MARKING C3F
Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
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PC8182TB
PC8182TB
HS350
WS260
VP215
IR260
PU10206EJ01V0DS
MARKING C3F
PC8181TB
F MARKING 6PIN
transistor marking wt
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PC2747TB
Abstract: PDC800M
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2747TB,µPC2748TB 3 V, SUPER MINIMOLD SILICON MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC2747TB, µPC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile communications. These ICs are packaged in super minimold package which is smaller than conventional minimold.
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PC2747TB,
PC2748TB
PC2748TB
PC2747TB
PDC800M
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marking C1s
Abstract: PDC800M
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: BIPOLAR DIGITAL INTEGRATED CIRCUIT UPB1510GV 3.0 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR DBS TUNERS DESCRIPTION The UPB1510GV is a 3.0 GHz input divide by 4 prescaler IC for DBS tuner applications. This IC is suitable for use of frequency divider for PLL synthesizer block. This IC is a shrink package version of the µPB585G so that this small
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UPB1510GV
UPB1510GV
PB585G
VP215
IR260
WS260
HS350
PU10311EJ01V0DS
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TFL0816-2N7
Abstract: TFL0816-6N8 TFL0816-8N2 marking g2m
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2128TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2128TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2128TB
PG2128TB
TFL0816-2N7
TFL0816-6N8
TFL0816-8N2
marking g2m
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marking g2p
Abstract: diode gp 429 TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2130TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another Lband application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2130TB
PG2130TB
marking g2p
diode gp 429
TFL0816-3N3
TFL0816-6N8
TFL0816-8N2
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marking 3f 6pin
Abstract: PC2771T marking C3f F MARKING 6PIN
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.
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PC8182TB
PC8182TB
marking 3f 6pin
PC2771T
marking C3f
F MARKING 6PIN
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6-PIN marking f1
Abstract: PC2746TB F MARKING 6PIN
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC2745TB,PC2746TB 3 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC2745TB and PC2746TB are silicon monolithic integrated circuits designed as buffer amplifier for mobile
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PC2745TB
PC2746TB
PC2746TB
HS350
WS260
VP215
IR260
PU10443EJ1V0DS
6-PIN marking f1
F MARKING 6PIN
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grm39ck1r5c50
Abstract: TFL0816-12N TFL0816-2N2 TFL0816-8N2 GRM39CH101J50
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2126TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2126TB is a GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and another L-band application. The device can operate with 3.6 V TYP., having the high gain and low distortion.
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PG2126TB
PG2126TB
grm39ck1r5c50
TFL0816-12N
TFL0816-2N2
TFL0816-8N2
GRM39CH101J50
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2106TB,
PG2110TB
PG2106TB
PG2110TB
PG2106TB
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371j
Abstract: No abstract text available
Text: BIPOLAR DIGITAL INTEGRATED CIRCUIT UPB1510GV 3.0 GHz INPUT DIVIDE BY 4 PRESCALER IC FOR DBS TUNERS DESCRIPTION The UPB1510GV is a 3.0 GHz input divide by 4 prescaler IC for DBS tuner applications. This IC is suitable for use of frequency divider for PLL synthesizer block. This IC is a shrink package version of the µPB585G so that this small
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UPB1510GV
UPB1510GV
PB585G
371j
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MARKING G1V
Abstract: marking G1Y G1V GRM39CH020C50PB RR0816P-102-D
Text: DATA SHEET GaAs INTEGRATED CIRCUITS µPG2106TB,µPG2110TB L-BAND PA DRIVER AMPLIFIER DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-band application. These devices can operate with 3.0 V TYP., having the high gain and low distortion.
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PG2106TB,
PG2110TB
PG2106TB
PG2110TB
PG2106TB
MARKING G1V
marking G1Y G1V
GRM39CH020C50PB
RR0816P-102-D
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marking 6b 6pin
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8178TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8178TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
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PC8178TK
PC8178TK
PC8178TB
marking 6b 6pin
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8179TK SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC can realize low current consumption with external chip inductor which can not be realized on internal 50 Ω
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PC8179TK
PC8179TK
PC8179TB
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC's L-BAND 4W HIGH POWER SPDT SWITCH IC UPG2027TQ FEATURES DESCRIPTION • LOW INSERTION LOSS: NEC's UPG2027TQ is a high power SPDT GaAs Switch IC 0.40 dB TYP. @ 1.0 GHz for digital cellular and cordless telephone applications. This 0.50 dB TYP. @ 2.0 GHz
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10-pin
UPG2027TQ
UPG2027TQ
UPG2027TQ-E1-A
IR260
VP215
WS260
HS350
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Marking W3
Abstract: NE5511279A-A NE5511279A-T1A
Text: SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio Systems. Dies are manufactured using our NEWMOS1 technology
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NE5511279A
NE5511279A
HS350-P3
WS260
VP215
IR260
PU10322EJ01V0DS
Marking W3
NE5511279A-A
NE5511279A-T1A
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Untitled
Abstract: No abstract text available
Text: SILICON POWER MOS FET NE5520279A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR 1.8 GHz 1.6 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology
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NE5520279A
NE5520279A
DCS1800
IR260
VP215
WS260
HS350-P3
PU10123EJ03V0DS
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2.45 Ghz power amplifier 45 dbm
Abstract: J842 2.45 Ghz power amplifier 30 db
Text: DATA SHEET SILICON POWER MOS FET NE552R479A 3.0 V OPERATION SILICON RF POWER LDMOS FET FOR 2.45 GHz 0.4 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE552R479A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.0 V WLL products. Dies are manufactured using our NEWMOS2 technology our
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NE552R479A
NE552R479A
HS350-P3
WS260
VP215
IR260
PU10124EJ03V0DS
2.45 Ghz power amplifier 45 dbm
J842
2.45 Ghz power amplifier 30 db
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HS350
Abstract: UPD5710TK VP215
Text: DATA SHEET NEC's WIDE BAND UPD5710TK SINGLE CONTROL CMOS SPDT SWITCH FEATURES DESCRIPTION • SUPPLY VOLTAGE : 1.8 to 3.3 V 2.8 V TYP. • SINGLE SWITCH CONTROL VOLTAGE: Vcont (H) = 1.8 to 3.3 V (2.8 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPD5710TK is a wide-band single control
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UPD5710TK
UPD5710TK
VP215
WS260
HS350
HS350
VP215
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Chlorine free flux
Abstract: HS350 UPD5710TK VP215
Text: DATA SHEET NEC's WIDE BAND SPDT SWITCH UPD5710TK FEATURES DESCRIPTION • SUPPLY VOLTAGE : VDD = 1.8 to 3.3 V 3.0 V TYP. • SWITCH CONTROL VOLTAGE: Vcont (H) = 1.8 to 3.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPD5710TK is a wide-band CMOS MMIC
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UPD5710TK
UPD5710TK
HS350
Chlorine free flux
HS350
VP215
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TFL0816-2N7
Abstract: TFL0816-6N8 TFL0816-8N2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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TFL0816-2N2
Abstract: TFL0816-12N TFL0816-8N2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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nec 2031
Abstract: 10-PIN HS350 UPG2031TQ UPG2031TQ-E1 VP215
Text: NEC's L-BAND SP3T SWITCH UPG2031TQ FEATURES DESCRIPTION • LOW INSERTION LOSS: LINS = 0.45 dB TYP. @ Vcont = 2.8 V/0 V, f = 1.0 GHz LINS = 0.55 dB TYP. @ Vcont = 2.8 V/0 V, f = 2.0 GHz NEC's UPG2031TQ is an L-band SP3T GaAs FET switch for CDMA/PCS/GPS triple mode digital cellular telephone applications. The device can operate from 500 MHz to above 2.0
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UPG2031TQ
UPG2031TQ
10-pin
HS350
nec 2031
HS350
UPG2031TQ-E1
VP215
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GRM39CH
Abstract: marking g2p TFL0816-3N3 TFL0816-6N8 TFL0816-8N2
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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