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    MARKING N50D Search Results

    MARKING N50D Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    MARKING N50D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    n50d

    Abstract: marking n50d
    Text: A Product Line of Diodes Incorporated ZXT13N50DE6 ADVANCE INFORMATION 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 4A Continuous Collector Current ICM = 10A Peak Pulse Current


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    ZXT13N50DE6 100mV AEC-Q101 J-STD-020 DS33636 n50d marking n50d PDF

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXT13N50DE6 ADVANCE INFORMATION 50V NPN LOW SATURATION SWITCHING TRANSISTOR Features Mechanical Data • BVCEO > 50V  Case: SOT26  IC = 4A Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound


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    ZXT13N50DE6 J-STD-020 100mV DS33636 PDF

    Untitled

    Abstract: No abstract text available
    Text: ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


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    ZXT13N50DE6 OT23-6 OT23-6 PDF

    n50d

    Abstract: ZXT13N50DE6 ZXT13N50DE6TA ZXT13N50DE6TC DSA0037462
    Text: ZXT13N50DE6 SuperSOT4 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 36m ; IC= 4A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original
    ZXT13N50DE6 OT23-6 OT23-6 n50d ZXT13N50DE6 ZXT13N50DE6TA ZXT13N50DE6TC DSA0037462 PDF