Untitled
Abstract: No abstract text available
Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20080612 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5
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MMBT5550
MMBT5551
MMBTA42
MMBT6517
MMBT5400
MMBT5401
MMBTA92
MMBT6520
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Untitled
Abstract: No abstract text available
Text: SMD High Voltage Transistors Part No. MMBT5550 MMBT5551 MMBTA42 MMBT6517 MMBT5400 MMBT5401 MMBTA92 MMBT6520 20070515 Device VCEO Marking Polarity Code V 1F 140 G1 160 NPN 1D 300 1Z 350 K2 120 2L 150 PNP 2D 300 2Z 350 hFE @ VCE & IC IC (A) 0.6 0.6 0.5 0.5
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MMBT5550
MMBT5551
MMBTA42
MMBT6517
MMBT5400
MMBT5401
MMBTA92
MMBT6520
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT6517 Features • Marking Code:MMBT6517=1Z NPN High Voltage Transistors Maximum Ratings Symbol VCEO VCBO VEBO IB IC PC TJ TSTG Rating
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MMBT6517
MMBT6517
100uAdc,
10uAdc,
250Vdc
10Vdc)
10mAdc,
30mAdc,
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT6517 Features • Marking Code:MMBT6517=1Z NPN High Voltage Transistors Maximum Ratings Symbol VCEO VCBO VEBO IB IC PC TJ TSTG Rating
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MMBT6517
MMBT6517
100uAdc,
10uAdc,
250Vdc
10Vdc)
10mAdc,
30mAdc,
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MMBT6517
Abstract: marking mmbt6517
Text: Transistors SMD Type High Voltage Transistors MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector
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MMBT6517
OT-23
MMBT6517
marking mmbt6517
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Untitled
Abstract: No abstract text available
Text: Product specification MMBT6517 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN Silicon +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25
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MMBT6517
OT-23
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT6517 Features • x Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1
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MMBT6517
100uAdc,
10uAdc,
250Vdc
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MMBT6517LT
Abstract: No abstract text available
Text: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 350 Vdc Collector–Base Voltage VCBO 350 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc Collector Current — Continuous
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MMBT6517LT1
236AB)
1/2MSD7000
MMBT6517LT
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msd7000
Abstract: MMBT6517LT1
Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage
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MMBT6517LT1
236AB)
msd7000
MMBT6517LT1
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Untitled
Abstract: No abstract text available
Text: High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage V 5.0 Vdc EBO Base Current
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MMBT6517LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: High Voltage Transistors NPN Silicon MMBT6517LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 350 Vdc Collector–Base Voltage V CBO 350 Vdc Emitter–Base Voltage V 5.0 Vdc EBO Base Current
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MMBT6517LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6517LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO 350 Vdc Collector – Base Voltage
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MMBT6517LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 350 Vdc Collector −Base Voltage VCBO 350 Vdc Emitter −Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc
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MMBT6517LT1
236AB)
15the
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Untitled
Abstract: No abstract text available
Text: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage Rating VCEO 350 V Collector − Base Voltage
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MMBT6517LT1G
MMBT6517LT1/D
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MMBT6517LT1G
Abstract: MMBT6517LT3G marking code 1z
Text: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 350 V Collector − Base Voltage
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MMBT6517LT1G
MMBT6517LT1/D
MMBT6517LT1G
MMBT6517LT3G
marking code 1z
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Untitled
Abstract: No abstract text available
Text: MMBT6517LT1G High Voltage Transistor NPN Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 1 BASE MAXIMUM RATINGS Symbol Value Unit Collector − Emitter Voltage VCEO 350 V Collector − Base Voltage
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MMBT6517LT1G
MMBT6517LT1/D
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MMBT6517LT1
Abstract: MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G SOT23 1Z
Text: MMBT6517LT1 High Voltage Transistor NPN Silicon Features •ăPb-Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collectorā - āEmitter Voltage VCEO 350 Vdc Collectorā -āBase Voltage VCBO 350 Vdc
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MMBT6517LT1
MMBT6517LT1/D
MMBT6517LT1
MMBT6517LT1G
MMBT6517LT3
MMBT6517LT3G
SOT23 1Z
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MMBT6517LT1
Abstract: MMBT6517LT1G MMBT6517LT3 MMBT6517LT3G 300MS
Text: MMBT6517LT1 High Voltage Transistor NPN Silicon Features • Pb−Free Packages are Available http://onsemi.com COLLECTOR 3 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 350 Vdc Collector − Base Voltage VCBO 350 Vdc Emitter − Base Voltage
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MMBT6517LT1
MMBT6517LT1/D
MMBT6517LT1
MMBT6517LT1G
MMBT6517LT3
MMBT6517LT3G
300MS
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NSVMMBT6517LT1G
Abstract: No abstract text available
Text: MMBT6517L, NSVMMBT6517L High Voltage Transistor NPN Silicon http://onsemi.com Features • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
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MMBT6517L,
NSVMMBT6517L
MMBT6517LT1/D
NSVMMBT6517LT1G
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MMBT6517LT1
Abstract: No abstract text available
Text: ON Semiconductort High Voltage Transistor MMBT6517LT1 NPN Silicon 3 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 350 Vdc Collector–Base Voltage VCBO 350 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Base Current IB 250 mAdc Collector Current — Continuous
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MMBT6517LT1
236AB)
r14525
MMBT6517LT1/D
MMBT6517LT1
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marking 8b sot-23
Abstract: MMBT6517LT1
Text: MOTOROLA Order this document by MMBT6517LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor MMBT6517LT1 NPN Silicon COLLECTOR 3 Motorola Preferred Device 1 BASE 3 2 EMITTER MAXIMUM RATINGS 1 2 Rating Symbol Value Unit Collector – Emitter Voltage VCEO
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MMBT6517LT1/D
MMBT6517LT1
236AB)
MMBT6517LT1/D*
marking 8b sot-23
MMBT6517LT1
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BC547 sot package sot-23
Abstract: BC337 BC547 2N2484 motorola MSB81T1 zt751 pin configuration NPN transistor BC547 sot-23 MMBF4856 SOT-223 P1f P1F motorola 2N2222A plastic package
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC5001T1
MDC3105LT1
BC547 sot package sot-23
BC337 BC547
2N2484 motorola
MSB81T1
zt751
pin configuration NPN transistor BC547 sot-23
MMBF4856
SOT-223 P1f
P1F motorola
2N2222A plastic package
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BC337 BC547
Abstract: MSB81T1 MBT3904DW9T1 marking 6AA SOD MVAM115 automatic stabilizer circuit diagram range 210 to 250 volts zt751 MBT3904DW9 transistor 2N4125 CT BC547 TRANSISTOR PIN DIAGRAM
Text: Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola’s GreenLine portfolio of devices. They feature energy–conserving traits superior to those of our existing line of standard parts for the same usage. GreenLine devices can actually help reduce the
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MDC5000T1
MDC3105LT1
BC337 BC547
MSB81T1
MBT3904DW9T1
marking 6AA SOD
MVAM115
automatic stabilizer circuit diagram range 210 to 250 volts
zt751
MBT3904DW9
transistor 2N4125
CT BC547 TRANSISTOR PIN DIAGRAM
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G1 TRANSISTOR SOT 23 PNP
Abstract: transistor marking 2L
Text: SOT-23 TRANSISTORS continued Darlingtons The following table is a listing of small-signal devices that have very high hpE and input impedance characteristics. These devices utilize monolithic, cascade transistor construction. Pinout: 1-Base, 2-Emitter, 3-Collector
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OT-23
MMBTA14LT1
MMBTA13LT1
MMBTA64LT1
MMBT6517LT1
MMBTA42LT1
MMBT5551LT1
MMBT6520LT1
MMBTA92LT1
MMBT5401LT1
G1 TRANSISTOR SOT 23 PNP
transistor marking 2L
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