MARKING HLEH Search Results

GaAs FET cfy 19

Abstract: S11 SIEMENS z0 607 MA 7a
Contextual Info: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20

siemens PG

Abstract: Siemens MMIC DECT siemens MMIC marking 81
Contextual Info: SIEMENS GaAs MMIC CGY 195 Tentative Data • • • • • RF_out / VD2 4 Power amplifier for DECT application, single voltage supply Operating voltage range: 2.7 to 6 V Pout = 26dBm at Vd=3.3V Overall power added efficiency 44 % 5 yo! ESD: Electrostatic discharge sensitive device,

Contextual Info: SIEMENS CG Y 52 GaAs MM IC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation *Chip fully passivated * Operating voltage range: 2.7 to 5 V *50 Q. input / output 3 ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS GaAsMMIC CG Y 121 B Target Datasheet * Variable gain amplifier MMIC-Amplifier for mobile communication RF_in; R F-G N D 4 * Gain Control range over 50dB * Positive Control Voltage * 50i2 input and output matched * Low power consumption * Operating voltage range: 2.7 to 6 V

MMIC "SOT 89" marking

Abstract: marking HLEH Siemens MMIC MMIC marking code GA
Contextual Info: SIEM EN S CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure

Contextual Info: SIEMENS GaAs MMIC CGY96 Preliminary Datasheet *Power amplifier for GSM class 4 phones *3.2 W 35dBm output power at 3.5 V *Overall power added efficiency 50 % *Fully integrated 3 stage amplifier *Single supply operation *Power ramp control *lnput matched to 50 ohms, simple output match

SIEMENS 230 92 O

Abstract: siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS
Contextual Info: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fmjn= 1.4 dB @ 4 G H z * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation

"Marking k2" mmic

Abstract: TLX-9-0150-CH
Contextual Info: SIEMENS Preliminary data * Low noise preamplifier for mobile communication PCN, DECT, GSM in 2.7V to 6V systems * Biased monolithic microwave 1C (MMIC) * Easily matchable to 50Q * No bias coil needed * Single positive supply voltage * Low noise figure and high gain