MARKING IN3 Search Results

YSI 400

Abstract: act test M4DL-ACT-10 M4DL-ACT-11 M4DL-ACT-12 M4DL-ACT-30 M4DL-ACT-35 M4DL-ACT-40 M4DL-ACT-45 M4DL-ACT-50
Contextual Info: DESIGN NOTES continued OPERATING SPECIFICATIO N S Marking consists of manufacturer's name, logo (EC^J, part number, term inal id e n tifica tio n and date code of manufacture. All marking is applied by silk screen process using white epoxy paint in accordance with MIL-STD-130, to meet the

QFN-32 footprint

Abstract: TRANSISTOR FS 2025 32 pins qfn 5x5 footprint NB7V572M PRBS23 QFN32 NB7VQ572M 2825 qfn jedec package QFN-32 FOOTPRINT
Contextual Info: NB7VQ572M 1.8V / 2.5V /3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB7VQ572M is a high performance differential 4:1 Clock /

Contextual Info: NB7VQ572M 1.8V / 2.5V /3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB7VQ572M is a high performance differential 4:1 Clock /

9RC6066

Abstract: BOSCH 0 212 912 001 TDA1047 Bosch alternator diode TDA3541 TDA3520 B250/220-10 TDA3510 TDA1519 tda1044
Contextual Info: Frames of designations and their marking 201.12-1 Dip-tab12 « General director: 8342 253890 « Technical director: (8342) 254139 « Commercial director: (8342) 253876 « Financial director: (8342) 254166 ¬ FAX: (8342) 253890 2202.12-1 Quip-tab12 Integrated circuit (IC)

5800c

Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Contextual Info: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V

bios programmer

Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Contextual Info: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP

block diagram of crusoe processor

Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Contextual Info: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz

NB6L572M

Contextual Info: NB6LQ572M 2.5V / 3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB6LQ572M is a high performance differential 4:1 Clock / Data input multiplexer and a 1:2 CML Clock / Data fanout buffer that

QFN-32 footprint

Abstract: 32 pins qfn 5x5 footprint marking dj2 QFN-32 NB6VQ572MMNG PRBS23 QFN32 NB7V572M
Contextual Info: NB6VQ572M 1.8V / 2.5V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB6VQ572M is a high performance differential 4:1 Clock / Data input multiplexer and a 1:2 CML Clock / Data fanout buffer that

Contextual Info: NB6VQ572M 1.8V / 2.5V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB6VQ572M is a high performance differential 4:1 Clock / Data input multiplexer and a 1:2 CML Clock / Data fanout buffer that

32 pins qfn 5x5mm footprint

Abstract: QFN-32 footprint PRBS23 QFN32 NB6L572M
Contextual Info: NB6LQ572M 2.5V / 3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB6LQ572M is a high performance differential 4:1 Clock / Data input multiplexer and a 1:2 CML Clock / Data fanout buffer that

EN29LV040A-70

Abstract: EN29LV040A EN29LV040 cFeon
Contextual Info: EN29LV040A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

cFeon EN29

Abstract: cfeon en29lv320ab cFeon EN29LV320A cFeon EN eon en29
Contextual Info: EN29LV320A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

cFeon

Abstract: cfeon 32 EN29LV010
Contextual Info: EN29LV010 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

SMC - SY5120

Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Contextual Info: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based

Si5330A-A00200-GM

Contextual Info: Si5330 1 . 8 / 2 . 5 / 3 . 3 V L O W - J I T T E R, L O W - S K EW C L O C K B U F F E R / L E V E L TR A N S L A T O R Features 18 OEB 19 CLK1A 17 20 CLK1B 16 21 VDDO1 VDDO2 CLK2A CLK2B GND GND RSVD_GND 7 VDD RSVD_GND 6 Functional Block Diagram 22 15 IN3

NRTL

Abstract: d496 P024F048T12AL P036F048T12AL P045F048T32AL P048F048T12AL P048F048T24AL V048F015T100 V048F020T080 V048F030T070
Contextual Info: V•I Chip PRM Regulator and VTM Current Multiplier TM TM 6,73 0.265 0816 US S • Power Density > 1000 W/in3 • Regulation 0.2% Remote Sense NRTL • Low profile 0.265” C • ZVS buck-boost regulator (PRM) 22,0 0.87 MADE IN USA • High efficiency up to 97%

RE40

Abstract: NRTL P024F048T12AL v048t P036F048T12AL P048F048T12AL P048F048T24AL V048F015T100 D496 VIV0005TFJ
Contextual Info: V•I Chip PRM Regulator and VTM Current Multiplier TM TM 6,73 0.265 0816 US S • Power Density > 1000 W/in3 • Regulation 0.2% Remote Sense NRTL • Low profile 0.265” C • ZVS buck-boost regulator (PRM) 22,0 0.87 MADE IN USA • High efficiency up to 97%

Contextual Info: V•I Chip PRM Regulator and VTM Current Multiplier TM TM 6,6 0.26 0816 US S • Power Density > 1000 W/in3 • Regulation 0.2% Remote Sense NRTL • Low profile 0.26” C • ZVS buck-boost regulator (PRM) 22,0 0.87 MADE IN USA • High efficiency up to 97%

AP8265VIDE323P

Abstract: D496
Contextual Info: V•I Chip PRM Regulator and VTM Current Multiplier TM TM 6,6 0.26 0816 US S • Power Density > 1000 W/in3 • Regulation 0.2% Remote Sense NRTL • Low profile 0.26” C • ZVS buck-boost regulator (PRM) 22,0 0.87 MADE IN USA • High efficiency up to 97%

Contextual Info: DCR DCR01 Series 01 DCR 01 SBVS013C – OCTOBER 2001 – REVISED MAY 2003 Miniature, 1W Isolated REGULATED DC/DC CONVERTERS FEATURES APPLICATIONS ● UL1950 RECOGNIZED ● ● ● ● ● DIP-18, SO-28 ● 53W/in3 3.3W/cm3 POWER DENSITY ● DEVICE-TO-DEVICE SYNCHRONIZATION

BCM48BH120T120A00

Abstract: B048F030T21 B048F040T20 B048F060T24 B048F080T24 B048F096T24 B048F120T30 B048F160T24 B048F480T30
Contextual Info: V•I Chip BCM Bus Converter RoHS • Input: 48 V • Isolation: 2,250 Vdc • Power Density: >1000 W/in3 • Footprint: 0.56 in2 / 1.08 in2 NRTL S C MADE IN USA • Current sharing: 5% BCM • Efficiency: up to 96% US 22,0 0.87 U.S. PATS. LISTED ON PACKING MATERIALS & DATASHEETS

B048F030T21

Abstract: B048F040T20 B048F060T24 B048F080T24 B048F096T24 B048F120T30 B048F160T24 VIB0101THJ
Contextual Info: V•I Chip BCM Bus Converter • Current sharing: 5% • Input: 48 V • Isolation: 2,250 Vdc • Power Density: >1000 W/in3 • Footprint: 0.56 in2 / 1.08 in2 0812 RoHS US S NRTL C AP8265VIDE213P VIB0101THJ • Efficiency: up to 96% MADE IN USA 22,0 0.87

BCM48BH120T120A00

Contextual Info: V•I Chip BCM Bus Converter • Current sharing: 5% • Input: 48 V • Isolation: 2,250 Vdc • Power Density: >1000 W/in3 • Footprint: 0.56 in2 / 1.08 in2 0812 RoHS US S NRTL C AP8265VIDE213P VIB0101THJ • Efficiency: up to 96% MADE IN USA 22,0 0.87