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    MARKING SJ DATE DIODE Search Results

    MARKING SJ DATE DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING SJ DATE DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE marking code SJ

    Abstract: Diode SJ marking SJ date diode diode marking SJ diode marking code 4n Sj 35 diode Phototriac Coupler Diode SJ 12 ma 8630 LR35579
    Text: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES RoHS compliant n FEATURES UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g l High reliability, long life and maintenance free


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    DIODE marking code SJ

    Abstract: diode marking code 4n Diode SJ marking code SJ Phototriac Coupler Transistor SJ 2008 colour code diode zener electronic component dates with photo diode marking SJ Sj 35 diode
    Text: SOLID STATE RELAY MAXIMUM LOAD CURRENT 1 A SJ SERIES RoHS compliant n FEATURES UL, CSA recognized Extremely small and light weight —Size: 10.0 W x 20.2 (L) × 12.8 (H) mm —Weight: approximately 5.5g l High reliability, long life and maintenance free


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    B140W SOD123

    Abstract: No abstract text available
    Text: Data Sheet Customer: Product : Small Signal Schottky Diode-Standard Part No.: B120W / B130W / B140W / B160W / B1100W Issued Date: 11-Jan-11 Edition : REV.A VIKING TECH CORPORATION 光頡科技股份有限公司 VIKING TECH CORPORATION KAOHSIUNG BRANCH 光頡科技股份有限公司高雄分公司


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    PDF B120W B130W B140W B160W B1100W 11-Jan-11 B140W SOD123

    PR3BMF52YSZF

    Abstract: No abstract text available
    Text: PR3BMF52NSZF PR3BMF52NSZF IT rms ≦1.2A, Non-Zero Cross type DIP 8pin Triac output SSR •Description ■Agency approvals/Compliance PR3BMF52NSZF Solid State Relay (SSR) is an integration of an infrared emitting diode (IRED), a Phototriac Detector and a main output Triac. This


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    PDF PR3BMF52NSZF PR3BMF52NSZF E94758 LR63705 20ategic OP14010EN PR3BMF52YSZF

    PR3BMF51YSLF

    Abstract: No abstract text available
    Text: PR3BMF51NSLF PR3BMF51NSLF IT rms ≦1.2A, Non-Zero Cross type DIP 8pin Triac output SSR •Description ■Agency approvals/Compliance PR3BMF51NSLF Solid State Relay (SSR) is an integration of an infrared emitting diode (IRED), a Phototriac Detector and a main output Triac. This


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    PDF PR3BMF51NSLF PR3BMF51NSLF E94758 LR63705 20ategic OP14009EN PR3BMF51YSLF

    DIODE marking code SJ

    Abstract: No abstract text available
    Text: IRF6645PbF IRF6645TRPbF DirectFET™ Power MOSFET ‚ RoHS Compliant, Halogen-Free ‚ l Lead-Free Qualified up to 260°C Reflow  l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification


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    PDF IRF6645PbF IRF6645TRPbF DIODE marking code SJ

    DIODE marking code SJ

    Abstract: No abstract text available
    Text: IRF6645PbF IRF6645TRPbF DirectFET™ Power MOSFET ‚ RoHS Compliant  l Lead-Free Qualified up to 260°C Reflow l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification


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    PDF IRF6645PbF IRF6645TRPbF DIODE marking code SJ

    marking code SJ general

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J130 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter  Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature


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    PDF 2002/95/EC) DZ2J130 marking code SJ general

    s07j Do219AB

    Abstract: VISHAY MARKING SG vishay sj 96 VISHAY MARKING SJ vishay diode MARKING CODE sg DO219AB S07B S07D S07G S07J
    Text: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s


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    PDF AEC-Q101 2002/95/EC 2002/96/EC DO219AB GS18/10K GS08/3K S07B-GS18 S07B-GS08 18-Jul-08 s07j Do219AB VISHAY MARKING SG vishay sj 96 VISHAY MARKING SJ vishay diode MARKING CODE sg DO219AB S07B S07D S07G S07J

    VISHAY MARKING SG

    Abstract: S07D-GS08 s07j Do219AB
    Text: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s


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    PDF AEC-Q101 2002/95/EC 2002/96/EC DO-219AB GS18/10K GS08/3K S07B-GS18 S07B-GS08 S07D-GS18 S07D-GS08 VISHAY MARKING SG s07j Do219AB

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    Abstract: No abstract text available
    Text: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s


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    PDF AEC-Q101 2002/95/EC 2002/96/EC DO-219AB GS18/10K GS08/3K S07B-GS18 S07B-GS08 S07D-GS18 S07D-GS08

    DO-219AB

    Abstract: S07B S07D S07G S07J S07M s07j Do219AB
    Text: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s


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    PDF AEC-Q101 2002/95/EC 2002/96/EC DO-219AB GS18/10K GS08/3K S07B-GS18 S07B-GS08 11-Mar-11 DO-219AB S07B S07D S07G S07J S07M s07j Do219AB

    DZ2J130

    Abstract: ZKE00088BED marking code SJ
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J130 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type • Package  Features  Excellent rising characteristics of zener current Iz


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    PDF 2002/95/EC) DZ2J130 DZ2J130 ZKE00088BED marking code SJ

    vishay diode MARKING CODE sg

    Abstract: No abstract text available
    Text: S07B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s


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    PDF AEC-Q101 2002/95/EC 2002/96/EC DO-219AB GS18/10K GS08/3K S07B-GS18 S07B-GS08 11-Mar-11 vishay diode MARKING CODE sg

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J130 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type • Features  Package  Excellent rising characteristics of zener current Iz


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    PDF 2002/95/EC) DZ2J130

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DZ2S130 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type DZ2J130 in SSMini2 type package • Features  Package  Excellent rising characteristics of zener current Iz


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    PDF 2002/95/EC) DZ2S130 DZ2J130

    H1117 3.3v

    Abstract: H11175 H1117-ADJ H1117 CD1117 1117 s adj 920 MARK A5 SOT89 H1117-1.8 Mark Y2 SOT MARKING KV SOT89
    Text: HI-SINCERITY Spec. No. : IC200401 Issued Date : 2004.02.01 Revised Date : 2005.07.14 Page No. : 1/8 MICROELECTRONICS CORP. H1117 Series H1117 Series Pin Assignment 3-Lead Plastic SOT-89 Package Code: M Pin 1: ADJ/GND Pin 2: VOUT Pin 3: VIN 1.2A Low Dropout Positive Voltage Regulator


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    PDF IC200401 H1117 OT-89 OT-223 200oC 183oC 217oC 260oC H1117 3.3v H11175 H1117-ADJ CD1117 1117 s adj 920 MARK A5 SOT89 H1117-1.8 Mark Y2 SOT MARKING KV SOT89

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J130 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type • Features  Package  Excellent rising characteristics of zener current Iz


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    PDF 2002/95/EC) DZ2J130

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DZ2S130 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type DZ2J130 in SSMini2 type package • Features  Package  Excellent rising characteristics of zener current Iz


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    PDF 2002/95/EC) DZ2S130 DZ2J130

    VISHAY MARKING SG

    Abstract: S070B vishay sj 96 DO-219AB S07D S07G S07J S07M Vishay semiconductor SM vishay diode MARKING CODE sg
    Text: S070B, S07D, S07G, S07J, S07M Vishay Semiconductors Small Signal Fast Switching Diode, High Voltage Features • • • • • For surface mounted applications Low profile package Ideal for automated placement Glass passivated High temperature soldering: 260 °C/10 s


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    PDF S070B, 2002/95/EC 2002/96/EC DO-219AB S07B-M-xx S07B-GSxx 18-Jul-08 VISHAY MARKING SG S070B vishay sj 96 DO-219AB S07D S07G S07J S07M Vishay semiconductor SM vishay diode MARKING CODE sg

    DZ2S

    Abstract: DZ2S130
    Text: DZ2S130 Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J130 in SSMini2 type package • Features  Excellent rising characteristics of zener current Iz  Low zener operating resistance RZ  Halogen-free / RoHs compliant


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    PDF DZ2S130 DZ2J130 UL-94 DZ2S130 SC-79 OD-523 DZ2S

    12N50E

    Abstract: 12N50ES FMI12N50E Diode type SMD marking SJ Sj 07 DIODE SMD FUJI DATE CODE fmi12n50es and/sj 1408
    Text: Device Name DATE DRAWN Oct.-14-'08 CHECKED Oct.-14-'08 CHECKED Oct.-14-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


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    PDF FMI12N50ES FMC12N50ES FMB12N50ES MS5F7223 H04-004-03 12N50E 12N50ES FMI12N50E Diode type SMD marking SJ Sj 07 DIODE SMD FUJI DATE CODE fmi12n50es and/sj 1408

    16N50ES

    Abstract: 16n50e MS5F7226 RGS18 smd code font type
    Text: Device Name DATE DRAWN Nov.-21-'08 CHECKED Nov.-21-'08 CHECKED Nov.-21-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


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    PDF FMI16N50ES FMC16N50ES FMB16N50ES MS5F7226 H04-004-03 16N50ES 16n50e MS5F7226 RGS18 smd code font type

    Untitled

    Abstract: No abstract text available
    Text: POWER RECTIFIER SDS14U150S FEATURES * * * * TO-22QF High Voltage and High Reliability High Speed Switching Trr=120nS Low VF in Turn on (VF=1,4V at IF= 14A) Suitable for Damper Diode in Horizontal Deflection Circuits 2 MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded


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    PDF SDS14U150S 120nS) O-22QF 50units D14U150S