pcb diagram welding inverter
Abstract: CIRCUIT diagram welding inverter MIXA20W1200MC marking W18 g14 DIODE marking C5 marking diode airconditioning inverter circuit WELDING INVERTER DIAGRAM
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Preliminary data Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive
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MIXA20W1200MC
20091002a
pcb diagram welding inverter
CIRCUIT diagram welding inverter
MIXA20W1200MC
marking W18
g14 DIODE marking
C5 marking diode
airconditioning inverter circuit
WELDING INVERTER DIAGRAM
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UC320
Abstract: CIRCUIT diagram welding inverter diode K14
Text: MIXA20W1200MC Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 2.1 V Part name (Marking on product) MIXA20W1200MC O9 P9 L9 S18 W18 A5 E5 I14 C5 G14 K14 A1 E1 K10 C1 G10 H10 Features: Application: Package: • Easy paralleling due to the positive temperature coefficient of the on-state
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MIXA20W1200MC
20110304b
UC320
CIRCUIT diagram welding inverter
diode K14
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MARKING HYNIX
Abstract: MARKING HYNIX Origin Country
Text: HY62LF16206A-LT12C 128Kx16bit full CMOS SRAM Document Title 128K x16 bit 2.5 V Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 01 02 03 Initial Correct Pin Connection Correct Marking Information Correct Pin Configuration
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HY62LF16206A-LT12C
128Kx16bit
120ns
MARKING HYNIX
MARKING HYNIX Origin Country
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SM-1994
Abstract: No abstract text available
Text: HY62LF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 2.5V Super Low Power Full CMOS Slow SRAM Revision History Revision No 03 04 History Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others Add marking information
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HY62LF16101C
64Kx16bit
HY62QF16101C
HY62LF16101C
HY62LF1610F16101C
HYLF611Cc
100ns
SM-1994
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PDF
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Untitled
Abstract: No abstract text available
Text: FLASH AS8FLC1M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10
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AS8FLC1M32
MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC1M32B
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PDF
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hyuf643
Abstract: No abstract text available
Text: HY62UF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 09 Marking Information add tBLZ / tOLZ value is changed Output Load is redefined Isb, Isb1, Vdr, Iccdr are redefined
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HY62UF16403A
256Kx16bit
HY62UF103A
HYUF643A
hyuf643
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PDF
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Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16 54
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MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC1M32
1Mx32,
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PDF
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A20-A11
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC2M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC2M32
I/O16
I/O17
A20-A11
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PDF
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Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC1M32
single120
HIP-66
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PDF
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Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
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AS8FLC1M32
100ns
120ns
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
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PDF
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Untitled
Abstract: No abstract text available
Text: E R C 1 2 i . 2 A I Outline Drawings - M t M m m ? * * - k _ GEN ERAL USE R EC TIFIER DIODE -w¿3 5. — 28MIN — /Q8 20MIN — : Features • •0— Hi gh surge current • 'J V£ M $ A • ffifflfitt ■ S/jv i Marking Compact size, lightweight
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OCR Scan
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28MIN
20MIN
I95t/R89)
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PDF
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Flash
Abstract: AS8FLC2M32 we3 marking AS8FLC2M32BQ
Text: FLASH AS8FLC2M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact Factory Package Ceramic Quad Flat Pack Ceramic Hex Inline Pack MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 78 13 57 14 76 15 55 16 54
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AS8FLC2M32
MIL-PRF-38534,
64Kbyte
AS8FLC2M32B
Flash
AS8FLC2M32
we3 marking
AS8FLC2M32BQ
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V23500-D
Abstract: V23500-D2111-F410
Text: 2 4 3 5 7 6 9 See Detail D¿f A Scale 5:1 2 Space for marking 1 See Detail D A See Detail D2 Detail DAScale 10:1 Detail D2 Scale 10:1 0.76 Scale 2:1 B B Section A - A Scale 10:1 Detail D1 Scale 10:1 C Detail D3 Scale 10:1 I / / 4 V V D V // // // // ' C CVI
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OCR Scan
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V23500-D211
-F210-
SR10-0289-01
WS99/021
WS90/O96
V23500-D
V23500-D2111-F410
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PDF
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Untitled
Abstract: No abstract text available
Text: I o9oooms ~¥ÏÏb 'ON 0NiMVüQ -i-#m m DON DATE REV. “I T ï T T NO. 17.D0O.2OOB 054034 29.Aug.2005 058157 3O.S0p.2OO5 058352 DESCRIPTION S DR. ÜÉ OHK. CHANGED DESIGNATION AND ADDED DUST CAP FINISH CHANGE FROM TIN-LEAD PLATING TO TIN PLATING CORRECT AN ERROR
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OCR Scan
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B5CS08AN
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PDF
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Untitled
Abstract: No abstract text available
Text: FLASH AS8F1M32 FIGURE 1: PIN ASSIGNMENT Top View 1M x 32 FLASH FLASH MEMORY MODULE OPTION • Timing 90ns 120ns 150ns 62 61 65 63 64 67 66 01 02 68 05 03 06 04 60 11 59 12 78 13 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 21
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AS8F1M32
MIL-PRF-38534,
-55oC
125oC
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
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BZT 030
Abstract: XXt sot363 THT bsc 25 TE MARKING CODE 6-PIN sc70-6 marking xH T9T marking 9T MARKING CODE SOT353 xz sot-23 blf 178
Text: CASE OUTLINES AND PACKAGE DIMENSIONS TO−92 TO−226 CASE 29−11 ISSUE AL DATE 03/07/2000 SCALE 1:1 A NOTES: X. DIMENSIONING/AND/TOLERANCING/PER/ANSI YXp.fM6/X9lo. o. CONTROLLING/DIMENSION:/INCH. b. CONTOUR/OF/PACKAGE/BEYOND/DIMENSION/R IS/UNCONTROLLED.
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O-226)
SC-88/SC70-6/SOT-363
BZT 030
XXt sot363
THT bsc 25
TE MARKING CODE 6-PIN
sc70-6 marking xH
T9T marking
9T MARKING CODE SOT353
xz sot-23
blf 178
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LDTA125TWT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTA125TWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTA125TWT1G
LDTA125TWT1G
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EMIF10-LCD02F3
Abstract: EMIF10 LCD02F3 Part Marking STMicroelectronics
Text: EMIF10-LCD02F3 10 line EMI filter and ESD protection for LCD and cameras Main product characteristics: Where EMI filtering in ESD sensitive equipment is required : • LCD for Mobile phones ■ Computers and printers ■ Communication systems ■ MCU Boards
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EMIF10-LCD02F3
EMIF10-LCD02F3
EMIF10
EMIF10 LCD02F3
Part Marking STMicroelectronics
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PDF
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Date Code Marking STMicroelectronics
Abstract: STMicroelectronics marking code date AN1235 AN1751 EMIF10-LCD01C1 EMIF10-LCD01C2 JESD97 LCD for mobile AN-1751
Text: EMIF10-LCD01C2 10 LINE EMI FILTER AND ESD PROTECTION IPAD MAIN PRODUCT CHARACTERISTICS: Where EMI filtering in ESD sensitive equipment is required : • LCD for Mobile phones ■ Computers and printers ■ Communication systems ■ MCU Boards DESCRIPTION
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EMIF10-LCD01C2
EMIF10-LCD01C2
EMIF10
Date Code Marking STMicroelectronics
STMicroelectronics marking code date
AN1235
AN1751
EMIF10-LCD01C1
JESD97
LCD for mobile
AN-1751
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smd marking 35
Abstract: 1SS378 smd diode UM smd diode marking um smd diode UM 85
Text: Diodes SMD Type HIGH SWITCHING DIODE 1SS378 Features Low forward voltage:VF 3 = 0.23 V(Typ) @ IF = 5 mA Absolute M axim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Sym bol Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current
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1SS378
smd marking 35
1SS378
smd diode UM
smd diode marking um
smd diode UM 85
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Untitled
Abstract: No abstract text available
Text: Product specification 1SS378 Features Low forward voltage:VF 3 = 0.23 V(Typ) @ IF = 5 mA Absolute M axim um Ratings Ta = 25 Param eter Maxim um (peak) reverse voltage Sym bol Rating Unit V RM 85 V Reverse voltage VR 80 V Maxim um (peak) forward current I FM
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1SS378
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE SRAM 512Kx40-SOP Static Ram MODULE 3DSR20M40VS6507 20 Mbit SRAM organized as 512Kx40, based on 256Kx16 Pin Assignment Top View SOP 84 (Pitch : 0.508 mm) Features - Fast Access Time : 12ns. - Power Supply 3.3V - Radiation Characteristics: Total Dose: 100Krad(Si)
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512Kx40-SOP
3DSR20M40VS6507
512Kx40,
256Kx16
100Krad
110MeV
100nF
MMXX00000000XXX
3DFP-0507-REV
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PDF
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1SS377
Abstract: marking O9
Text: Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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1SS377
OT-23
Te200*
1SS377
marking O9
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Untitled
Abstract: No abstract text available
Text: Product specification 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01
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1SS377
OT-23
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