SIDAC
Abstract: k1v diode tyristor
Text: Ref. No. 84-116e November 8, 2006 Messrs. Change Notice of the Ink Color and the Type Name Indication for the Marking of SIDAC/TSS Dear Valued Customer, We hereby inform you of the change of the ink color and the type name indication for the marking of SIDAC/TSS. Please see below for the details:
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84-116e
SIDAC
k1v diode
tyristor
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AX06
Abstract: No abstract text available
Text: Package : AX06 ０ ５ φ０６ . ±０． ●捺印面展開図 Marking A方向 GV4 69 ２ ７５ . ±２ ０５ . ５＋ −０１ . ２ ７５ . ±２ ０． ２ φ２６ . ＋ −０． １ K方向 品名略号 Type No. [Unit : mm] G1V（A）14C：GV4
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GK MARK
Abstract: AX078
Text: Package : AX078 .５ φ０７ . ８±００ ●捺印面展開図 Marking ２ ７５ . ±２ ０５ . ５＋ −０.1 ２ ７５ . ±２ A方向 GK 69 ０２ . φ４.0＋ −０１ . K方向 品名略号 Type No. [Unit : mm] G1V（B）20C：GK アノードマーク
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AX078
GK MARK
AX078
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AX078
Abstract: No abstract text available
Text: Package : AX078 .５ φ０７ . ８±００ ●捺印面展開図 Marking A方向 GN 69 ２ ７５ . ±２ ０５ . ５＋ −０.1 ２ ７５ . ±２ ０２ . φ４０ . ＋ −０１ . K方向 品名略号 Type No. [Unit : mm] G1V（B）24C：GN アノードマーク
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AX078
AX078
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GL22C
Abstract: AX078
Text: Package : AX078 .５ φ０７ . ８±００ ●捺印面展開図 Marking ２ ７５ . ±２ ０５ . ５＋ −０.1 ２ ７５ . ±２ A方向 GL 69 ０２ . φ４.0＋ −０１ . K方向 品名略号 Type No. [Unit : mm] G1V（B）22C：GL アノードマーク
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AX078
GL22C
AX078
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nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
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NE68018
NE680
UPA801TC
UPA808TC
UPA821TC
UPA826TC
UPA861TD
UPA831TC
UPA862TD
UPA835TC
nec b1007
T79 code marking
C3206
marking s16
marking code C1H
qfn marking t88
C3H marking
NE02107
T79 marking
C3206G
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FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
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R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
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nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
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marking code C1E SMD Transistor
Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17
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P14740EE5V0PF00
marking code C1E SMD Transistor
TRANSISTOR SMD MARKING CODE s01
FMCW Radar
transistor smd c1y
NE92039
g2b 6-pin smd
NE582M03
NE3210SO1
smd transistor g1-L
smd code marking NEC 817
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g1va8c
Abstract: No abstract text available
Text: SIDAC G1V A 8C Absolute Maximum Ratings M 4k U& M M Storage Temperature Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage Repetitive Peak On-state Current Critical Rate of Rise of On-state Current ÜÄSlJ • T s tg - 4 0 ~ 125 °C Tj 125 °c
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g1va10c
Abstract: A10C
Text: SIDAC G1V A 10C Absolute Maximum Ratings M Item 4k pÜt!" i M fé f t Jp-fô Ratings U nit U&MM Storage Temperature T stg -4 0 ~ 125 °C Operating Junction Temperature ^ "7^J± Tj 125 °c Maximum Off-state Voltage V drm (A) 90 V 1 A 80 A 80 A /(is It RMS On-state Current
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--60H
g1va10c
A10C
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AX078
Abstract: G1VB22C GL SIDAC
Text: SIDAC -G1V®22C T /= 25°C / U nless otherw ise specified Absolute Maximum Ratings SB-t a m Item fSfffiK Operating Junction Temperature 7 M S : Maximum Off-state Voltage M i j i t ><!# / ^ y U 8£_h#^ Critical Rate of Rise of On-state Current S s iW •
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T/-102Â
Z314-5
AX078
G1VB22C
GL SIDAC
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g1vB8c
Abstract: No abstract text available
Text: SIDAC G1V B 8C Absolute Maximum Ratings M Item i U&M M Storage Temperature Operating Junction Temperature ^ "7 ^ J ± Maximum Off-state Voltage Repetitive Peak On-state Current Critical Rate of Rise of On-state Current Ü Ä ß l) • tftS Ilfê tï S ^ ~7
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G1VL22C
Abstract: 0z marking
Text: S I D A C . : G1VL22C Absolute Maximum Ratings Jp-fô T stg -40 ~ 125 °C Tj 125 °c V drm A 190 V 1 280 150 150 A 4k Storage Temperature Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage It RMS On-state Current Critical Rate of Rise of On-state Current
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G1VL22C
10/zs,
G1VL22C
0z marking
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Untitled
Abstract: No abstract text available
Text: S I D A C . : G1VL10C Absolute M axim um Ratings pÛ77 Item 4k U tfM M Storage Temperature Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage /•'JV.X if Repetitive Peak On-state Current Ü Ä ß l • t ftS Ilf ê tï T stg - 4 0 ~ 125
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G1VL10C
10//s,
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Untitled
Abstract: No abstract text available
Text: S I D A C . : G1VL8C A bsolute M axim um Ratings M Item i U tfM M Storage Temperature ilc'a'B$ Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage j^y\/7s i t Critical Rate of Rise of On-state Current Ü Ä ß l • t f tS I lfê t ï - 4 0 ~ 125
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10//s,
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g1vB23c
Abstract: No abstract text available
Text: S ID A C -G1V®23C T /= 25°C / Unless otherwise specified Absolute Maximum Ratings m Item SB-t a fSfffiK S to ra g e Tem perature O pe ra ting Ju n ctio n Tem perature ^ 7MS: M a xim u m O ff-sta te Voltage Mi j i t ><!# ^ yWiffii y U8£_h#^ C ritica l Rate o f Rise o f O n -sta te C urrent
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AX078
Z314-5
g1vB23c
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E2752
Abstract: g1vb20c
Text: i,g G1V B 20C/G1V(B)22C Absolute Maximum Ratings M pÛ77 i Item U tfM M Storage Temperature ilc'a'B$ Operating Junction Temperature ^ "7^J± Maximum Off-state Voltage it Repetitive Peak On-state Current Critical Rate of Rise of On-state Current Ü Ä ß l) • tftS Ilfê tï
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20C/G1V
E2752
g1vb20c
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SIDAC
Abstract: AX06 g1va12c
Text: SIDAC. G1V A 12C Absolute Maximum Ratings m Item a fSfffiK »•S-SWK O pera tin g Ju n ctio n Tem perature ^ 7MS: M axim um O ff-sta te Voltage Mi j i t ><!# ^ yWiffii y U8£_h#^ C ritical Rate o f Rise o f O n -sta te C urrent Item 7 — — a °C Tj 125
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25CBintess
Z314-5
SIDAC
AX06
g1va12c
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g1va20c
Abstract: AX06 TO10
Text: S ID A C -G1V A 20C A b solu te M axim um Ratings m Item SB-t a & fSfffiK »• S-S W K O pe ra ting Ju n ctio n Tem perature ^ 7MS: M a xim u m O ff-sta te Voltage M ijit ><!# ^ yWiffii Unit T stg -4 0 ~ 125 °C Tj 125 °c V d r m (A) 170 V 1 A 80 A 80
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25CBintess
Z314-5
g1va20c
AX06
TO10
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g1vB23c
Abstract: g1vB24c marking G1V ptl7
Text: i,g G1V B 23C/G1V(B)24C A b s o lu te M a x im u m R a tin g s M Item i U&MM Storage Temperature Operating Junction Temperature ^ "7^J± Critical Rate of Rise of On-state Current >r 7 W & Off-state Current 7 1 ^ “ ? t — 7 ’ —HEijfL 150 °c I tem 200
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23C/G1V
10/zs,
g1vB23c
g1vB24c
marking G1V
ptl7
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G1VL22C
Abstract: sidac V-I characteristics of SIDAC
Text: SIDACI Absolute Maximum Ratings m Item a Operating Junction Temperature 7M S : Maximum Off-state Voltage ><!# ^ yWiffii Ratings 190 V 1 A T/=98°C , 50H z sine w a v e 8 =180° A 150 tS] a 280 f= 5Hz Ta=25°C , p u lse w id th to= 10/(s, sine w av e 150
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G1VL22C
G1VL22C
Z314-5
sidac
V-I characteristics of SIDAC
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V-I characteristics of SIDAC
Abstract: G1VL10C
Text: SIDACI T /= 25°C / Unless otherwise specified A b solu te M axim um Ratings SB-t a m Item fSfffiK S to ra g e Tem perature »•S-SWK O pe ra ting Ju n ctio n Tem perature ^ 7MS: M a xim u m O ff-sta te Voltage Mi j i t > < !# ^ yWiffii y USE-h#^ C ritica l Rate o f Rise o f O n -sta te C urrent
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G1VL10C
T/-98Â
25CBintess
G1VL10C
Z314-5
V-I characteristics of SIDAC
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marking code g2s
Abstract: No abstract text available
Text: SIEMENS < *,0 0 5 S Silicon N-Channel MOSFET Tetrode •For low-noise, high gain-controlled input stages up to 1GH; ■Operating voltage 5V 1Integrated stabilized bias network X AGC o HF oIn p u t JX-Ih D ra in G2 I HF O u tp u t + DC G1 1 — r GND ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BF1005S
Q62702-F1665
OT-143
1005S
800MHz
BF1005S
marking code g2s
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