BFP650
Abstract: No abstract text available
Text: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP650
OT343
OT343-PO
OT343-FP
BFP650:
OT323-TP
BFP650
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BFP650
Abstract: BFP650 noise figure AN077 infineon AN077 sdars C166 NF50 BFP650 2.4GHz lna
Text: BFP650 High Linearity Low Noise SiGe:C NPN RF Transistor Data Sheet Revision 1.0, 2010-10-22 RF & Protection Devices Edition 2010-10-22 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP650
OT343
OT343-PO
OT343-FP
BFP650:
OT323-TP
BFP650
BFP650 noise figure
AN077
infineon AN077
sdars
C166
NF50
BFP650 2.4GHz lna
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Untitled
Abstract: No abstract text available
Text: BFP650 High Linearity Silicon Germanium Bipolar RF Transistor Data Sheet Revision 1.1, 2012-09-13 RF & Protection Devices Edition 2012-09-13 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BFP650
OT343
OT343-PO
OT343-FP
BFP650:
OT323-TP
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Untitled
Abstract: No abstract text available
Text: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology
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BFP650F
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germanium transistors NPN
Abstract: BFP420F BFP650F GMA marking marking r5s
Text: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology
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BFP650F
BFP650may
germanium transistors NPN
BFP420F
BFP650F
GMA marking
marking r5s
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BFP650
Abstract: BGA420 T-25
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology
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BFP650
OT343
BFP650
BGA420
T-25
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PH marking code
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
PH marking code
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RBS 3000
Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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BFP650
OT343
RBS 3000
BFP650
BFP650 noise figure
BGA420
T-25
RBS INFINEON
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RBS 3000
Abstract: 1g28
Text: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology
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BFP650
OT343
RBS 3000
1g28
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MV358i
Abstract: MV324I LMV324I LMV358ID
Text: LMV321 SINGLE, LMV358 DUAL, LMV324 QUAD LOW-VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS SLOS263E – AUGUST 1999 – REVISED JULY 2002 D D D D LMV324 . . . D OR PW PACKAGE TOP VIEW 2.7-V and 5-V Performance No Crossover Distortion Low Supply Current:
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LMV321
LMV358
LMV324
SLOS263E
LMV321
LMV358
LMV324
MV358i
MV324I
LMV324I
LMV358ID
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Untitled
Abstract: No abstract text available
Text: High High Voltage Voltage Thick ThickFilm FilmResistors Resistors Welwyn Components VRW Series Series •VRW VRW37 meets requirements of BS / EN / IEC 60065 meets the requirements BS / ENsize / ·• VRW37 High working voltage to 10kV inof compact 60065 · IEC
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VRW37
VRW25
VRW37
VRW25â
IEC62
VRW68
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VRW68
Abstract: 1nF CAPACITOR
Text: High High Voltage Voltage Thick ThickFilm FilmResistors Resistors Welwyn Components VRW Series Series •VRW VRW37 approved to BS / EN / IEC 60065 meets the requirements BS / ENsize / ·s VRW37 High working voltage to 10kV inof compact IEC 60065 · High ohmic range to 68M
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VRW37
VRW25
IEC62
VRW68
5000/box
VRW68
1nF CAPACITOR
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Untitled
Abstract: No abstract text available
Text: Resistors High Voltage Make Possible High ThickVoltage Film Resistors Thick Film Resistors Welwyn Components VRW Series VRW Seriesmeets the requirements of BS / EN / • VRW37 60065 IEC VRW37 meets requirements of BS / EN / IEC 60065 • High working voltage
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VRW37
VRW37
10kV10kV
2011/65/EU
VRW25
VRW68
30Man
VRW25â
IEC62
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MV324SI
Abstract: mv358i MV324I
Text: LMV321 SINGLE, LMV358 DUAL, LMV324 QUAD, LMV324S QUAD WITH SHUTDOWN LOW-VOLTAGE RAIL-TO-RAIL OUTPUT OPERATIONAL AMPLIFIERS SLOS263F – AUGUST 1999 – REVISED AUGUST 2002 D D D D D D 2.7-V and 5-V Performance Low Power Shutdown Mode LMV324S No Crossover Distortion
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LMV321
LMV358
LMV324
LMV324S
SLOS263F
LMV324S)
LMV321
LMV358
LMV324
LMV324S
MV324SI
mv358i
MV324I
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80mAF
Abstract: 6069 marking
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Aug-16-2004
80mAF
6069 marking
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marking r5s
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
Oct-22-2002
marking r5s
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BFP650 noise figure
Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
curr26
Mar-27-2003
BFP650 noise figure
data sheet germanium diode
germanium transistors NPN
npn germanium
BFP650
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gummel
Abstract: oscilators BFP650
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Oct-13-2003
gummel
oscilators
BFP650
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BFP650
Abstract: No abstract text available
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability
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BFP650
VPS05605
OT343
Jan-08-2004
BFP650
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transistor 1T
Abstract: BFP650 equivalent
Text: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 For high power amplifiers Ideal for low phase noise oscilators Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz Gold metallization for high reliability
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BFP650
VPS05605
OT343
Jul-01-2003
transistor 1T
BFP650 equivalent
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LM 858 IC chip
Abstract: Q65111A3098
Text: 6-lead in-line MULTILED Enhanced optical Power LED ThinFilm / ThinGaN Lead (Pb) Free Product - RoHS Compliant LRTB GFUG Released Besondere Merkmale • Gehäusetyp: schwarzes P-LCC-6 Gehäuse zur Kontrasterhöhung (RGB-Displays) und diffuser Silikon-Verguß
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D-93055
LM 858 IC chip
Q65111A3098
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Untitled
Abstract: No abstract text available
Text: 6-lead in-line MULTILED Enhanced optical Power LED ThinFilm / ThinGaN Lead (Pb) Free Product - RoHS Compliant LRTB GFUG Released Besondere Merkmale Features • Gehäusetyp: schwarzes P-LCC-6 Gehäuse zur Kontrasterhöhung (RGB-Displays) und diffuser Silikon-Verguß
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Untitled
Abstract: No abstract text available
Text: PD-91340A International IÖR Rectifier IRF520NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF520NS • Low-profile through-hole (IRF520NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V
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OCR Scan
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IRF520NS)
IRF520NL)
PD-91340A
IRF520NS/L
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IRF540NS
Abstract: IRF540NL
Text: PD-91342A International Rectifier IÖR IRF540NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRF540NS • Low-profile through-hole (IRF540NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100 V
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OCR Scan
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IRF540NS)
IRF540NL)
PD-91342A
IRF540NS/L
IRF540NS
IRF540NL
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