CV-8710
Abstract: EME-G770HCD Sumitomo EME-G600 material SUMITOMO EME G770 EME-G760 MGC CCL-HL832 EME-G600 CCL-HL832 sumitomo g770 Ablestik ablebond 3230 epoxy
Text: Chapter 3 Package Materials CHAPTER 3 PACKAGE MATERIALS Introduction JIG-101 Ed 3.0 Declarable Substance List Reporting of 38 Substances of Very High Concern EU REACH Material Declaration Sheets Packages and Packing Methodologies Handbook 6 Jul 2010
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JIG-101
CV-8710
EME-G770HCD
Sumitomo EME-G600 material
SUMITOMO EME G770
EME-G760
MGC CCL-HL832
EME-G600
CCL-HL832
sumitomo g770
Ablestik ablebond 3230 epoxy
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9495-AG1
Abstract: ISO11469 samsung iso
Text: IT-Brancheforeningen Kontor & Data Sweden Norway Denmark Version: June 1998 ECO Declaration DK, NO, SE Model Brand 9495-AG1 IBM Product type Manufacturer TFT Monitor Samsung Electronics (Korea) Capacity Product size/ weight: (including stand) width(cm) height(cm) depth(cm) weight(kg)
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9495-AG1
9495-AG1
ISO11469
samsung iso
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K9KAG08U0M-PIB0
Abstract: K9KAG08U0M K9KAG08U0M-PCB0 K9KAG08U0MPCB0 samsung NAND Flash DIE K9KAG08U0M-PIB00 MATERIALS DECLARATION SAMSUNG Samsung EOL K9KAG08U0M-PC K9KAG08U0MPCK0
Text: This content requires the latest Adobe . Flash player home > products > Flash > NAND Flash > SLC-large block search Flash product search NAND Flash SLC-small block SLC-large block NAND Flash > SLC-large block > K9KAG08U0M package & packing MLC-large block
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K9KAG08U0M
K9KAG08U0MPCB00
K9KAG08U0MPCB0
K9KAG08U0M-PCB00
K9KAG08U0M-PCB0T
K9KAG08U0M-PCK00
K9KAG08U0M-PIB00
K9KAG08U0M-PIB0
K9KAG08U0M
K9KAG08U0M-PCB0
samsung NAND Flash DIE
MATERIALS DECLARATION SAMSUNG
Samsung EOL
K9KAG08U0M-PC
K9KAG08U0MPCK0
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part number decoder toshiba NAND Flash MLC
Abstract: No abstract text available
Text: Product data sheet Industrial USB Flash Drive unitedCONTRAST II USB2.0 high speed B U: Fl a sh Pr od u ct s Date : De ce m be r 18, 20 1 2 R e vi si o n: 1 .3 0 Fi le : u ni te d C O N TRA ST _E x BP_ dat a_ sh e e t_R e v 13 0. do c USB Flash Drive unitedCONTRAST II
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512MByte
16GByte
CH-9552
Rev130
part number decoder toshiba NAND Flash MLC
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sandisk SD Card 2GB
Abstract: CMD27
Text: Product Data Sheet Industrial Memory Card S-200 Series SPI, SD compliant B U: Date : Re vi si o n : Fi le : Swissbit AG Industriestrasse 4 CH-9552 Bronschhofen Switzerland Fl a sh Pr od u ct s De ce m be r 11 , 2 0 1 2 1 .4 0 S -2 0 0 _d a t a _s h e et _S D - L xB N _ R ev 1 40 . d o c
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S-200
CH-9552
Rev140
sandisk SD Card 2GB
CMD27
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sandisk 32GB Nand flash
Abstract: No abstract text available
Text: Product Data Sheet Industrial SDHC Memory Card S-220 Series SPI, SDHC compliant, class 6 & 10 compliant B U: Fl a sh Pr od u ct s Date : Marc h 25 , 2 0 13 Re vi si o n : 1 .3 0 Fi le : S - 2 20 _da ta_ s he e t_ SD - Lx B N_Re v1 2 0 .d oc S-220 Series SDHC Memory Card
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S-220
CH-9552
Rev130
sandisk 32GB Nand flash
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet Industrial SDHC Memory Card S-220 Series SPI, SDHC compliant class 6 & 10 compliant B U: Fl a sh Pr od u ct s Date : Marc h 25 , 2 0 13 Re vi si o n : 1 .3 0 Fi le : S - 2 20 _da ta_ s he e t_ SD - Lx B N_Re v1 2 0 .d oc S-220 Series SDHC Memory Card
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S-220
CH-9552
Rev130
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet Industrial SD Memory Card S-200 Series SPI, SD compliant B U: Date : Re vi si o n : Fi le : Swissbit AG Industriestrasse 4 CH-9552 Bronschhofen Switzerland Fl a sh Pr od u ct s De ce m be r 11 , 2 0 1 2 1 .4 0 S -2 0 0 _d a t a _s h e et _S D - L xB N _ R ev 1 40 . d o c
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S-200
CH-9552
Rev140
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panasonic ce certificate
Abstract: Iec384-14 Si3034PCI-EVB AN-1701 NCB fuse AN17 Si3014 Si3021 Si3034
Text: AN17 DESIGNING FOR INTERNATIONAL SAFETY COMPLIANCE Introduction This application note is a practical guide to obtaining certification marks for safety compliance worldwide. The information presented here is based on a successful submittal of the Si3034PCI-EVB evaluation board to
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Si3034PCI-EVB
UL1950.
panasonic ce certificate
Iec384-14
AN-1701
NCB fuse
AN17
Si3014
Si3021
Si3034
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S3F8285XZZ-TW85
Abstract: S3F84K4
Text: 2/4/2014 Microcontroller Product Catalogue | Samsung Semiconductor Global Website C SEMICONDUCTOR Home Product System Logic PRODUCTS SUPPORT NEWS & EVENTS SALES NETWORK ABOUT US C C Enter the keyword Microcontroller Product Catalogue Microcontroller PRODUCT CATALOGUE
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S3F8285
S3F8285XZZ-TW85
S3F84K4
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K4S281632I-UC75
Abstract: K4S281632I-UC60 K4S281632I-UI75 K4S281632I 8MB SDRAM K4S281632I-UL75 8Mb samsung SDRAM K4S281632IUC60 K4S281632IUC75 K4S280832I
Text: K4S280432I K4S280832I K4S281632I Synchronous DRAM 128Mb I-die SDRAM Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4S280432I
K4S280832I
K4S281632I
128Mb
215KB
K4S281632I-TC75
K4S281632I-UC60
K4S281632I-UC75
K4S281632I-UI75
K4S281632I-UL75
K4S281632I
8MB SDRAM
8Mb samsung SDRAM
K4S281632IUC60
K4S281632IUC75
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K4M28323PH-HG75
Abstract: No abstract text available
Text: K4M28323PH - F H E/G/C/F Mobile SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 1.8V power supply. The K4M28323PH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the
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K4M28323PH
32Bit
90FBGA
K4M28323PHW3000
Q2/2005
Q3/2005
145KB
264KB
K4M28323PH-HG1L0
K4M28323PH-HG750
K4M28323PH-HG75
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single phase UPS 230V
Abstract: 1000 va ups repair manual APPHDD500 AX150SC gigabyte ices 003 class b SSR212PP IEC320-C14 circuit for domestic UPS design intel canada ices 003 class b PC2100
Text: Intel Storage System SSR212PP Based on EMC AX-150* Technology Technical Product Specification Hardware Revision 1.1 Storage Group Technical Marketing Revision History Intel® Storage System SSR212PP TPS Revision History Date Revision Modifications Number
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SSR212PP
AX-150*
SSR212PP
single phase UPS 230V
1000 va ups repair manual
APPHDD500
AX150SC
gigabyte ices 003 class b
IEC320-C14
circuit for domestic UPS design
intel canada ices 003 class b
PC2100
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date code marking samsung transistor
Abstract: "MATERIAL DECLARATION SHEET" samsung Tray Tape MATERIALS DECLARATION SAMSUNG
Text: K1S64161CC UtRAM Document Title 4Mx16 bit Page Mode Uni-Transistor Random Access Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft - Design Target April 12, 2004 Advanced 0.1 Revised - Filled out ICC2 and ISB1 value ICC2 max : 40mA
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K1S64161CC
4Mx16
Q4/2004
Q2/2007
Q3/2007
205KB
K1S64161CC-BI700
K1S64161CC-BI70T
K1S64161CC-W3000
date code marking samsung transistor
"MATERIAL DECLARATION SHEET"
samsung Tray Tape
MATERIALS DECLARATION SAMSUNG
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K7M323635C
Abstract: K7M323635C-PC75
Text: K7M323635C K7M321835C 1Mx36 & 2Mx18 Flow-Through NtRAMTM 36Mb NtRAMTM Specification 100 TQFP with Pb / Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7M323635C
K7M321835C
1Mx36
2Mx18
equipmC-PI750
Q1/2006
Q2/2006
386KB
140KB
K7M323635C-PC750
K7M323635C-PC75
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sca-2 40 pin to sata
Abstract: toshiba 8GB Nand flash bga toshiba flash memory 8gb alpa 600 manual instruction sca-2 to sata MOTHERBOARD CIRCUIT diagram only X3-297-1997 toshiba 8GB 26 PIN Nand flash P-5239-26* toshiba
Text: Zeus Fibre Channel 3.5-Inch Solid State Drive Product Datasheet Export Administration Regulations This document may contain technical data controlled by the U.S. Export Administration Regulations, and may be subject to the approval of the U.S. Department of Commerce prior to export. Any export, directly or
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128Gb Nand flash Samsung
Abstract: ssd fpga controller 128Gb Nand flash toshiba samsung nand flash TLC P-5239-26* toshiba mounting holes for 2.5 inch HDD SATA DELL UL94V0 toshiba 8GB Nand flash bga 128GB Nand flash tlc P-5239-26
Text: Zeus Serial ATA SATA 2.5-Inch Solid State Drive Product Datasheet Export Administration Regulation This document may contain technical data controlled by the U.S. Export Administration Regulations, and may be subject to the approval of the U.S. Department of Commerce prior to export. Any export, directly or
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Untitled
Abstract: No abstract text available
Text: K7A323600M K7A321800M 1Mx36 & 2Mx18 Synchronous SRAM 36Mb Sync. Pipelined Burst SRAM Specification 100TQFP with Pb only INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7A323600M
K7A321800M
1Mx36
2Mx18
100TQFP
K7A323600M-QC200
Q2/2003
Q3/2003
Q4/2006
Q1/2007
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K7Q163662B-FC16
Abstract: date code body marking samsung
Text: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7Q163662B
K7Q161862B
512Kx36-bit,
1Mx18-bit
512Kx36
1Mx18
K7Q163662B-FC16
date code body marking samsung
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K7Q161862B-EC16
Abstract: ntram
Text: K7Q163662B K7Q161862B 512Kx36 & 1Mx18 QDRTM b2 SRAM Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Jan. 27, 2004 Advance 1.0 1. Final spec release Mar. 18, 2004 Final Rev. No. The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
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K7Q163662B
K7Q161862B
512Kx36-bit,
1Mx18-bit
512Kx36
1Mx18
K7Q161862B-EC16
ntram
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"MATERIAL DECLARATION SHEET"
Abstract: M470T5663CZ3
Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb C-die 64-bit Non-ECC 60FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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200pin
64-bit
60FBGA
260KB
231KB
M470T5663CZ3-CD5
M470T5663CZ3-CE6
M470T5663CZ3-CE7
M470T5663CZ3-CF7
"MATERIAL DECLARATION SHEET"
M470T5663CZ3
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DDS2004
Abstract: OQA-2049 VDA 232.101 36350 sony chemical fuse DELTA 10000-0162 denso bosch roadmap EPCOS Marking and Package according to BMW terminals
Text: SAW Components Preliminary Design Goal DGLP31M01 SAW Components DGLP31M01 1880,0 MHz Low-Loss Filter for Mobile Communication Preliminary Design Goal Features 2 3 bottom view 4 5 0,5 0,5 0,4 max • PCS systems, transmit path High selectivity Usable passband 60 MHz
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DGLP31M01
DGLP31M01
LP31A
DDS2004
OQA-2049
VDA 232.101
36350
sony chemical fuse
DELTA 10000-0162
denso
bosch roadmap
EPCOS Marking and Package according to
BMW terminals
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free computer hardware repairing notes
Abstract: samsung 2233 LCD vertical sync transistor 2201 GSM 1800 receiver nokia lcd willtek add 2201 are Sony LCD connector pins same as samsung LCD cat 5 RJ 45 lan cable SONY service manual circuits
Text: 2201 ProLock 3G test set for service Getting Started Manual For serial numbers 0003001 and higher Notice Every effort was made to ensure that the information in this document was accurate at the time of printing. However, information is subject to change without notice, and Aeroflex reserves the
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809-000-A
003-000-A
007-000-A
0003xxx
free computer hardware repairing notes
samsung 2233 LCD vertical sync
transistor 2201
GSM 1800 receiver
nokia lcd
willtek
add 2201
are Sony LCD connector pins same as samsung LCD
cat 5 RJ 45 lan cable
SONY service manual circuits
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet Industrial SDHC Memory Card S-220 Series SPI, SDHC compliant S-220 Series SDHC Memory Card 1 Feature summary • Custom-designed, highly-integrated memory controller o Fully compliant with SD Memory Card specification 2.0
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S-220
ACMD41)
CH-9552
Rev110
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