MARKING M3C Search Results

MA740

Abstract: Marking m3c
Contextual Info: 2SK1606 Schottky Barrier Diodes SBD MA740 Silicon epitaxial planer type 2.8 –0.3 Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current Single Double Single Double Single Double VRRM Storage temperature

Marking m3c

Abstract: m3c 55 MA3X740 diode M3C 055
Contextual Info: Schottky Barrier Diodes SBD MA3X740 Silicon epitaxial planar type Unit : mm + 0.2 For super high speed switching circuit For small current rectification 2.8 − 0.3 + 0.25 1.45 1 + 0.1 3 2 Repetitive peak reverse voltage Average forward current Single Peak forward

Contextual Info: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series

IR 50

Abstract: JIS C 1102 diodes ir MARKING 103 MA3X721 MA3X740 MA721 MA740
Contextual Info: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series

Contextual Info: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series

MA3X721

Abstract: MA3X740 MA721 MA740
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

MA3X721

Abstract: MA3X740 MA721 MA740
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc

ETC 529 DIODE

Abstract: MA3X740 MA740 panasonic ma diodes sc-59 Marking
Contextual Info: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Repetitive peak reverse voltage Average forward current Single Peak forward current Single VR 30 V VRRM 30 V IF(AV) 200 mA Double*1 Single Non-repetitive peak forward surge current*2 Double*1

Contextual Info: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series

MA3X721

Abstract: MA3X740 MA721 MA740
Contextual Info: Schottky Barrier Diodes SBD MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X721 (MA721) is contained in one package (series

MA3X721

Abstract: MA3X740 MA721 MA740
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

HS2065DC

Abstract: QHS25 QHS25-033 800uH
Contextual Info: QHS25 SERIES High Efficiency 25A Quarter-Brick Converters Features: 9 Very High Efficiency: to 88% 9 Very High Density: 25A in Quarter-brick 9 1.8V, 2.5V, 3.3V Models 9 Industry-Standard Pin-out Parameter Input Conditions Input Voltage Vin Input Ripple Current

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X740 (MA740) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2

4c1024

Abstract: ofwe LTWE AS4C1024 C1024 CSR1010
Contextual Info: ASO AS4C1024 883C 1 MEG X 1 DRAM AUSTIN SEMICONDUCTOR, INC. 1 MEG DRAM 1 DRAM X FAST PAGE MODE i AVAILABLE AS MILITARY SPECIFICATIONS -PIN ASSIGNMENT Top View • M il .-STD-883 18-Pin DIP • Industry standard pinout and tim ing • All inputs, outputs and clocks are fully TT1.

E174-E175

Abstract: E727 E165-E166 Le3011-11 SLE19 E647-E DLE24 N755 E583 e773
Contextual Info: INCH-POUND MIL-M-38510/140A 22 December 2004 SUPERSEDING MIL-M-38510/140 31 October 1986 MILITARY SPECIFICATION MICROCIRCUITS, LINEAR, MONOLITHIC AND HYBRID SILICON, MICROPROCESSOR COMPATIBLE, 12 BIT ANALOG-TO-DIGITAL CONVERTERS Reactivated after 22 December 2004 and may be used for either new or existing design acquisitions.

smd m3c

Contextual Info: MICRON TECHNOLOGY INC S5E » • blllSkT QQD5flSb Mlfi ■ fIRN M T52C9Ü20 883C 2K x 9 F IFO MICRON MILITARY FIFO 2K x 9 FIFO AVAILABLE AS MILITARY SPECIFICATIONS P IN A S S IG N M E N T (Top View 28-Pin D IP (D15/D10) vfi 1 D8 I 2 D3I 3 D2I 4 01 15 DO I 6

B33A10

Abstract: R6095 Q031 THOMSON-CSF PRODUCTS A24C11
Contextual Info: 's i m m m ê m m m w m m TSPC860 ü b 32 BIT QUAD INTEGRATED POWER QUICC COMMUNICATION CONTROLLER D ESC RIPTIO N The TSPC860 PowerPC” QUad Integrated Communication Controller Power QUICC™ is a versatile one-chip Integrated microprocessor and peripheral combination that can be used

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

PBD14

Abstract: PBD26 PBD24 PBD12 ALLAYER COMMUNICATIONS PBD30 ETD12 PBD18 PBD-28 ETD10
Contextual Info: AL15 Revision 1.0 5-PORT LOW COST 10/100 SWITCH WITH RMII • • • • • • • • Supports five 10/100 Mbit/s Ethernet ports with RMII interface Capable of trunking up to 500 Mbit/s link Full- and half-duplex mode operation Speed auto-negotiation through MDIO

ALLAYER COMMUNICATIONS

Abstract: MG802C256q-10 AL102A PBD18 PBD10 PBD20
Contextual Info: AL102A Revision 1.0 8 PORT LOW COST 10/100 SWITCH • • • • • • • • • Supports eight 10/100 Mbit/s Ethernet ports with MII interface Capable of trunking up to 800 Mbit/s link Full- and half-duplex mode operation Speed auto-negotiation through MDIO

ALLAYER COMMUNICATIONS

Abstract: MG802C256q-10 AL102A AL103 PBD18 PBD20 SUPERMAC
Contextual Info: AL103 Revision 1.0 8 PORT LOW COST 10/100 SWITCH • • • • • • • • • • • Supports 8 10/100 Mbit/s MII ports Capable of trunking up to 800 Mbit/s link Trunk fail-over feature Full- and half-duplex mode operation Speed auto-negotiation through MDIO

PBD14

Abstract: MG802C256q-10 AL104 PBD10 PBD18 PBD20 ETA12 SFD 313 ETD5 PBD17
Contextual Info: AL104 Revision 1.0 8 PORT LOW COST 10/100 SWITCH WITH RMII • • • • • • • • • Supports 8 10/100 Mbit/s Ethernet ports with RMII interface Capable of trunking up to 800 Mbit/s link Trunk fail-over feature Full- and half-duplex mode operation

Contextual Info: F28M35H52C, F28M35H22C F28M35M52C, F28M35M22C, F28M35M20B F28M35E20B www.ti.com SPRS742F – JUNE 2011 – REVISED APRIL 2013 Concerto Microcontrollers Check for Samples: F28M35H52C 1 F28M35x Concerto MCUs 1.1 Features • Master Subsystem — ARM Cortex™-M3