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    MARKING M4A GENERAL SEMICONDUCTOR Search Results

    MARKING M4A GENERAL SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING M4A GENERAL SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MV209 diode

    Abstract: mv209 DIODE M4A marking M4A general semiconductor MARKING C25 SOT23 M4A sot23
    Text: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies


    Original     		PDF MMBV109LT1 MV209 MMBV109LT1, MV209 MV209 diode DIODE M4A marking M4A general semiconductor MARKING C25 SOT23 M4A sot23

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor Power TMOS¨ MOSFETs and Diodes Power TMOS¨ MOSFETs Continued TO-247 Isolated Mounting Hole TMOS V (Continued) TO-247 Ñ N-Channel TMOS V ÑTO-220AB Mfr.Õs Type4 V(BR)DSS (V) Min. RDS(on) (½) Max. 1000 800 600 500 500 400 400 250 200


    Original     		PDF O-247 O-247 O-220AB MTW10N100E MTP3055V MTW7N80E MTP15N06V MTW8N60E MTP36N06V MTW14N50E

    DIODE M4A

    Abstract: MV209 MMBV109LT1 "Variable Capacitance Diodes" MV209 diode MV209 equivalent MMBV109LT1G MMBV109LT3 MMBV109LT3G MV209G
    Text: MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies


    Original     		PDF MMBV109LT1, MV209 MMBV109LT1 MMBV109LT1/D DIODE M4A MV209 MMBV109LT1 "Variable Capacitance Diodes" MV209 diode MV209 equivalent MMBV109LT1G MMBV109LT3 MMBV109LT3G MV209G

    M4A sot23

    Abstract: DIODE M4A MV209 MV209 diode marking code m4a
    Text: MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies


    Original     		PDF MMBV109LT1, MV209 MMBV109LT1 MMBV109LT1/D M4A sot23 DIODE M4A MV209 MV209 diode marking code m4a

    DIODE M4A

    Abstract: M4A sot23
    Text: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies


    Original     		PDF MMBV109LT1 MV209 MMBV109LT1, MV209 DIODE M4A M4A sot23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT4401 Features • • x • x • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation


    Original     		PDF MMBT4401 OT-23 350mWatts 600mA OT-23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT4401 Features • • x • x • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation


    Original     		PDF MMBT4401 OT-23 350mWatts 600mA OT-23

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT4401 Features • • • x • x • Halogen free available upon request by adding suffix "-HF" Surface Mount SOT-23 Package


    Original     		PDF MMBT4401 OT-23 350mWatts 600mA OT-23

    MA793

    Abstract: MA3Z792 MA3Z793 MA792
    Text: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 3 5˚ • Two MA3Z792 (MA792) is contained in one package (series connection) • IF(AV) = 100 mA rectification is possible


    Original     		PDF MA3Z793 MA793) MA3Z792 MA792) SC-79 MA793 MA3Z792 MA3Z793 MA792

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package (series


    Original     		PDF MA3X791 MA791) MA3X786 MA786)

    DIODE M4A

    Abstract: MA791 MA3X786 MA3X791 MA786
    Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package (double


    Original     		PDF MA3X791 MA791) MA3X786 MA786) DIODE M4A MA791 MA3X786 MA3X791 MA786

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT4401 Features • • • x • x • • • Halogen free available upon request by adding suffix "-HF"


    Original     		PDF MMBT4401 OT-23 350mWatts 600mA OT-23

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3Z792 (MA792) is contained in one package (series connection)


    Original     		PDF 2002/95/EC) MA3Z793 MA793) MA3Z792 MA792)

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3Z792 (MA792) is contained in one package (series connection)


    Original     		PDF MA3Z793 MA793) MA3Z792 MA792) 12nteed

    DIODE M4A

    Abstract: Panasonic super a series MA3Z793 MA793
    Text: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 For super-high speed switching circuit For small current rectification + 0.1 • Two MA3Z792s diodes (series connection) are contained in the Smini type 3-pin package


    Original     		PDF MA3Z793 MA793) MA3Z792s SC-70nductor DIODE M4A Panasonic super a series MA3Z793 MA793

    MA3X786

    Abstract: MA3X791 MA786 MA791
    Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Repetitive peak reverse-voltage


    Original     		PDF MA3X791 MA791) SC-59 MA3X786 MA3X791 MA786 MA791

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2


    Original     		PDF 2002/95/EC) MA3X791 MA791) MA3X786 MA786)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z7930G Silicon epitaxial planar type For super high speed switching For small current rectification • Features ■ Package • Two MA3Z792 (MA792) is contained in one package (series connection)


    Original     		PDF 2002/95/EC) MA3Z7930G MA3Z792 MA792)

    DIODE M4A

    Abstract: Panasonic super a series MA3X791 MA791
    Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single Unit VR 30 V VRRM 30 V IFM 300 mA Series*2


    Original     		PDF MA3X791 MA791) O-236 SC-59 MA3X786s DIODE M4A Panasonic super a series MA3X791 MA791

    MA3X786

    Abstract: MA3X791 MA786 MA791
    Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Repetitive peak reverse-voltage


    Original     		PDF MA3X791 MA791) SC-59 MA3X786 MA3X791 MA786 MA791

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2


    Original     		PDF 2002/95/EC) MA3X791 MA791) MA3X786 MA786)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3Z792 (MA792) is contained in one package (series connection)


    Original     		PDF 2002/95/EC) MA3Z793 MA793) MA3Z792 MA792)

    MA3Z792

    Abstract: MA3Z793 MA792 MA793 SKH00098CED
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te


    Original     		PDF 2002/95/EC) MA3Z793 MA793) SC-79 MA3Z792 MA3Z793 MA792 MA793 SKH00098CED

    DIODE M4A

    Abstract: j4a diode C25F
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes D esign ed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechnaical tuning methods. * Motorola Preferrod Devices


    OCR Scan     		PDF MBV109T1 MMBV109LT1* MV209* SC-70/SOT-323 OT-23 DIODE M4A j4a diode C25F