2SD0946A
2SD0946B
|
PDF
|
