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    MARKING TRANSISTOR 1P 1 Search Results

    MARKING TRANSISTOR 1P 1 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54F139/BEA Rochester Electronics LLC 54F139 - Decoder/Driver, F/FAST Series, Inverted Output, TTL, CDIP16 - Dual marked (M38510/33702BEA) Visit Rochester Electronics LLC Buy
    54F151/BEA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) Visit Rochester Electronics LLC Buy
    54F151/BFA Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDFP16 - Dual marked (M38510/33901BFA) Visit Rochester Electronics LLC Buy
    54F157/BEA Rochester Electronics LLC Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33903BEA) Visit Rochester Electronics LLC Buy
    54F153/BEA Rochester Electronics LLC 54F153 - Multiplexer, 2-Func, 4 Line Input, TTL, CDIP16 - Dual marked (M38510/33902BEA) Visit Rochester Electronics LLC Buy

    MARKING TRANSISTOR 1P 1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING 1P

    Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222ALT1 OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz

    kst2222a

    Abstract: No abstract text available
    Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage


    Original     		PDF KST2222A OT-23 KST2222A

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    KST2222A

    Abstract: transistor kst2222a
    Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage


    Original     		PDF KST2222A OT-23 KST2222A transistor kst2222a

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
    Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant


    Original     		PDF MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P

    UTC 225

    Abstract: No abstract text available
    Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE


    Original     		PDF MMBT2222A 500mA. OT-23 QW-R206-019 UTC 225

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)


    Original     		PDF WBFBP-03A TK2222ATTD03 WBFBP-03A TK2907ATTD03) 500mA 150mA 100MHz 150mA

    TRANSISTOR 1P

    Abstract: Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)


    Original     		PDF WBFBP-03A TK2222ATTD03 WBFBP-03A TK2907ATTD03) 150mA 100MHz 150mA TRANSISTOR 1P Transistor MARKING 1P 1p TRANSISTOR marking 1p transistor transistor 1P F marking transistor 1p 1 TK2222ATTD03

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)


    Original     		PDF WBFBP-03A MMBT2222AE WBFBP-03A MMBT2907AE) 150mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors TK2222ATTD03 C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (TK2907ATTD03)


    Original     		PDF WBFBP-03A TK2222ATTD03 WBFBP-03A TK2907ATTD03) 150mA 500mA 100MHz 150mA

    transistor marking 1p Z

    Abstract: MMBT2222AE MMBT2907AE transistor 1p
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2222AE C TRANSISTOR WBFBP-03A 1.6x1.6×0.5 unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B FEATURES Complementary PNP Type available (MMBT2907AE)


    Original     		PDF WBFBP-03A MMBT2222AE WBFBP-03A MMBT2907AE) transistor marking 1p Z MMBT2222AE MMBT2907AE transistor 1p

    marking 1p npn

    Abstract: MARKING CODE 1P TRANSISTOR code marking 1P 3 J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT
    Text: MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907AT Ultra-Small Surface Mount Package SOT-523 Dim Min Max Typ A A 0.15 0.30 0.22 C B 0.75 0.85 0.80 C 1.45 1.75


    Original     		PDF MMBT2222AT MMBT2907AT) OT-523 OT-523, J-STD-020A MIL-STD-202, 100mA 300mA DS30268 marking 1p npn MARKING CODE 1P TRANSISTOR code marking 1P 3 J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT

    MMBT2907ALT1

    Abstract: No abstract text available
    Text: 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc max =225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1.


    Original     		PDF 2SD602LT1 MMBT2907ALT1 225mW 150mA 500mA 150mA 500mA 100MHz MMBT2907ALT1

    TRANSISTOR 1P SOT23

    Abstract: TRANSISTOR 1P marking 1p transistor sot23 1p TRANSISTOR 1p transistor sot23 MMBT2222A-1P MMBT2222ALT1 1P MMBT2222ALT1 1P NPN marking 1p sot23
    Text: @vic MMBT2222ALT1 SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF MMBT2222ALT1 OT-23 OT-23 150mA 500mA, 100MHz MMBT2222A TRANSISTOR 1P SOT23 TRANSISTOR 1P marking 1p transistor sot23 1p TRANSISTOR 1p transistor sot23 MMBT2222A-1P MMBT2222ALT1 1P MMBT2222ALT1 1P NPN marking 1p sot23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 1. 0 W (Tamb=25℃) Collector current 0.6 A ICM: Collector-base voltage 75 V V(BR)CBO:


    Original     		PDF OT-23 MMBT2222ALT1 OT-23 150mA 500mA, 100MHz MMBT2222A

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. 1


    Original     		PDF LMBT2222ATT1 SC-89 LMBT2222ATT3

    MMBT2222AT

    Abstract: marking 1p
    Text: SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR NPN FEATURES Power dissipation PCM : 0.15 W（Tamb=25℃） Collector current ICM : 0.6 A Collector-base voltage V(BR)CBO : 75 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150℃


    Original     		PDF OT-523 MMBT2222AT OT-523 Colle40 100MHz 150mA OD-523 MMBT2222AT marking 1p

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC807A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E B L L D Complementary to BC817A. H MAXIMUM RATING Ta=25 3 G A 2 1 CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage


    Original     		PDF BC807A BC817A. -500mA -500mA, -50mA -10mA, 100MHz BC807A-16 BC807A-25

    uj01

    Abstract: M33 TRANSISTOR
    Text: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ElICTION DEVICE GN1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 2.1±0.1 1.25±0.1 LO 1P C~ -14 M 0 0+1 96 Ln 2 _+ C14 0 Resistors Built-in TYPE


    Original     		PDF TC-2173 1988M uj01 M33 TRANSISTOR

    Marking 1p

    Abstract: 1p TRANSISTOR MMBT2222AT NS225
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Transistors MMBT2222AT TRANSISTOR NPN SOT-523 1. BASE 2. EMITTER FEATURES Power dissipation 3. COLLECTOR PCM: 0.15 W (Tamb=25℃) Collector current ICM: 0.6 A Collector-base voltage


    Original     		PDF OT-523 MMBT2222AT OT-523 500mA 100MHz 150mA Marking 1p 1p TRANSISTOR MMBT2222AT NS225