MA3J742
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3J742 Silicon epitaxial planar type Unit : mm For switching circuits 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Two MA3X716s are contained in one package (2-pin series connection) • Optimum for low-voltage rectification because of its low forward
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MA3J742
MA3X716s
MA3J742
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Rating Unit Reverse voltage (DC) VR 30 V Peak forward current
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MA3X716
MA716)
MA3X704A
MA704A)
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marking symbol M1U
Abstract: MARKING M1U MA716
Text: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Forward current (DC) Single Series *
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MA3J742
MA742)
MA3X716
MA716)
marking symbol M1U
MARKING M1U
MA716
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MA3X716
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X716 Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Symbol Peak forward current Single Forward current (DC) Single 1.45 0.95 3 + 0.1 0.16 − 0.06 0.8 + 0.2 1.1 − 0.1 Rating VR 30 V 150 mA Series 1 : Anode 1 2 : Cathode 2
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MA3X716
O-236
SC-59
MA3X704As
MA3X716
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MA716
Abstract: MARKING M1U
Text: MA111 Schottky Barrier Diodes SBD MA716 Silicon epitaxial planer type Unit : mm +0.2 For switching For wave detection circuit 2.8 –0.3 +0.25 1.5 –0.05 ● Low forward rise voltage VF , optimum for low-voltage rectification ● Fast reverse recovery time trr, optimum for high-frequency rectifica-
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MA111
MA716
MA716
MARKING M1U
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MARKING M1U
Abstract: No abstract text available
Text: MA111 Schottky Barrier Diodes SBD MA742 Silicon epitaxial planer type Unit : mm For the switching circuit 2.1±0.1 0.425 1.25±0.1 0.425 ● Low forward rise voltage VF , optimum for low-voltage rectification ● Fast reverse recovery time trr, optimum for high-frequency rectifica-
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MA111
MA742
MA716
MARKING M1U
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8850MP-XX
Abstract: 8850MP
Text: Advanced Power Electronics Corp. APU8850 150mA ULTRA LOW DROPOUT POSITIVE ADJUSTABLE AND FIXED REGULATORS DESCRIPTION FEATURES The APU8850 device is an efficient linear voltage regulator with better than 2% initial voltage accuracy, very low dropout voltage and very low ground current designed
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OT-89,
OT-23-5L
APU8850
150mA
APU8850
APU88:
M1-A-5-G-v00
OT-89
M1-V-3-G-v00
8850MP-XX
8850MP
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APU8850-33
Abstract: marking code mp SOT-89 APU8850 APU8850X-XX APU8850Y5
Text: Advanced Power Electronics Corp. APU8850 150mA ULTRA LOW DROPOUT POSITIVE ADJUSTABLE AND FIXED REGULATORS DESCRIPTION FEATURES The APU8850 device is an efficient linear voltage regulator with better than 2% initial voltage accuracy, very low dropout voltage and very low ground current designed
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APU8850
150mA
APU8850
OT-23-5L,
OT-89
OT-89
M1-V-3-G-v00
APU8850-33
marking code mp SOT-89
APU8850X-XX
APU8850Y5
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MA3S781F
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3S781F Silicon epitaxial planar type For high speed switching circuits Unit: mm 0.28±0.05 0.80±0.05 Reverse voltage VR 30 V Maximum peak reverse voltage VRM 30 V Peak forward current Series Single Series 30 IF 150 Junction temperature
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MA3S781F
SC-81
MA3S781F
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series connection) • Forward voltage VF , optimum for low voltage rectification
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MA3J742
MA742)
MA3X716
MA716)
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MA3J742
Abstract: MA3X716 MA716 MA742
Text: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (double connection) • Forward voltage VF , optimum for low voltage rectification
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MA3J742
MA742)
MA3X716
MA716)
MA3J742
MA3X716
MA716
MA742
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MARKING 103
Abstract: marking symbol M1U MA3X704A MA3X716 MA704A MA716
Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Parameter 0 to 0.1 Symbol Rating Unit VR 30 V Maximum peak reverse voltage
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MA3X716
MA716)
MA3X704A
MA704A)
MARKING 103
marking symbol M1U
MA3X704A
MA3X716
MA704A
MA716
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Parameter 0 to 0.1 Symbol Rating Unit VR 30 V Maximum peak reverse voltage
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MA3X716
MA716)
MA3X704A
MA704A)
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MA3S781F
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781F Silicon epitaxial planar type For high speed switching circuits Unit: mm 0.28±0.05 0.80±0.05 Reverse voltage VR 30 V Maximum peak reverse voltage VRM 30
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2002/95/EC)
MA3S781F
SC-81
MA3S781F
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ma3j742
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series
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2002/95/EC)
MA3J742
MA742)
MA3X716
MA716)
ma3j742
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MA3J742
Abstract: MA3X716 MA716 MA742
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3X716 (MA716) is contained in one package (series
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2002/95/EC)
MA3J742
MA742)
MA3X716
MA716)
MA3J742
MA3X716
MA716
MA742
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MA3S781F
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781F Silicon epitaxial planar type For high speed switching circuits Unit: mm 0.28±0.05 0.80±0.05 Reverse voltage VR 30 V Maximum peak reverse voltage VRM 30
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2002/95/EC)
MA3S781F
MA3S781F
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X716 (MA716) Silicon epitaxial planar type Unit: mm For switching For wave detection 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05
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2002/95/EC)
MA3X716
MA716)
MA3X704A
MA704A)
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marking symbol M1U
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781FG Silicon epitaxial planar type For high speed switching circuits For wave detection • Package Features Code SSMini3-F3 Pin Name 1: Anode 1 2: Cathode 2
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2002/95/EC)
MA3S781FG
marking symbol M1U
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MA3J742
Abstract: MA3X716 MA716 MA742
Text: Schottky Barrier Diodes SBD MA3J742 (MA742) Silicon epitaxial planar type Unit: mm For switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IF 30 mA Forward current (DC) Single Series *
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MA3J742
MA742)
MA3X716
MA716)
MA3J742
MA3X716
MA716
MA742
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MA716
Abstract: MA3X716 panasonic ma diodes sc-59 Marking
Text: Schottky Barrier Diodes SBD MA3X716 (MA716) Unit : mm + 0.2 Silicon epitaxial planar type 2.8 − 0.3 0.65 ± 0.15 1.45 0.95 1.5 1 0.95 3 + 0.1 0.4 − 0.05 + 0.2 2.9 − 0.05 For switching circuits For wave detection circuit 1.9 ± 0.2 0.65 ± 0.15 + 0.25
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MA3X716
MA716)
O-236
SC-59
MA716
MA3X716
panasonic ma diodes sc-59 Marking
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MA3S781F
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S781F Silicon epitaxial planar type For high speed switching circuits Unit: mm 0.28±0.05 0.80±0.05 • Features VR 30 V VRM 30 V 30 Single Junction temperature
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2002/95/EC)
MA3S781F
SC-81
MA3S781F
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F600M
Abstract: S08230 l32 sot23 hp 3080 diode MARK, g5 sot23
Text: ¥J>0%. HEWLETT ft "Em PACKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodea Optimized fo r Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-23
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HSMP-38XX
HSMP-48XX
OT-23
HEWPS057P*
6091-4211E
5091-B184E
F600M
S08230
l32 sot23
hp 3080 diode
MARK, g5 sot23
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pmb 400 - s
Abstract: SIEMENS ks siemens s PMB 2200 PMB2400
Text: SIEMENS Quadrature Phase Modulator Transmitter Circuit PMB 2200 P relim inary Data Bipolar 1C Features • • • • • • • • • • • • • • • Double-balanced mixers Direct modulation Linear modulating inputs Symmetrical circuitry Generation of orthogonal carriers without
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P-DSO-16,
P-DSO-20
P-DSO-20-4
A235bD5
M1U11Ì
A23SbOS
DDST177
pmb 400 - s
SIEMENS ks
siemens s
PMB 2200
PMB2400
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