Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT SWITCHING DIODES BAV19W, BAV20W, BAV21W SOD-123 Formed SMD Package Marking: As indicated below with cathode band Marking BAV19W - WY BAV20W - WZ BAV21W - JX
|
Original
|
PDF
|
BAV19W,
BAV20W,
BAV21W
OD-123
BAV19W
BAV20W
BAV21W
BAV20W
BAV19W
|
NCP1937
Abstract: No abstract text available
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters Common General Features http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB 1 20 NCP1937xxG AWLYWW
|
Original
|
PDF
|
NCP1937
751BS
NCP1937xxG
NCP1937/D
NCP1937
|
NCP1937
Abstract: No abstract text available
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX
|
Original
|
PDF
|
NCP1937
NCP1937/D
|
JEDEC51-1
Abstract: NCP1937 NCP1937C1DR2G
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX
|
Original
|
PDF
|
NCP1937
NCP1937/D
JEDEC51-1
NCP1937C1DR2G
|
NCP1937
Abstract: NTC thermistor circuit diagram TTC03 PFC inductor TTC-03
Text: NCP1937 Combination Power Factor Correction and QuasiResonant Flyback Controllers for Adapters http://onsemi.com MARKING DIAGRAM HV/X2 BO/X2 PControl SOIC−20 PONOFF Narrow Body QCT CASE 751BS Fault PSTimer QFB XXXXX A WL YY WW G 1 20 XXXXXXXXXXXXG XXXXXXXXXXXXX
|
Original
|
PDF
|
NCP1937
NCP1937/D
NTC thermistor circuit diagram
TTC03
PFC inductor
TTC-03
|
VARISTOr Mv
Abstract: VARISTOR
Text: Multilayer Technology Varistor Plus Packaging / Marking Information Packaging Information – ZV/ ZVX/ZVE/AV SMD Series . . . . . . . . . . 50 Packaging Information – ZV/AV Leaded Series . . . . . . . . . . . . . . . . . . 51 Packaging Information – MV/OV Leaded Dual Function Series . . . . . . 52
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EXPITAXIAL PLANAR SWITCHING DIODE BAS16WS SOD-323 PLASTIC PACKAGE Marking BAS16WS = A6 with cathode band Fast Switching Diode ABSOLUTE MAXIMUM RATINGS DESCRIPTION
|
Original
|
PDF
|
BAS16WS
OD-323
C-120
BAS16WS
Rev140604E
|
CC5401
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.
|
Original
|
PDF
|
CC5401
C-120
CC5401
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR CC5401 9AW TO-92 BCE MARKING : CC 5401 High Voltage PNP Transistor For General Purpose And Telephony Applications.
|
Original
|
PDF
|
CC5401
C-120
|
cd655e
Abstract: cd655 CSD655
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655 9AW TO-92 BCE Marking : As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL
|
Original
|
PDF
|
CSD655
25deg
C-120
cd655e
cd655
CSD655
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SURFACE MOUNT ZENER VOLTAGE DIODE MMSZ4697 SOD-123 PLASTIC PACKAGE Marking MMSZ4697 = DE ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise VALUE DESCRIPTION
|
Original
|
PDF
|
MMSZ4697
OD-123
10sec
C-120
MMSZ4697Rev260606E
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD655 9AW TO-92 BCE Marking : As Below ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL
|
Original
|
PDF
|
CSD655
25deg
C-120
|
BC856BW
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC856W , 857W, 858W SOT-323 Formed SMD Package Marking BC856W =3D BC857AW =3E BC856AW =3A BC857BW =3F BC856BW =3B BC857CW =3G
|
Original
|
PDF
|
BC856W
OT-323
BC857AW
BC856AW
BC857BW
BC856BW
BC857CW
BC857W
BC858W
BC856BW
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company FAST SWITCHING SURFACE MOUNT DIODES MCL4148 / MCL4448 LS-31 Micro MELF GLASS PACKAGE Marking:- Cathode Band Colour Black MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
|
Original
|
PDF
|
MCL4148
MCL4448
LS-31
C-120
161107E
|
|
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CMBA857 SOT23 PIN CONFIGURATION PNP 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 MARKING : AS BELOW 1 2 ABSOLUTE MAXIMUM RATINGS DESCRIPTION
|
Original
|
PDF
|
CMBA857
100uA,
C-120
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4403 SILICON PLANAR EPITAXIAL TRANSISTOR P–N–P transisto r Marking CMBT4403 = 2T Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
|
Original
|
PDF
|
OT-23
CMBT4403
C-120
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL PLANAR SILICON TRANSISTOR CDA1585BC 9AW TO-92 BCE Marking : CDA 1585 BC ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified) DESCRIPTION SYMBOL
|
Original
|
PDF
|
CDA1585BC
25deg
C-120
|
12CTG045
Abstract: 10MQ030 TQ045
Text: Tape and Reel Information for 10MQ Series PACKAGING DENTIFICATION TAPE DIMENSIONS 41 <0161> Marking and identification Each devices has 3 digits for identifi cation. All 3 digits face the same direction. See the drawing below for the marking code. 12.310.484 5 45 <0 214>
|
OCR Scan
|
PDF
|
10MQ030)
TQ045-004
12CTQ045
D-477
12CTG045
10MQ030
TQ045
|
MARKING 93 SOT89
Abstract: DIN iec 286-3 part 1 smd marking code eg On semiconductor date Code on semiconductor marking code sot SMD MARKING CODE 93 smd marking SOT343 smd sot-89 marking code SOT89 bc smd marking code BA RF
Text: S IE M E N S Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-23, SOT-143, MW6.MW4 Manufacturer EH co Date code Year / Month Type code Example Siemens EH CD 1994, June BCW 66 H Marking Layout SOT-323, SOT-343, SOT-363 Manufacturer
|
OCR Scan
|
PDF
|
OT-23,
OT-143,
OT-323,
OT-343,
OT-363
OD-123,
OD-323
OT-223,
MARKING 93 SOT89
DIN iec 286-3 part 1
smd marking code eg
On semiconductor date Code
on semiconductor marking code sot
SMD MARKING CODE 93
smd marking SOT343
smd sot-89 marking code
SOT89 bc
smd marking code BA RF
|
marking 82 sot343
Abstract: zo 103 ma BFG197W DIN45004B MS80 Ghz dB transistor
Text: Product specification Philips Semiconductors BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. BFG197W BFG197W/X BFG197W/XR
|
OCR Scan
|
PDF
|
BFG197W
BFG197W/X;
BFG197W/XR
OT343
OT343R
BFG197W/X
BFG197W/XR
BFG197W
BFG197W/X
marking 82 sot343
zo 103 ma
DIN45004B
MS80
Ghz dB transistor
|
Untitled
Abstract: No abstract text available
Text: LOW PROFILE SERIES SPECIFICATIONS 75Q and 1 0 0 0 VAC Varistors Recognitions To Safety Agency Standards Maida Style Number Continuous Nominai Size Minimum Marking Applied Voltage Maximum Ratings Transient Energy R69* R65* R66* S66* *ZOV751RA350 ‘ ZOV751RA670
|
OCR Scan
|
PDF
|
X20usec
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 14-099R • Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 14-099R S8 Ordering Code
|
OCR Scan
|
PDF
|
14-099R
Q62702-A0042
14-099R
OT-143
EHA07012
fl535bQ5
|
up/xr+2320
Abstract: No abstract text available
Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold metallization ensures excellent reliability. BFG93AW/X R9 BFG93AW/XR
|
OCR Scan
|
PDF
|
BFG93AW
BFG93AW/X;
BFG93AW/XR
BFG93AW/X
OT343
OT343R
MSB014
up/xr+2320
|
Untitled
Abstract: No abstract text available
Text: Empty Com ponent Plug Housings for Building Custom Circuits Front-entry Plug width 5 mm / 0.197 in or 10 mm / 0.394 in 250 V /4 kV/3 O 6 A max. O 250 V = rated voltage 4 kV — rated surge voltage 3 = pollution degree see also section 10 Marking on both sides
|
OCR Scan
|
PDF
|
hou250
|
