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    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SL POWER ELECTRONICS CORP. 6050 King Drive, Bldg. A Ventura, CA 93003 + 805-486-4565 Internet: www.slpower.com G2T60 SERIES INSTALLATION INSTRUCTIONS MODEL NUMBERS: G2T60-X-YYYG, where X = 12, 15, 18, 24 or 48 which represents the output voltage rating –YYY is value added options not related to Safety and G represents RoHS Compliance.


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    G2T60 G2T60-X-YYYG, G2T60-12 G2T60-15 G2T60-18 G2T60-24 G2T60-48 PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


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    R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


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    P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 PDF

    SW SPDT 6pin

    Abstract: UPG168TB-E4 VP215 HS350 UPG168TB
    Text: NEC's ½W UPG168TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG168TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L,


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    UPG168TB UPG168TB HS350 SW SPDT 6pin UPG168TB-E4 VP215 HS350 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC's ½W UPG168TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 2.5 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG168TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phone and L,


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    UPG168TB HS350 PDF

    Untitled

    Abstract: No abstract text available
    Text: SODF151T-SH thru SODF157T-SH Surface Mount Glass Passivated Junction Fast Recovery Rectifiers Reverse Voltage 50 to 1000V Forward Current 1.5A FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * High temperature metallurgically


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    ODF151T-SH ODF157T-SH MIL-S-19500 OD123-FL/MINI MIL-STD-750, de750D METHOD-1036 15PSIG JESD22-A102 MIL-STD-750D PDF

    SW SPDT 6pin

    Abstract: HS350 UPG168TB UPG168TB-E4 VP215 MARKING G2t
    Text: DATA SHEET NEC's L, S-BAND SPDT SWITCH FEATURES DESCRIPTION NEC's UPG168TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. • SWITCH CONTROL VOLTAGE: Vcont (H) = 2.5 to 5.3 V (3.0 V TYP.)


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    UPG168TB UPG168TB HS350 SW SPDT 6pin HS350 UPG168TB-E4 VP215 MARKING G2t PDF

    HS350

    Abstract: VP215
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG168TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG168TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.


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    PG168TB PG168TB 90NEC HS350 VP215 PDF

    SW SPDT 6pin

    Abstract: HS350 VP215
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG168TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG168TB is GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which were developed for mobile phone and another L, S-band application. This device can operate frequency from 0.5 to 2.5 GHz, having the low insertion loss and high isolation.


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    PG168TB PG168TB SW SPDT 6pin HS350 VP215 PDF

    Untitled

    Abstract: No abstract text available
    Text: UCC2541 ą SLUS621A − AUGUST 2004 − SEPTEMBER 2005 HIGHĆEFFICIENCY SYNCHRONOUS BUCK PWM CONTROLLER APPLICATIONS D High Efficiency Non-Isolated Converters FEATURES D On-Chip Predictive Gate Drivet for D D D D D D D D D D High-Efficiency Synchronous Buck


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    UCC2541 SLUS621A 20-Pin QFN-32 UCC2541 PDF

    Untitled

    Abstract: No abstract text available
    Text: UCC2540 ą SLUS539C − JUNE 2004 − REVISED OCTOBER 2008 HIGHĆEFFICIENCY SECONDARYĆSIDE SYNCHRONOUS BUCK PWM CONTROLLER FEATURES D On-Chip Predictive Gate Drivet for D D D D D D D D D D APPLICATIONS D Secondary-Side Post Regulation SSPR for High-Efficiency Synchronous Buck


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    UCC2540 SLUS539C 70-ns PDF

    SW SPDT 6pin

    Abstract: HS350 VP215
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: UCC2540 ą SLUS539C − JUNE 2004 − REVISED OCTOBER 2008 HIGHĆEFFICIENCY SECONDARYĆSIDE SYNCHRONOUS BUCK PWM CONTROLLER FEATURES D On-Chip Predictive Gate Drivet for D D D D D D D D D D APPLICATIONS D Secondary-Side Post Regulation SSPR for High-Efficiency Synchronous Buck


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    UCC2540 SLUS539C 70-ns PDF

    29f040b

    Abstract: teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6
    Text: White Electronic Designs Table Of Contents Product Overview . 2 Commitment . 3


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    DMD2006F 29f040b teradyne catalyst Stacked 4MB Flash and 1MB SRAM WED3C755E8MC FLF14 kyocera 128 cqfp CERAMIC QUAD FLATPACK CQFP 95613 hac 132 BAG PACKAGE TOP MARK tms320c6 PDF

    telemecanique catalogue 1995

    Abstract: GUE7082W GU6412 GUE7062W GU3050 GU3420DWSSMP
    Text: Schneider Electric wiring devices, lighting & air movement LifeSpace product catalogue Electrical solutions Smart home An innovative range of affordable home automation systems. From Sphere programmable lighting control system, LexCom Performance networking


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    SE7257 telemecanique catalogue 1995 GUE7082W GU6412 GUE7062W GU3050 GU3420DWSSMP PDF

    dfb activation energy

    Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
    Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a


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    ODE-408-001I HL1570AF HL1569AF dfb activation energy "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G PDF

    LWD30-0512

    Abstract: 2KVAC LWD15-0524 LWD15-0512 LWD15-1212 LWD50 15W-50W aw1202 15w50
    Text: LAMBDAA SERIES DENSEI-LAMBDA Dual output 1 5 W - 5 0 W • M odel nam e LWD 50-1212 [ Name of series Output voltage 1212 :1 2V, 12V | Ex. of display 0512:5V, 12V Output power : 15W, 30W, 50W 0524 : ■ F e a tu re s marking {Low Voltage Directive): E. L. V output


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    5W-50W 265VAC 265VAC LWD50 LWD15 LWD30 LWD30-0512 2KVAC LWD15-0524 LWD15-0512 LWD15-1212 LWD50 15W-50W aw1202 15w50 PDF

    Untitled

    Abstract: No abstract text available
    Text: WB1 HEW LETT mLnM P A C K A R D 1 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-50311 Features • Internally Biased, Single 5 V Supply 17 mA • 19 dB Gain • 3.6 dB NF • Unconditionally Stable SOT-143 Surface Mount Package Description Pin Connections and


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    INA-50311 OT-143 INA-50311 self-aligb30 INA-30/50 INA-50311-TRI PDF

    97582

    Abstract: 54F138 CQCC1-N20 GDFP2-F16 GDIP1-T16 qml38535
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-OA Add vendor cage 27014 for device 01. Technical changes in 1.3. - tdn APPROVED Raymond Monnin 97-07-18 REV SHEET REV SHEET REV STATUS OF SHEETS PMIC N/A REV A A A A A A A A A A A A SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PREPAREDBY


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    PDF

    L415

    Abstract: 30V 10.5A p-channel MOSFET 25i5 diode sv 03
    Text: P D - 9 .1 6 4 0 B International IS R Rectifier IRL6903S/L HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL6903S • Low-profile through-hole (IRL6903L) • 175°C Operating Temperature • Fast Switching


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    1640B IRL6903S/L IRL6903S) IRL6903L) L415 30V 10.5A p-channel MOSFET 25i5 diode sv 03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Data Sheet December 1996 microelectronics group Lucent Technologies Bell Labs Innovations FW300-Series Power Modules: 36 Vdc to 75 Vdc Input; 300 W Features • Size: 61.0 mm 2.4 in. x 116.8 mm (4.6 in.) x 13.5 mm (0.5 in.) ■ Operating case temperature range:


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    FW300-Series DS96-025EPS DS94-061EPS) D05D02b PDF

    4218160

    Abstract: NEC 4218160 nec A2C UPD42S18160
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /JPD42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /tPD42S18160, 4218160 are 1,048,576 words by 16 bits CMOS dynamic RAMs. The fast page mode and byte read/write mode capability realize high speed access and low power consumption.


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    uPD42S18160 16-BIT, /tPD42S18160, /xPD42S18160 50-pin 42-pin iPD42S18160-60, iPD42S18160-70, VP15-207-2 M27S25 4218160 NEC 4218160 nec A2C PDF

    st6203b

    Abstract: JRC 072 D ST62T03 programmer ST6 CPU programming manual 311 JRC ST62T03B6/HWD ST62E01 ST62T03 ST62XX jrc 072
    Text: ^ 7 S G S -T H O M S O N ST62T03 RÆDÊ[SÎ Q IlUi(gîM)K!]D(§§ 8-BIT OTP MCUs PRODUCT PREVIEW • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 3.0 to 6.0V Supply Operating Range 8 MHz Maximum Clock Frequency -40 to +85°C Operating Temperature Range


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    st62T03 D777SS st6203b JRC 072 D ST62T03 programmer ST6 CPU programming manual 311 JRC ST62T03B6/HWD ST62E01 ST62T03 ST62XX jrc 072 PDF