ST Microelectronics Transistors
Abstract: transistors marking HJ hj sot-23 Marking H2 marking .H2 BCW69 BCW70
Text: BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS • ■ ■ Type Marking BCW 69 H1 BCW 70 H2 SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AUDIO AMPLIFICATION AND SWITCHING 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM
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BCW69
BCW70
OT-23
ST Microelectronics Transistors
transistors marking HJ
hj sot-23
Marking H2
marking .H2
BCW69
BCW70
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marking 3G
Abstract: ICES BC856A-BC858C bc856b
Text: BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNALTRANSISTOR Features • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available BC846-BC848 For Switching and AF Amplifier Applications
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BC856A
BC858C
BC846-BC848)
OT-23
OT-23,
MIL-STD-202,
BC856B
BC857A
BC857B
marking 3G
ICES
BC856A-BC858C
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Untitled
Abstract: No abstract text available
Text: BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · · · Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available BC846-BC848 For Switching and AF Amplifier Applications
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BC856A
BC858C
BC846-BC848)
OT-23
OT-23,
MIL-STD-202,
BC856B
BC857A
BC857B
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Untitled
Abstract: No abstract text available
Text: BC846A - BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary PNP Types Available BC856-BC858 For Switching and AF Amplifier Applications
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BC846A
BC848C
BC856-BC858)
OT-23
OT-23,
MIL-STD-202,
BC846B
BC847A
BC847B
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750 ZHN
Abstract: SMAZ3V9 3.3v zener ZHW MARKING SMAZ10 SMAZ12 SMAZ15 SMAZ16 SMAZ18 SMAZ20
Text: SMAZ3V3 - SMAZ39 1.0W SURFACE MOUNT ZENER DIODE Features • · · · · · 1.0W Power Dissipation High Surge Capability Ideally Suited for Automatic Assembly 3.3V - 39V Nominal Zener Voltage Range Standard VZ Tolerance is ± 5% Plastic Material: UL Flammability
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SMAZ39
MIL-STD-202,
100mA
DS18015
750 ZHN
SMAZ3V9
3.3v zener
ZHW MARKING
SMAZ10
SMAZ12
SMAZ15
SMAZ16
SMAZ18
SMAZ20
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smd diode code H1
Abstract: diode marking H2 DO-35 land pattern smd diode H3 marking code H1 SMD marking code H2 SMD diode smd marking code H1 D10 SMD CODE MARKING marking CODE h1 SMD code H2
Text: BAV19W/BAV20W/BAV21W 410mW High Voltage SMD Switching Diode Small Signal Diode SOD-123F B Features C A These diodes are also available in DO-35, LL34 Package Surface device type mounting D Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BAV19W/BAV20W/BAV21W
410mW
OD-123F
DO-35,
MIL-STD-202,
C/10s
smd diode code H1
diode marking H2
DO-35 land pattern
smd diode H3
marking code H1 SMD
marking code H2 SMD
diode smd marking code H1
D10 SMD CODE MARKING
marking CODE h1
SMD code H2
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smd diode H3
Abstract: smd diode code H1
Text: BAV19W/BAV20W/BAV21W 410mW High Voltage SMD Switching Diode Small Signal Diode SOD-123F B Features C A These diodes are also available in DO-35, LL34 Package Surface device type mounting D Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BAV19W/BAV20W/BAV21W
410mW
OD-123F
DO-35,
MIL-STD-202,
C/10s
smd diode H3
smd diode code H1
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"antenna switch"
Abstract: gsm antenna GSM900 TQP4M4003 H3 diode SLIM-7 LTCC GHz SPDT HIGH POWER
Text: TQP4M4003 Preliminary data sheet Rev0.2 SPDT High Power 2.5V GSM Antenna Switch Features: • • • • • • • • • SLIM-7 Package Outline: SLIM-7 Packaged PHEMT GaAs MMIC Die Smallest Available GSM SPDT Switch 1.3 x 2.0 mm Footprint Thin Package: 0.4mm for LTCC Modules
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TQP4M4003
74dBc
35dBm
81dBc
77dBc
78dBc
-27dB
GSM850/900
2004TriQuint
"antenna switch"
gsm antenna
GSM900
TQP4M4003
H3 diode
SLIM-7
LTCC GHz
SPDT HIGH POWER
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sma smaj5.0 data
Abstract: No abstract text available
Text: SMAJ5.0 C A - SMAJ170(C)A 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features • · · · · · · 400W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability
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SMAJ170
MIL-STD-202,
DS19005
sma smaj5.0 data
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"antenna switch"
Abstract: gsm antenna GSM900 TQP4M4003 HIGH POWER ANTENNA SWITCH PIN DIODE SLIM-7 SPDT HIGH POWER
Text: TQP4M4003 Preliminary data sheet SPDT High Power 2.5V GSM Antenna Switch Features: • • • • • • • • • SLIM-7 Package Outline: SLIM-7 Packaged PHEMT GaAs MMIC Die Smallest Available GSM SPDT Switch 1.3 x 2.0 mm Footprint Thin Package: 0.4mm for LTCC Modules
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TQP4M4003
74dBc
35dBm
81dBc
77dBc
78dBc
-27dB
GSM850/900
"antenna switch"
gsm antenna
GSM900
TQP4M4003
HIGH POWER ANTENNA SWITCH PIN DIODE
SLIM-7
SPDT HIGH POWER
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Untitled
Abstract: No abstract text available
Text: SMAJ5.0 C A - SMAJ170(C)A 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features • · · · · · · 400W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability
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SMAJ170
MIL-STD-202,
DS19005
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HK 333 94v0
Abstract: SMAJ15CA sma smaj5.0 data
Text: SMAJ5.0 C A - SMAJ170(C)A 400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features • · · · · · · 400W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability
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SMAJ170
MIL-STD-202,
appro25°
DS19005
HK 333 94v0
SMAJ15CA
sma smaj5.0 data
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Untitled
Abstract: No abstract text available
Text: Metal Oxide Film Resistors Metal (Oxide) Film Resistors Type: ERG(X)S (Small size) (0.5 W, 1 W, 2 W, 3 W, 5 W) ERG(X)F (Anti-heat conducting for PCB) (1 W, 2 W, 3 W, 5 W) • Features ● Miniaturized 50 % smaller compared to existing models ● Non-flammable
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RC-2138
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H12F
Abstract: ERX2S
Text: Metal Oxide Film Resistors Metal (Oxide) Film Resistors Type: ERG(X)S (Small size) (0.5 W, 1 W, 2 W, 3 W, 5 W) ERG(X)F (Anti-heat conducting for PCB) (1 W, 2 W, 3 W, 5 W) • Features ● Miniaturized 50 % smaller compared to existing models ● Non-flammable
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RC-2138
H12F
ERX2S
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1aM x sot-23 transistor
Abstract: No abstract text available
Text: MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT3906 Ideal for Medium Power Amplification and Switching SOT-23 Dim A Min Max 0.37 0.51 B 1.19 1.40 C 2.10 2.50 D 0.89
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MMBT3904
MMBT3906)
OT-23
OT-23,
MIL-STD-202,
DS30036
1aM x sot-23 transistor
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YEW-2575
Abstract: No abstract text available
Text: POWER TYPE MOS MOSX EU RoHS 小形酸化金属皮膜固定抵抗器 Fixed Metal Oxide Film Resistors Small type 小形金属皮膜固定抵抗器 Fixed Metal Film Resistors (Small type) •構造図 Construction C ② ③ ④ ⑤ φd ① ⑥ L 外装色:ラベンダー Coating color: Lavender
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5CL35A
3CL20A
YEW-2575
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Untitled
Abstract: No abstract text available
Text: POWER TYPE MOS MOSX EU RoHS 小形酸化金属皮膜固定抵抗器 Fixed Metal Oxide Film Resistors Small type 小形金属皮膜固定抵抗器 Fixed Metal Film Resistors (Small type) •構造図 Construction C ② ③ ④ ⑤ φd ① ⑥ L 外装色:ラベンダー Coating color: Lavender
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5CL35A
3CL20A
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k6b transistor
Abstract: K6C SOT23 marKing k6C sot-23 marking k6B
Text: BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features • · · · · 310 mW Power Dissipation Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available BC807
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BC817-16
BC807)
OT-23
OT-23,
MIL-STD-202,
BC817-25
BC817-40
500mA,
300mA
k6b transistor
K6C SOT23
marKing k6C sot-23
marking k6B
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panasert
Abstract: No abstract text available
Text: Metal Oxide Film Resistors Metal (Oxide) Film Resistors Type: ERG(X)S (Small size) (0.5 W, 1 W, 2 W, 3 W, 5 W) ERG(X)F (Anti-heat conducting for PCB) (1 W, 2 W, 3 W, 5 W) • Features ● Miniaturized 50 % smaller compared to existing models ● Non-flammable
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RC-2138
panasert
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BC 9014
Abstract: ptc 915
Text: 2381 66. 5.4 Vishay BCcomponents 12 to 24V PTC Thermistors For Overload Protection FEATURES • Wide range of trip and non-trip currents: from 350 mA up to 3 A for the trip current • Wide range of resistance: from 0.16 Ω up to 3.5 Ω • Small ratio between trip and non-trip currents
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2002/95/EC
2002/96/EC
15-Jun-05
BC 9014
ptc 915
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ptc 2322 662
Abstract: BC 9014 PQ2000 2322 vishay IEC60286-2 2322 661
Text: 2322 66. 5.4 Vishay BCcomponents 12 to 24V PTC Thermistors For Overload Protection FEATURES • Wide range of trip and non-trip currents: from 350 mA up to 3 A for the trip current • Wide range of resistance: from 0.16 Ω up to 3.5 Ω • Small ratio between trip and non-trip currents
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03-Aug-04
ptc 2322 662
BC 9014
PQ2000
2322 vishay
IEC60286-2
2322 661
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Untitled
Abstract: No abstract text available
Text: r z 7 SGS-THOMSON ^ 7 # MeramiOTiBiiKiDe BCW69 BCW70 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW69 H1 BCW70 H2 . SILICON EPITAXIAL PLANAR PNP TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . LOW LEVEL AUDIO AMPLIFICATION AND
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BCW69
BCW70
OT-23
06B10
BCW69/BCW70
OT-23
0076D2b
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BCW70R
Abstract: general purpose complementary transistors 1a 50v BCW71 scw71 BCW69 BCW69R BCW70 BCW72 BFQ31 5P sot23
Text: FERRANTI semiconductors * BCW69 BCW70 PNP Silicon Planar Small Signal Transistors DESCRIPTION These devices are intended fo r lo w level, general purpose applications. Com plementary to th e BCW71 and BCW72. Encapsulated in th e popular SOT-23 package these devices
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BCW69
BCW70
BCW71
BCW72.
OT-23
BCW69
BCW70
FMMT5087
BCW70R
general purpose complementary transistors 1a 50v
scw71
BCW69R
BCW72
BFQ31
5P sot23
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Untitled
Abstract: No abstract text available
Text: BC856A - BC858C PNP SURFACE MOUNT SMALL SIGNALTRANSISTOR /L I T E M îl'j I P O W E R S E M IC O N D U C T O R / Features • • • • • Epitaxial Die Construction Ideally Suited for Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available
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BC856A
BC858C
BC846-BC848)
OT-23
OT-23,
MIL-STD-202,
DS11207
BC856A-BC858C
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