Untitled
Abstract: No abstract text available
Text: J105 / J106 / J107 N-Channel Switch Description This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 59. Ordering Informations Part Number Marking J105 J105 J106 J106 J107 J107
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MMBFJ305
Abstract: No abstract text available
Text: MMBFJ305 N-Channel RF Amplifier SOT-23 Features G • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50. S Marking : 6Q D Note : Drain & Source are interchangeable.
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MMBFJ305
OT-23
MMBFJ305
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MMBFJ305
Abstract: RF POWER marking 556
Text: MMBFJ305 N-Channel RF Amplifier SOT-23 Features G • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50. S Marking : 6Q D Note : Drain & Source are interchangeable.
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MMBFJ305
OT-23
MMBFJ305
RF POWER marking 556
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J201
Abstract: MMBFJ201
Text: J201 - J202 / MMBFJ201 - MMBFJ203 N-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from Process 52. TO-92 SOT-23 3 2 Marking J201
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MMBFJ201
MMBFJ203
OT-23
MMBFJ201
MMBFJ202
MMBFJ203
J201
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J201
Abstract: MMBFJ203 J202 MMBFJ201 2J201 MMBFJ202 marking IGF
Text: J201 - J202 / MMBFJ201 - MMBFJ203 N-Channel General Purpose Amplifier • This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. • Sourced from Process 52. TO-92 SOT-23 3 2 Marking J201
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MMBFJ201
MMBFJ203
OT-23
MMBFJ201
MMBFJ202
MMBFJ203
J201
J202
2J201
MMBFJ202
marking IGF
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PF5103
Abstract: No abstract text available
Text: PF5103 tm N-Channel Switch Features • This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51. TO-92 1 2 3 Marking : PF5103 1. Drain 2. Source 3. Gate Absolute Maximum Ratings *
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PF5103
PF5103
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smd hee
Abstract: smdj18ca
Text: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 3000 Watt Peak Power ■ Dimension Dim SMD DO-214AB ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 6.60 7.11 0.260 0.280 B 5.59 6.22 0.220
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DO-214AB)
SMDJ130A
SMDJ130CA
SMDJ150
SMDJ150C
SMDJ150A
SMDJ150CA
SMDJ160
SMDJ160C
SMDJ160A
smd hee
smdj18ca
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C-030
Abstract: MMBFJ110
Text: MMBFJ110 N-Channel Switch SuperSOT-3 Features 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58. 2 Marking : 110 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* TA=25°C unless otherwise noted
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MMBFJ110
C-030
MMBFJ110
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MMBF5434
Abstract: marking 61z semiconductor body marking supersot-3
Text: MMBF5434 MMBF5434 N-Channel Switch • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 3 2 SuperSOT-3 1 Marking: 61Z 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted
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MMBF5434
MMBF5434
marking 61z
semiconductor body marking
supersot-3
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Untitled
Abstract: No abstract text available
Text: MMBFJ110 N-Channel Switch SuperSOT-3 Features 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from process 58. 2 Marking : 110 1 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* TA=25°C unless otherwise noted
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MMBFJ110
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J109
Abstract: No abstract text available
Text: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted
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2n4856
Abstract: 2n4856a
Text: 2N4856 2N4856A w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4856 and 2N4856A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C
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2N4856
2N4856A
2N4856)
2N4856A)
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J108
Abstract: MMBFJ108
Text: N-Channel Switch 3 • This device is designed for digital switching applications where very low on resistance is mandatory. • Sourced from Process 58. 2 1 TO-92 1. Drain 2. Source 3. Gate 1 SuperSOT-3 Marking: I8 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25°C unless otherwise noted
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2N4858
Abstract: 2N4858A marking IGF N-channel JFET
Text: 2N4858 2N4858A w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4858 and 2N4858A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C
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2N4858
2N4858A
2N4858
2N4858A
2N4858A)
2N4858)
marking IGF
N-channel JFET
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Untitled
Abstract: No abstract text available
Text: 2N4859 2N4859A w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4859 and 2N4859A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C
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2N4859
2N4859A
2N4859)
2N4859A)
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P–Channel 3 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG 40 Vdc Reverse Gate–Source Voltage VGSR 40 Vdc IGF 10 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W
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MMBF5460LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort JFET - General Purpose Transistor MMBF5460LT1 P−Channel 3 MAXIMUM RATINGS Rating Drain−Gate Voltage Reverse Gate−Source Voltage Forward Gate Current Symbol Value Unit VDG 40 Vdc VGSR 40 Vdc IGF 10 mAdc 1 2 CASE 318 −08, STYLE 10 SOT−23 TO −236AB
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MMBF5460LT1
236AB)
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Untitled
Abstract: No abstract text available
Text: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc
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MMBF5460LT1
MMBF5460LT1/D
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transistor m6e
Abstract: m6e marking code MARKING JW SOT-23 MMBF5460LT1G jw sot23 marking jw MMBF5460LT1 JW SOT-23 jw sot23-3
Text: MMBF5460LT1 JFET − General Purpose Transistor P−Channel http://onsemi.com Features • Pb−Free Package is Available 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain−Gate Voltage VDG 40 Vdc Reverse Gate−Source Voltage VGSR 40 Vdc IGF 10 mAdc
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MMBF5460LT1
OT-23
O-236)
MMBF5460LT1/D
transistor m6e
m6e marking code
MARKING JW SOT-23
MMBF5460LT1G
jw sot23
marking jw
MMBF5460LT1
JW SOT-23
jw sot23-3
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JT MARKING
Abstract: SC321 SC321-2 marking VM
Text: SC321 1.0A I J H B ' i i i : Outline Drawings m a m # 4 * r- v FAST RECOVERY DIODE I/Ü 'm r < SI ¿ZEH 04 135* ! !2 m ! ! : Features 12-“ ! 135ta* s-t-o? ! \%z7n : Marking S urface m ount device » is « » * H igh voltage by m esa d esign. • S fk 8 &
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SC321
SC321-2
f-150
JT MARKING
marking VM
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st Diode marking EE
Abstract: No abstract text available
Text: ERC81-004 2.6A Ifl-JUN'Sc : Outline Drawings SCHOTTKY BARRIER DIODE Features I^Tjv : Marking L ow V F * 7 - 3 - K rta S u p e r h ig h sp ee d s w itc h in g . Color code : S ilver • T V — t - S iB l-iS B ftS tt H ig h reliability by p la n e r d e s ig n .
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ERC81-004
ERC81
st Diode marking EE
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Untitled
Abstract: No abstract text available
Text: E*3d RADI ALL 5 0 n TERMINATED OPTIONS: R 5 7 4 413900 TECHNICAL DATA SHEET 18GHz SMA S.P.9T. N/O Page 1/ 2 SWITCH INDICATOR R F CHARACTERISTICS | NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE : 9 : 0- 18 GHz : 50 Ohms any modifications judged necessary Igf^al Microwave components
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18GHz
R574413900
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Untitled
Abstract: No abstract text available
Text: 50n TERMINATED R 5 7 4 403945 TECHNICAL DATA SHEET 18GHz SMA S.P.9T. N/O Page 1/ 2 SWITCH OPTIONS:/SUPP.DIODES R F CHARACTERISTICS | NUMBER OF WAYS FREQUENCY RANGE IMPEDANCE : 9 : 0- 18 GHz : 50 Ohms any modifications judged necessary WS d RADI ALL Igf^al Microwave components
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18GHz
R574403945
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scr 8a 200v
Abstract: No abstract text available
Text: fZ7 SG S -TH O M S O N ^7# raDeœnLisir^igffliKSi S08xxxH SCR FEATURES • I t rms = 8 A > V d r m = 200V to 800V ■ High surge current capability DESCRIPTION The S08xxxH series of SCRs uses a high performance MESA GLASS PNPN technology. These parts are intended for general purpose
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S08xxxH
S08xxxH
T0220
0D7G134
scr 8a 200v
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