MARKING RKS Search Results

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

Contextual Info: NETWORKS TECHNOLOGY OF TOMORROW THICK FILM R-NETWORKS STRUCTURE 1 2 3 4 5 6 7 8 CUSTOMIZED CIRCUITS M-SERIES Ceramic substrate Pin-connection Printed conductor Ag, Pd Resistive layer Glass layer Solder plated copper term. Epoxy powder overcoating Marking

TS 11178

Abstract: BF 194 transistor marking code RKS transistors Q62702-F1347 bf 194 pin configuration
Contextual Info: BFP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code

marking code RKS transistors

Contextual Info: NETWORKS THICK FILM R-NETWORKS STRUCTURE 1 2 3 4 5 6 7 8 customized circuits m-series Ceramic substrate Pin-connection Printed conductor Ag, Pd Resistive layer Glass layer Solder plated copper term. Epoxy powder overcoating Marking product code coating color

Contextual Info: BFR949T NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 9 GHz, F = 1 dB at 1 GHz ESD Electrostatic discharge sensitive device, observe handling precaution! Type BFR949T Marking

Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFR94

Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BFR949T

Abstract: SC75 GMA marking
Contextual Info: BFR949T NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA
f T = 9 GHz F = 1.0 dB at 1 GHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

kamaya ohm resistor

Abstract: Kamaya Kamaya OHM
Contextual Info: FIXED CHIP RESISTOR NETW O RKS; RECTANGULAR TYPE & PRECISION m kamaya ohm RAG • Features 1. This product is a precision chip resistor networks for high-density, high-precision applications. 2. Stable perform ances with a T.C.R. : 50x10'6/°C and Tol. ±0.5% and

0.5 0.25w film resistor

Abstract: marking 4L
Contextual Info: KOA _LR LFF, RKS6 radial metal film leaded resistors narlial nna^al f iliw laarla^l nnr • i I i !■> i KOA SPEER ELECTRONICS, INC. EU RoHS features C O M P L I A N T Lead frame construction High density assembly and excellent self-standing strength

sprague DIP

Contextual Info: Hi WW SPRRGUE R-C NETWORKS • R-C NETWORKS • R-C NETWORKS Type 904C Type 906C MULTI-COMP Molded-Case DIP R-C Networks Features — • 14 an d 16-P in D IPs • B ypassed P u ll-U p and R -C C o u p lin g N etw o rks • S p e e d -U p N etw o rks • A c tiv e T erm in ato rs

Contextual Info: ENGINEERING DATASHEET MSD INC. TEST, PROCEDURE MSDP-790 RELAY TYPE: FCA-410-1622.L COMPUTER PART No. : 9 2 4 4 ,5 2 9 CUSTOMER/SPECIFICATION: MIL-R-83536/16-022L REV NONE TEST REQUIREMENTS COIL RKS. : 29Q+/-10% ohms OPERATE TIME: 15m SM ax RELEASE TIME: IS m S M ax

Contextual Info: SIEMENS B FP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1,5 GHz at collector currents from 20mA to 80mA RKs Q62702-F1347 1 =C 2=E LU II ''•cfr BFP 194 CO II 03 ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a ll RkShTS ftESEftvEb. LOC DIST DF DO REVISIONS RELEASED SEE DETAIL K RAISED CAVITY IDENTIFICATION 0.043 [1.09] .037 [0 .94] TYP R .104±.002 [2.64+0.05

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a ll LOC RkShTS ftGSEftvGÖ. DIST DF 0.043 [1.09] .037 [0.94] TYP R .104±.002 [2.64+0.05 TYP A SEE SHEET 2 DIM J 0.12O±.OO5 [3.05±0.13] 2 PLC D TTR-

427J

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a ll RkShTS ftESEftvEb. 0.043 [1.09] .037 [0.94] TYP R .104±.002 [2.64+0.05 TYP A DIM J 0.12O±.OO5 [3.05±0.13] 2 PLC D DF DO REVISIONS TTR- DESCRIPTIO

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a ll RkShTS ftGSEftvGÖ. LOC DIST DF DO REVISIONS TTR- RELEASED SEE DETAIL K RAISED CAVITY IDENTIFICATION 0.043 [1.09] .037 [0 .9 4 ] TYP R .104±.002

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a ll RkSh TS ftESEftvEb. LOC DIST DF DO REVISIONS TTR- RELEASED SEE DETAIL K RAISED CAVITY IDENTIFICATION 0.033 [0.84 .027 [0.69] TYP R .104±.002 [2.64+0.05

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a ll RkShTS ftESEftvEb. 0.043 [1.09] .037 [0.94] TYP R .104±.002 [2.64+0.05 TYP A DIM J 0.12O±.OO5 [3.05±0.13] 2 PLC D DF DO REVISIONS DESCRIPTION TTR-

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a ll RkShTS ftGSEftvGÖ. 0.043 [1.09] .037 [0.94] TYP R .104±.002 [2.64+0.05 TYP A SEE SHEET 2 DIM J 0.12O±.OO5 [3.05±0.13] 2 PLC D DF DO REVISIONS

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a l l RkShTS ftESEftvEb. LOC DIST DF DO REVISIONS TTR- RELEASED SEE DETAIL K RAISED CAVITY IDENTIFICATION 0.033 [0.84 .027 [0.69] TYP R .104±.002 [2.64+0.05

LT3973-3.3

Contextual Info: r n 8 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. a l l RkShTS ftESEftvEb. LOC DIST DF DO REVISIONS TTR- RELEASED SEE DETAIL K RAISED CAVITY IDENTIFICATION 0.033 [0.84 .027 [0.69] TYP R .104±.002 [2.64+0.05