MARKING STMICROELECTRONICS YEAR DIGIT Z Search Results

MYS 99

Abstract: STMicroelectronics date code format STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics marking code AN926 STMicroelectronics marking code date diode soic date code stmicroelectronics INTEGRATED CIRCUIT DATE code stmicroelectronics
Contextual Info: AN926 APPLICATION NOTE Brand Traceability with for NVRAM Products INTRODUCTION To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a

MYS 99

Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
Contextual Info: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes

STAC4932

Abstract: STAC4932B 1715-3
Contextual Info: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European

Contextual Info: STAC2943 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ STAC air cavity packaging technology STAC package ■

STAC2933

Contextual Info: STAC2933 RF power transistor: HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package

Contextual Info: STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European

Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European

STAC3932

Abstract: STAC3932B STAC244B
Contextual Info: STAC3932B HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description

FERRITE TOROIDAL CORE DATA

Abstract: 200 pF air variable capacitor
Contextual Info: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

STAC2942F

Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
Contextual Info: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive

transistor marking G9

Abstract: J4-81 j4 81 MARKING D8
Contextual Info: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package

Contextual Info: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures

SD2941-10

Abstract: VK200 r.f choke SD2941 st marking EE code ST SD2931
Contextual Info: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures

SD2933W

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

resistor 560 ohm

Abstract: SD2933
Contextual Info: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed

sd2943

Contextual Info: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability

Contextual Info: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european

Bead 220 ohm 2.5A

Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
Contextual Info: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

sd2931-10w

Abstract: marking code oz 09-Sep-2004
Contextual Info: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures

Arco 423

Abstract: choke vk200 sd2931-10w
Contextual Info: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower

92196A146

Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
Contextual Info: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF

Contextual Info: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF