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    MARKING RO LNA Search Results

    MARKING RO LNA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING RO LNA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bi directional LNA with AGC

    Abstract: LFB312G45SG2A509 SiW1721 2.4GHZ synthesizer
    Text: SiW1721 BLUETOOTH RADIO MODEM l ia VCC VDD_IO RESET_N VBB_OUT VCC_OUT VBATT_ANA VBATT_DIG CHG_PUMP VTUNE PLL Control Voltage Regulators and Power Distribution Clock Distribution nt LNA ADC 90 ADC PLL Synthesizer Power Control IDAC GFSK Modem fi Internal


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    PDF SiW1721 50-Ohm SiW1721TM R00Crf bi directional LNA with AGC LFB312G45SG2A509 2.4GHZ synthesizer

    IND0402

    Abstract: IND-0402 Res0402 Communications Integrated circuit FC7510 CAP0402
    Text: FC7510 Future Communications Integrated circuit Inc. Direct-conversion wireless LNA for Cellular-/PCS- CDMA, AMPS DESCRIPTION FEATURES FC7510 is primarily designed for a receiver LNA l Dual band operation: Cellular & PCS of FCI’s zipRF family for the dual-band, triplemode system, operating in the advanced mobile


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    PDF FC7510 FC7510 BMLF16. IND0402 IND-0402 Res0402 Communications Integrated circuit CAP0402

    IND-0402

    Abstract: IND0402 FC7510 Communications Integrated circuit CAP0402
    Text: FC7530 Future Communications Integrated circuit Inc. Direct-conversion wireless LNA for Cellular-/PCS- CDMA, AMPS and GPS DESCRIPTION FEATURES FC7530 is primarily designed for a receiver l Triple band operation: Cellular & PCS LNA of FCI’s zipRF family for the triple-band


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    PDF FC7530 FC7530 IND-0402 IND0402 FC7510 Communications Integrated circuit CAP0402

    gps lna

    Abstract: gps l10 RF GPS L10 - GPS
    Text: FC2109 Future Communications Integrated circuit Inc. Cellular CDMA/GPS LNA/Mixer DESCRIPTION FEATURES The FC2109 is designed primarily for use in a receiver front-end of the dual-band, dual-mode system, operating in the Cellular Code-Division Multiple-Access CDMA , and Global Positioning


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    PDF FC2109 FC2109 gps lna gps l10 RF GPS L10 - GPS

    Untitled

    Abstract: No abstract text available
    Text: ESH3B, ESH3C, ESH3D www.vishay.com Vishay General Semiconductor Surface Mount Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ideal for automated placement • Ultrafast recovery times for high efficiency • Low forward voltage, low power loss


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    PDF J-STD-020, AEC-Q101 DO-214AB

    TCXO-27

    Abstract: No abstract text available
    Text: FC7350 Future Communications Integrated circuit Inc. Direct-conversion wireless Rx IC for Cellular-CDMA/AMPS, GPS DESCRIPTION FEATURES FC7350 is an RF-to-baseband receiver IC, a dual-band triple-mode Cellular/GPS bands, CDMA/AMPS/GPS modes chip of FCI’s zipRF


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    PDF FC7350 FC7350 FC7350, TCXO-27

    Untitled

    Abstract: No abstract text available
    Text: FC2202 Future Communications Integrated circuit Inc. Receiver RFIC for PCS / GPS DESCRIPTION FEATURES The FC2202 is designed primarily for use in a l Complete Receiver Front -end of the receiver front -end of the dual-band, dual-mode system, operating in the PCS CDMA, and GPS.


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    PDF FC2202 FC2202 MLF2-32.

    tx2 1049

    Abstract: circuit schematic for ev 100 m mixer 10nF J5
    Text: Future Communications Integrated circuit Inc. FC3103 Receiver RF solution for Cellular CDMA/AMPS DESCRIPTION FEATURES The FC3103 is designed primarily for use in a receiver front-end Module IC of the single-band, dual-mode system, operating in the Advanced


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    PDF FC3103 FC3103 tx2 1049 circuit schematic for ev 100 m mixer 10nF J5

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S Si-MMIC-Amplifier BGA425 in SIEGET 25-Technology Preliminary Data # # # # # # # Multifunctional Case. 50 D. Block LNA/MIX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2 = 2 2 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (VD=3V,lD=9.5mA)


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    PDF BGA425 25-Technology OT363 Q62702-G0058

    SMD MARKING CODE 1am

    Abstract: gy 615 smd st smd diode marking code VU diode SMD MARKING CODE 8E smd MARKING 8g marking JE 6 pin 1am smd smd 1AM 1AM DIODE smd diode marking sG
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1996 Apr 26 Philips Semiconductors 1999 May 17 PHILIPS Philips Semiconductors Product specification Voltage regulator diodes PMBZ5226B to PMBZ5257B PINNING FEATURES • Total power dissipation:


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    PDF PMBZ5226B PMBZ5257B MAM243 115002/00/02/pp12 SMD MARKING CODE 1am gy 615 smd st smd diode marking code VU diode SMD MARKING CODE 8E smd MARKING 8g marking JE 6 pin 1am smd smd 1AM 1AM DIODE smd diode marking sG

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK211 TOSHIBA FIELD EFFECT TRANSISTOR M T SILICON N CHANNEL JUNCTION TYPE 1 1 • m. ■ ■ FM TUNER APPLICATIONS. VHF BAND AMPLIFIER APPLICATIONS. • • Low Noise Figure : NF = 2.5dB Typ. (f= 100MHz) High Forward Transfer Admitance : |Yfs| = 9mS (Typ.)


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    PDF 2SK211 100MHz)

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY62 Silicon controlled switch Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification Silicon controlled switch BRY62 PINNING DESCRIPTION


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    PDF BRY62 MSB014 115002/00/03/pp12

    st 9635

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The MRFIC Line 1.8 GHz LNA/Downmixer Designed prim arily for use in DECT, Japan Personal Handy Phone JPHP , and other w ireless Personal Comm unication System s (PCS) applications. The M R FIC 1804 includ es a low no ise a m p lifie r and do w n m ix e r in a low -co st


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    PDF SOIC-16 MRFIC1804 st 9635

    "MARKING CODE 11"

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Preliminary specification Supersedes data of 1997 Jul 14 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Jul 23 PHILIPS Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114TE


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    PDF PDTA114TE 115104/00/02/pp8 "MARKING CODE 11"

    LT 816

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS PUMH4 NPN resistor-equipped double transistor Product specification Supersedes data of 1997 Dec 16 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 10 PHILIPS PHILIPS Philips Semiconductors Product specification


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    PDF 115104/00/02/pp8 LT 816

    MARKING CODE 13t sot363

    Abstract: A03 MMIC mmic a03 sot363 13t mh 7400 marking 8019 7476 7476 PIN DIAGRAM dbl 8466 amplifier siemens
    Text: SIEMENS BGA425 S i-M M IC -A m p lifier in SIEGET 25-Technology Prelim inary Data # # # # # # # M ultifunctional Case. 50 £2 Block LNA/M IX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2=22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (V D= 3 V ,lD=9.5m A)


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    PDF BGA425 25-Technology OT363 BGA425 Q62702-G0058 GPS056Q4 MARKING CODE 13t sot363 A03 MMIC mmic a03 sot363 13t mh 7400 marking 8019 7476 7476 PIN DIAGRAM dbl 8466 amplifier siemens

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,


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    PDF T2332-XV12-P2-7600 053SbO fl235b05

    26ls34

    Abstract: H9205 marking code EY SMD SMD MARKING CODE ACQ
    Text: AMD DEFENSE LOGISTICS AGENCY OE F E N S C E L E C T R O N tC S SU PPLY CENTER DAYTON, OH 4 5444-5254 REFTP TO- D E S C -E C S M s. R o o n e y /(A V 986 5 1 3 -2 9 6 -6 0 4 7 /n jj) 2 4 JUN 1992 JUL 0 9 1992 S U B JE C T : N o tice o f R e v isio n (N O R ) 5 9 6 2 - R 2 14-92 fo r S ta n d a rd iz e d


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    PDF 5962-8759601EX 5962-8759601FX 5962-87596012X IMS--64 26ls34 H9205 marking code EY SMD SMD MARKING CODE ACQ

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS u P C 8 1 1 9 T , u P C 8 1 2 0 T VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ^¡PC8119T and ^¡PC8120T are silicon monolithic integrated circuits designed as variable gain amplifier. Due to


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    PDF PC8119T PC8120T WS60-00-1 C10535E)

    54LS76

    Abstract: SNJ54LS76AJ 30110B SNJ54LS76AFK
    Text: R E V IS IO N S LTR DESCRIPTION DATE A PP R O VED E temove vendor CAGE 18324. Correctior jn vendor CAGE 01295 part notation. Convert to M ilit a r y Drawing format. I d ito ria l changes throughout. Add LCC Dackaqe.Remove vendor CAGE 27014. Add MIL-M-38510/ number fo r L£C


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    PDF 30110Bâ MIL-M-38510/ M38510/30110BFX 76013012X SNJ54LS76AFK 54LS76AM/B2XJC M38510/30110B2X QPL-38510 54LS76 SNJ54LS76AJ 30110B

    MBRS10H100CT

    Abstract: appa appa 17 MBRS10H200CT marking code pj 10h100c
    Text: TAIWAN SEMICONDUCTOR MBRS10H100CT - MBRS10H200CT RoHS 10.0 AMPS. Surface Mount Schottky Barrier Rectifiers Switchmode Power Rectifiers COMPLIANCE d 2p a k F e atures 4“ <i•> ❖ <• ❖ ■> 4- <• P ls s lc rrv ile ria l u s s d n a m e s U n d e rw ik '.rs I a b o ra lo ry


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    PDF MBRS10H100CT MBRS10H200CT MechanS10H20OCT) OOCT-MBRS10H200CT S58280A) appa appa 17 MBRS10H200CT marking code pj 10h100c

    cmos book

    Abstract: No abstract text available
    Text: 2 5 6 M /2 8 8 M -b it b a s e d R IM M HYMR2xxx16 18 H with 256/288Mb RDRAMs PRELIMINARY O v e rv ie w K e y T im in g P a ra m e te rs /P a rt N u m b e rs T h e R a m b u s R I M M m o d u le is a g e n e ra l p u r p o s e T h e f o llo w in g t a b le lis ts th e f r e q u e n c y a n d la te n c y b in s


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    PDF HYMR2xxx16 256/288Mb 13tCYCLE 357MHz 110mA 180mA 130mA 750mA 120mA 190mA cmos book

    programmable unijunction transistor

    Abstract: "Programmable Unijunction Transistor" ph a5 transistor
    Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 Philips Sem iconductors 1999 Apr 27 PHILIPS Philips Semiconductors Product specification Programmable unijunction transistor


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    PDF BRY61 BRY61 MGL167 115002/00/03/pp8 programmable unijunction transistor "Programmable Unijunction Transistor" ph a5 transistor

    st smd diode marking code VU

    Abstract: SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 24 Philips Sem iconductors 1999 Apr 28 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40 series PINNING SOT23 (see Fig. 1a) • Low forward voltage


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    PDF BAS40, BAS40-04, BAS40-05 BAS40-06 BAS40-07 OT143B 115002/00/04/pp8 st smd diode marking code VU SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23