ga sot-89
Abstract: SOT89 marking GA diode 78a SOT89 marking GD MARKING GA SOT-89 marking GC diode baw 78b
Text: BAW 78A . BAW 78D Silicon Switching Diodes 1 • Switching applications 2 • High breakdown voltage 3 2 VPS05162 2 1 EHA07007 Type Marking Pin Configuration Package BAW 78A GA 1=A 2=C 3 = n.c. SOT-89 BAW 78B GB 1=A 2=C 3 = n.c. SOT-89 BAW 78C GC 1=A 2=C
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VPS05162
EHA07007
OT-89
EHB00094
EHB00095
EHB00096
EHB00097
ga sot-89
SOT89 marking GA
diode 78a
SOT89 marking GD
MARKING GA SOT-89
marking GC diode
baw 78b
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Untitled
Abstract: No abstract text available
Text: MA111 Schottky Barrier Diodes SBD MA733 Silicon epitaxial planer type Unit : mm For UHF mixer INDICATES CATHODE ● Large conversion gain GC and optimum for UHF mixer ● S-Mini package, enabling down-sizing of the equipment and auto- 1 2 1.7±0.1 0.4±0.15
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MA111
MA733
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schottky diode marking A7
Abstract: No abstract text available
Text: 2SK1606 Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planer type Unit : mm For UHF mixer 1.60±0.05 • Features (0.2) Small forward voltage VF ● Large conversion gain GC and optimum for UHF mixer ● SS-Mini package, enabling down-sizing of the equipment and auto-
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2SK1606
MA2S707
schottky diode marking A7
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M2X diode
Abstract: MA3X730 935 schottky diode Diodes MARKING 11 3PIN M2X marking
Text: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 1.45 + 0.1 3 Forward voltage (DC) VF 0.5 V Reverse voltage (DC) VR 5 V Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125
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MA3X730
O-236
SC-59
MA2X707s
M2X diode
MA3X730
935 schottky diode
Diodes MARKING 11 3PIN
M2X marking
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2X707 Silicon epitaxial planar type Unit : mm INDICATES CATHODE + 0.2 1.6 − 0.1 1 • Features • Small forward voltage VF • Optimum for UHF mixer because of its large conversion gain (GC) • Mini type package, allowing downsizing of equipment and
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MA2X707
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA2S707 Silicon epitaxial planar type Unit : mm For UHF mixer 1.60 ± 0.05 + 0.05 Forward voltage Junction temperature Storage temperature + 0.05 Rating 0.15 ± 0.05 2 Unit ea s ht e v tp is :// it pa fo na llo so win ni g c. U
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MA2S707
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X730 Silicon epitaxial planar type Unit : mm For UHF mixer + 0.2 2.8 − 0.3 + 0.25 0.65 ± 0.15 1 Reverse voltage (DC) Junction temperature Storage temperature 0.95 + 0.1 0.16 − 0.06 + 0.1 0.1 to 0.3 0.4 ± 0.2 Unit 0 to 0.1
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MA3X730
MA2X707s
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diode SR 34
Abstract: No abstract text available
Text: Sample & Buy Product Folder Support & Community Tools & Software Technical Documents UCD7138 SLVSCS1B – MARCH 2015 – REVISED MAY 2015 UCD7138 4-A and 6-A Single-Channel Synchronous-Rectifier Driver With Body-Diode Conduction Sensing and Reporting 1 Features
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UCD7138
UCD7138
UCD3138A
diode SR 34
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diode MARKING CODE GC
Abstract: 2SC2012 fast recovery diode 600v 5A GC marking code diode marking code GC diode SC201 SC201-2 SC201-4 SC201-6 diode marking Gc
Text: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications
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SC201
SC201-2
SC201-4
SC201-6
SC201
diode MARKING CODE GC
2SC2012
fast recovery diode 600v 5A
GC marking code diode
marking code GC diode
SC201-2
SC201-4
SC201-6
diode marking Gc
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dALLAS MARKING CODE
Abstract: fast recovery diode 600v 5A SC201 SC201-2 SC201-4 SC201-6 diode MARKING CODE GC
Text: SC201 0.5A ( 200V to 600V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability GA Applications
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SC201
SC201-2
SC201-4
SC201-6
SC201
dALLAS MARKING CODE
fast recovery diode 600v 5A
SC201-2
SC201-4
SC201-6
diode MARKING CODE GC
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2SC2012
Abstract: No abstract text available
Text: SC201 0.5A ( 200V to 800V / 0.5A ) Outline drawings, mm FAST RECOVERY DIODE 3±0.2 0.1 2.6±0.2 2.5±0.2 Marking 1.35±0.4 2 MIN. 1.35±0.4 1.2±0.2 +0.4 5.1-0.1 Features Surface mount device High voltage by mesa design Marking High reliability Code GA Applications
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SC201
SC201-2
SC201-4
SC201-6
SC201-8
SC201
15x15mm
2SC2012
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035H
Abstract: IRFPE30
Text: PD - 95327 IRG4PC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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IRG4PC30UDPbF
O-247AC
IRFPE30
035H
IRFPE30
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast
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IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
induction cooking
ge 6220
induction cooking circuits
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Untitled
Abstract: No abstract text available
Text: Transistors Diodes IC SMD Type Product specification 2SC2734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 UHF frequency converter +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base
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2SC2734
OT-23
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Untitled
Abstract: No abstract text available
Text: PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter
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PD-94810A
IRG4BC30UDPbF
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD -94917A IRG4IBC20UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • 2.5kV, 60s insulation voltage
• 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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-94917A
IRG4IBC20UDPbF
O-220
O-220AB
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ST T4 3660
Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in
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6781A
IRG4PH40UD2-E
200kHz
O-247AD
ST T4 3660
035H
IRFPE30
IRG4PH40UD2-E
TO247AD package
marking GC diode
induction cooking circuits
induction cooking
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IRGP4660
Abstract: IRGP4660D-EPBF
Text: IRGP4660DPbF IRGP4660D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 60A, TC = 100°C C C tSC 5 s, TJ max = 175°C G VCE(on) typ. = 1.60V @ IC = 48A E n-channel Applications • Industrial Motor Drive
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IRGP4660DPbF
IRGP4660D-EPbF
O-247AC
IRGP4660DPbF
O-247AD
IRGP4660D-EP
IRGP4660DPbF/IRGP4660D-EPbF
JESD22-A114)
IRGP4660
IRGP4660D-EPBF
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diode 10dl
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GC10DLH THRU GC10MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 2010 Halogen-free type Lead free product, compliance to RoHS GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage
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GC10DLH
GC10MLH
DO-214AC
000V/1
300uS
diode 10dl
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Untitled
Abstract: No abstract text available
Text: PD -94917 IRG4IBC20UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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IRG4IBC20UDPbF
O-220
O-22F
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Untitled
Abstract: No abstract text available
Text: ZOWIE Low VF Rectifier Diode GC20DLH THRU GC20MLH Low VF Rectifier Diode OUTLINE DIMENSIONS FEATURES Case : 2010 Halogen-free type Lead free product, compliance to RoHS GPRC Glass passivated rectifier chip inside Glass passivated cavity-free junction Lead less chip form, no lead damage
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GC20DLH
GC20MLH
DO-214AC
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Untitled
Abstract: No abstract text available
Text: ZOWIE Rectifier Diode 200V~1000V / 1.0A GC10DH THRU GC10MH FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS GPRC (Glass passivated rectifier chip) inside Glass passivated cavity-free junction Lead less chip form, no lead damage
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GC10DH
GC10MH
DO-214AC
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Untitled
Abstract: No abstract text available
Text: Panasonic Schottk y Barrier Diodes SBD MA2S707 Silicon epitaxial planer type U n it : m m For UHF mixer I Features ( 0 -2 ) Small forward voltage Vp Large conversion gain GC and optimum for UHF mixer SS-Mini package, enabling down-sizing of the equipment and auto
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OCR Scan
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MA2S707
890MHz,
935MHz,
45MHz
935MHz
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diode marking GA
Abstract: marking GC diode 2SC2012 SC201 SC201-2 SC201-4 SC201-6
Text: SC201 0.5A • Outline Drawing f a s t r e c o v e r y DIODE I Features Marking • Surface mount device • High voltage by mesa design • High reliability -CATHODE MARKING ■SYMBOL I - Æ GA I Applications ■MONTH • High speed switching 14 - »
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OCR Scan
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SC201
SC201-2
SC201-4
SC201-6
0003b4Ã
diode marking GA
marking GC diode
2SC2012
SC201
SC201-6
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