Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MARKING STMICROELECTRONICS YEAR DIGIT Z Search Results

    MARKING STMICROELECTRONICS YEAR DIGIT Z Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SCL3400-D01-1 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCL3400-D01-004 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCL3400-D01-10 Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    SCL3400-D01-PCB Murata Manufacturing Co Ltd 2-axis (XY) digital inclinometer Visit Murata Manufacturing Co Ltd
    DCL541A01 Toshiba Electronic Devices & Storage Corporation Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable Visit Toshiba Electronic Devices & Storage Corporation

    MARKING STMICROELECTRONICS YEAR DIGIT Z Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MYS 99

    Abstract: STMicroelectronics date code format STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics marking code AN926 STMicroelectronics marking code date diode soic date code stmicroelectronics INTEGRATED CIRCUIT DATE code stmicroelectronics
    Text: AN926 APPLICATION NOTE Brand Traceability with for NVRAM Products INTRODUCTION To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a


    Original     		AN926 MYS 99 STMicroelectronics date code format STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics marking code AN926 STMicroelectronics marking code date diode soic date code stmicroelectronics INTEGRATED CIRCUIT DATE code stmicroelectronics PDF

    MYS 99

    Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
    Text: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes


    Original     		AN926 MYS 99 STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics PDF

    STAC4932

    Abstract: STAC4932B 1715-3
    Text: STAC4932B RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 1000 W min. 1200 W typ. with 26 dB gain @ 123 MHz ■ Pulse conditions: 1 msec - 10% ■ In compliance with the 2002/95/EC European


    Original     		STAC4932B 2002/95/EC STAC244B STAC4932B STAC4932 1715-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: STAC2943 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ STAC air cavity packaging technology STAC package ■


    Original     		STAC2943 STAC177B STAC2943 SD2933, PDF

    STAC2933

    Abstract: No abstract text available
    Text: STAC2933 RF power transistor: HF/VHF/UHF N-channel MOSFETs Preliminary data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package


    Original     		STAC2933 STAC2933 STAC177B PDF

    Untitled

    Abstract: No abstract text available
    Text: STAC2932F RF power transistor HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European


    Original     		STAC2932F 2002/95/EC STAC2932F STAC244F PDF

    Untitled

    Abstract: No abstract text available
    Text: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Datasheet - production data Features • Gold metallization • Excellent thermal stability • Common source push-pull configuration • POUT = 300 W min. with 20 dB gain @ 175 MHz • In compliance with the 2002/95/EC European


    Original     		STAC2932B 2002/95/EC STAC244B STAC2932B DocID15497 PDF

    STAC3932

    Abstract: STAC3932B STAC244B
    Text: STAC3932B HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 580 W typ. with 24.6 dB gain @ 123 MHz ■ In compliance with the 2002/95/EC European directive Description


    Original     		STAC3932B 2002/95/EC STAC3932B STAC244B STAC3932 PDF

    FERRITE TOROIDAL CORE DATA

    Abstract: 200 pF air variable capacitor
    Text: STAC2932B HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 300 W min. with 20 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		STAC2932B 2002/95/EC STAC244B STAC2932B STAC29 FERRITE TOROIDAL CORE DATA 200 pF air variable capacitor PDF

    STAC2942F

    Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
    Text: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive


    Original     		STAC2942F 2002/95/EC STAC2942F STAC244F STAC2942FW Part Marking ST mosfets marking code 8Ff 17122 RG316-25 PDF

    transistor marking G9

    Abstract: J4-81 j4 81 MARKING D8
    Text: STAC3933 RF power transistor: HF/VHF/UHF RF power N-channel MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ STAC air cavity packaging technology STAC package


    Original     		STAC3933 STAC3933 STAC177B transistor marking G9 J4-81 j4 81 MARKING D8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures


    Original     		SD2941-10 SD2941-10 SD2931-10 PDF

    SD2941-10

    Abstract: VK200 r.f choke SD2941 st marking EE code ST SD2931
    Text: SD2941-10 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 175 W min. with 15 dB gain @ 175 MHz ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures


    Original     		SD2941-10 SD2941-10 SD2931-10 VK200 r.f choke SD2941 st marking EE code ST SD2931 PDF

    SD2933W

    Abstract: No abstract text available
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original     		SD2933 SD2933 SD2933W SD2933W PDF

    Untitled

    Abstract: No abstract text available
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original     		SD2933 SD2933 PDF

    resistor 560 ohm

    Abstract: SD2933
    Text: SD2933 HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 300 W min. with 20 dB gain @ 30 MHz ■ Thermally enhanced packaging for lower junction temperatures M177 Epoxy sealed


    Original     		SD2933 SD2933 resistor 560 ohm PDF

    sd2943

    Abstract: No abstract text available
    Text: SD2943 HF/VHF/UHF RF power N-channel MOSFETs Features • High power capability ■ POUT = 350 W min. with 22dB gain @ 30 MHz ■ PSAT = 450 W ■ Low RDS on ■ Thermally enhanced packaging for lower junction temperatures ■ Gold metallization ■ Excellent thermal stability


    Original     		SD2943 SD2943 SD2933, PDF

    Untitled

    Abstract: No abstract text available
    Text: SD4933 RF power transistor HF/VHF/UHF N-channel MOSFET Features • Improved ruggedness V BR DSS > 200 V ■ Excellent thermal stability ■ 20:1 all phases load mismatch capability ■ POUT = 300 W min. with 24 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european


    Original     		SD4933 2002/95/EEC SD4933 PDF

    Bead 220 ohm 2.5A

    Abstract: SD2931 SD2931-10 VK200 marking code transistor ND sd2931-10w
    Text: SD2931-10 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		SD2931-10 SD2931-10 SD2931 SD2931 Bead 220 ohm 2.5A VK200 marking code transistor ND sd2931-10w PDF

    Untitled

    Abstract: No abstract text available
    Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		SD2931-10 SD2931-10 SD2931 SD2931 PDF

    sd2931-10w

    Abstract: marking code oz 09-Sep-2004
    Text: SD2931-10 RF power transistor HF/VHF/UHF N-channel power MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower junction temperatures


    Original     		SD2931-10 SD2931-10 SD2931 sd2931-10w marking code oz 09-Sep-2004 PDF

    Arco 423

    Abstract: choke vk200 sd2931-10w
    Text: SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet — production data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 150 W min. with 14 dB gain @ 175 MHz ■ Thermally enhanced packaging for lower


    Original     		SD2931-10 SD2931-10 SD2931 Arco 423 choke vk200 sd2931-10w PDF

    92196A146

    Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		SD3933 2002/95/EEC SD3933 92196A146 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr PDF

    Untitled

    Abstract: No abstract text available
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original     		SD3933 2002/95/EEC SD3933 PDF