gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
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Original
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QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
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PDF
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XMFP1-M3
Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••
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Original
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Rating3-5698410
XMFP1-M3
D 8243 HC
E176
e170315
OF FET E176
FET E119
E176 field effect transistor
E176 fet
mc34063 step down external transistor
28428
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PDF
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transistor smd CF rs
Abstract: transistor smd marking mx transistor smd cf CF 750
Text: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V
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Original
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OT-143
Q62702-F1391
P-SOT143-4-1
EHT08531
GPS05559
transistor smd CF rs
transistor smd marking mx
transistor smd cf
CF 750
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PDF
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transistor smd CF rs
Abstract: transistor smd marking mx smd marking CF marking K gaas fet gaas fet marking B FET GAAS marking a MARKING CF smd marking cf rl MMIC marking CODE cf RF smd code SOT143 Package
Text: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V
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Original
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OT-143
Q62702-F1391
P-SOT143-4-1
EHT08531
GPS05559
transistor smd CF rs
transistor smd marking mx
smd marking CF
marking K gaas fet
gaas fet marking B
FET GAAS marking a
MARKING CF
smd marking cf rl
MMIC marking CODE cf
RF smd code SOT143 Package
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PDF
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Untitled
Abstract: No abstract text available
Text: P r e l i m in a r y d a t a s h e e t , B G V 5 0 3 , Ma y 2 0 0 2 BGV 503 Negative Voltage Generator for biasing GaAs FETs and Po w e r A m p l i f ie r s W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-05-16
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Original
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D-81541
EHT08520
EHT08521
BGV503
P-TSSOP-10
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PDF
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BGV503
Abstract: No abstract text available
Text: Data sheet, BGV503, November 2002 BGV503 Negative Voltage Generator for biasing GaAs FETs and Power Amplifiers Wireless Si l i c on Di s c rete s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-11-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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Original
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BGV503,
BGV503
D-81541
EHT08520
EHT08521
P-TSSOP-10
BGV503
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PDF
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Untitled
Abstract: No abstract text available
Text: P r e l i m in a r y d a t a s h e e t , B G V 5 0 3 , J u n e 2 0 0 2 BGV 503 Negative Voltage Generator for biasing GaAs FETs and Po w e r A m p l i f ie r s W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-06-11
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Original
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D-81541
EHT08520
EHT08521
BGV503
P-TSSOP-10
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PDF
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FET GAAS marking a
Abstract: BGV503
Text: Data sheet, BGV503, November 2002 BGV503 Negative Voltage Generator for biasing GaAs FETs and Power Amplifiers Wireless Si l i c on Di s c rete s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-11-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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Original
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BGV503,
BGV503
D-81541
EHT08520
EHT08521
P-TSSOP-10
FET GAAS marking a
BGV503
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PDF
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transistor marking E39
Abstract: E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72
Text: GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS Series XMFS Series are designed for low noise applications up to C-band to 6GHz . These devices are supplied in the plastic packages. (SOT-143) cFEATURES 1. Low Noise Figure. 2. High Associated Gain.
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Original
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OT-143)
transistor marking E39
E1491
E407 transistor
E391
E308
E138
e696
E302
e798
marking E72
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PDF
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marking code C1d SMD
Abstract: smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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Original
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503/BGV
P-TSSOP-10-1
GPS09184
marking code C1d SMD
smd C1D
lowpassfilter
marking bgv
MARKING CODE SMD IC 503
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PDF
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marking code C1d SMD
Abstract: smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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Original
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503/BGV
P-TSSOP-10-1
GPS09184
marking code C1d SMD
smd C1D
Q62702-L0131
Q62702-L0132
marking bgv
P-TSSOP-10-1
5v regulator
c2pr
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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Original
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503/BGV
P-TSSOP-10-2
GPS09230
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PDF
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MARKING CF
Abstract: siemens gaas fet siemens PG 750 Q62702-F1391 PG 750 8 PIN marking 340 mmic MMIC SOT 89 marking CODE MMIC marking CODE 06
Text: CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment
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Original
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Q62702-F1391
100pF
MARKING CF
siemens gaas fet
siemens PG 750
Q62702-F1391
PG 750 8 PIN
marking 340 mmic
MMIC SOT 89 marking CODE
MMIC marking CODE 06
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PDF
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transistor smd code marking 561
Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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Original
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OT-223
Q62702-L99
P-SOT223-4-2
EHT08941
GPS05560
transistor smd code marking 561
sot-223 MARKING CODE 718
smd marking 271 Sot
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PDF
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transistor smd code marking 561
Abstract: GPS05560 Q62702-L99 s-parameter s11 s12 s21
Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,
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Original
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Q62702-L99
OT-223
P-SOT223-4-2
EHT08941
GPS05560
transistor smd code marking 561
GPS05560
Q62702-L99
s-parameter s11 s12 s21
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PDF
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WL431003667
Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,
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Original
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OT-223
Q62702-L94
P-SOT223-4-2
GPS05560
WL431003667
TRANSISTOR SMD MARKING CODE 703
TRANSISTOR SMD MARKING CODE 723
smd transistor marking p1
TRANSISTOR SMD MARKING CODE 512
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PDF
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gaas fet marking AR
Abstract: No abstract text available
Text: Infineon tei hnoiosi*» GaAs Support 1C BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips - BGV 503, BGV 903 - for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s
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OCR Scan
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503/BGV
111111i
gaas fet marking AR
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PDF
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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OCR Scan
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PDF
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MMIC marking code R
Abstract: cf rt marking code
Text: Infineon ♦Bihncloçjiâï GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LIMA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current
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OCR Scan
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Q62702-F1391
P-SOT143-4-1
MMIC marking code R
cf rt marking code
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PDF
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Siemens A 1458
Abstract: FET marking code 365
Text: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,
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OCR Scan
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CLY15
Q62702-L99
Siemens A 1458
FET marking code 365
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PDF
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MMIC "SOT 89" marking
Abstract: marking HLEH Siemens MMIC MMIC marking code GA
Text: SIEM EN S CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure
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OCR Scan
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VPS05178
Q62702-F1391
MMIC "SOT 89" marking
marking HLEH
Siemens MMIC
MMIC marking code GA
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PDF
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CLY10
Abstract: No abstract text available
Text: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J
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OCR Scan
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CLY10
Q62702-L94
CLY10
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PDF
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MMIC marking CODE cf
Abstract: ma com 4 pin mmic A7560
Text: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V
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OCR Scan
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VPS05178
Q62702-F1391
Rn/50Q
MMIC marking CODE cf
ma com 4 pin mmic
A7560
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PDF
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transistor marking YD ghz
Abstract: EHT07317
Text: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,
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OCR Scan
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Q62702-F1215
P-SOT143-4-1
EHT07327
transistor marking YD ghz
EHT07317
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PDF
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